Growth mechanism of phases by interdiffusion and atomic mechanism of diffusion in the molybdenum-silicon system
Data(s) |
01/08/2011
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Resumo |
Tracer diffusion coefficients are calculated in different phases in the Mo-Si system from diffusion couple experiments using the data available on thermodynamic parameters. Following, possible atomic diffusion mechanism of the species is discussed based on the crystal structure. Unusual diffusion behaviour is found in the Mo(5)Si(3) and Mo(3)Si phases, which indicate the nature of defects present on different sublattices. Further the growth mechanism of the phases is discussed and morphological evolution during interdiffusion is explained. (C) 2011 Elsevier Ltd. All rights reserved. |
Formato |
application/pdf |
Identificador |
http://eprints.iisc.ernet.in/39186/1/Growth_mechanism.pdf Prasad, S and Paul, A (2011) Growth mechanism of phases by interdiffusion and atomic mechanism of diffusion in the molybdenum-silicon system. In: Intermetallics, 19 (8). pp. 1191-1200. |
Publicador |
Elsevier Science |
Relação |
http://dx.doi.org/10.1016/j.intermet.2011.03.027 http://eprints.iisc.ernet.in/39186/ |
Palavras-Chave | #Materials Engineering (formerly Metallurgy) |
Tipo |
Journal Article PeerReviewed |