Growth mechanism of phases by interdiffusion and atomic mechanism of diffusion in the molybdenum-silicon system


Autoria(s): Prasad, S; Paul, A
Data(s)

01/08/2011

Resumo

Tracer diffusion coefficients are calculated in different phases in the Mo-Si system from diffusion couple experiments using the data available on thermodynamic parameters. Following, possible atomic diffusion mechanism of the species is discussed based on the crystal structure. Unusual diffusion behaviour is found in the Mo(5)Si(3) and Mo(3)Si phases, which indicate the nature of defects present on different sublattices. Further the growth mechanism of the phases is discussed and morphological evolution during interdiffusion is explained. (C) 2011 Elsevier Ltd. All rights reserved.

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/39186/1/Growth_mechanism.pdf

Prasad, S and Paul, A (2011) Growth mechanism of phases by interdiffusion and atomic mechanism of diffusion in the molybdenum-silicon system. In: Intermetallics, 19 (8). pp. 1191-1200.

Publicador

Elsevier Science

Relação

http://dx.doi.org/10.1016/j.intermet.2011.03.027

http://eprints.iisc.ernet.in/39186/

Palavras-Chave #Materials Engineering (formerly Metallurgy)
Tipo

Journal Article

PeerReviewed