Observation of three-photon absorption and saturation of two-photon absorption in amorphous nanolayered Se/As2S3 thin film structures

We have studied the nonlinear optical properties of nanolayered Se/As2S3 film with a modulation period of 10 nm and a total thickness of 1.15 mu m at two [1064 nm (8 ns) and 800 nm (20 ps)] wavelengths using the standard Z-scan technique. Three-photon absorption was observed at off-resonant excitation and saturation of two-photon absorption at quasiresonant excitation. The observation of the saturation of two-photon absorption is because the pulse duration is shorter than the thermalization time of the photocreated carriers in their bands and three-photon absorption is due to high excitation irradiance. (c) 2007 American Institute of Physics.

Terahertz Spectroscopy of Single-Walled Carbon Nanotubes in a Polymer Film: Observation of Low-Frequency Phonons

We investigate the dielectric response of single-walled carbon nanotubes dispersed in poly(vinyl alcohol) matrix by using terahertz time domain spectroscopy. Frequency-dependent real and imaginary parts of the complex dielectric function are measured experimentally in the terahertz regime. The low-frequency phonons of carbon nanotubes, though predicted theoretically, are directly observed for the first time at frequencies 0.26, 0.60, and 0.85 THz. Further, a broad resonance is observed at 1.15 THz associated with the longitudinal acoustic mode of vibration of straight-chain segments of the long polymeric molecules in the film. The latter is observed at 1.24 THz for a pristine polymer film and has been used to derive the size of crystalline lamellae in the film.

Electrical and Optical Properties of Diketopyrrolopyrrole-Based Copolymer Interfaces in Thin Film Devices

Two donor acceptor diketopyrrolopyrrole (DPP)-based copolymers (PDPP-BBT and TDPP-BBT) have been synthesized for their application in organic devices such as metal-insulator semiconductor (MIS) diodes and field-effect transistors (FETs). The semiconductor-dielectric interface was characterized by capacitance-voltage and conductance-voltage methods. These measurements yield an interface trap density of 4.2 x 10(12) eV(-1) cm(-2) in TDPP-BBT and 3.5 x 10(12) eV(-1) cm(-2) in PDPP-BBT at the flat-band voltage. The FETs based on these spincoated DPP copolymers display p-channel behavior with hole mobilities of the order 10(-3) cm(2)/(V s). Light scattering studies from PDPP-BBT FETs show almost no change in the Raman spectrum after the devices are allowed to operate at a gate voltage, indicating that the FETs suffer minimal damage due to the metal-polymer contact or the application of an electric field. As a comparison Raman intensity profile from the channel-Au contact layer in pentacene FETs are presented, which show a distinct change before and after biasing.

Nanostructure of giant magnetoresistive oxide film Nd2/3Sr1/3MnO3 by scanning tunneling microscopy

Scanning tunneling microscopy was used to study the surface nanostructure of the epitaxial film Nd2/3Sr1/3MnO3 that shows giant magnetoresistance. The surface morphology of the film consists of a number of overlapping platelets of about 30–35 Å diameter that grow at an angle of 35°–45° to the surface normal. The peak to peak height of the platelets are multiples of the c‐axis lattice parameter of 7.85 Å showing that the growth of the platelets takes place by the layer by layer addition of one formula unit. The mean surface roughness is about 10 Å. In the range of a few microns the film exhibits no defects or dislocations. The film is unstable in ambient atmosphere and tends to get covered by an adsorbate layer. Tip‐surface interactions cause the adsorbate to be dislodged exposing the surface nanostructure. The degradation of the film in real time when imaged in air was recorded. The adsorbates increase the surface roughness of the film.

Transport properties and colossal magnetoresistance in epitaxial La0.67Cd0.33MnO3 thin film

An optimal composition of La0.67Cd0.33MnO3 was synthesized by ceramic route. The compound crystallized in a rhombohedral structure with lattice parameters a = 5.473(4) Å and α = 60°37′. Resistivity measurement showed an insulator-to-metal transition coupled with a ferromagnetic transition of around 255 K. Epitaxial thin films were fabricated on the LaAlO3 (100) substrate by a pulsed laser deposition technique. The psuedocubic lattice parameter a of the film is 3.873(4) Å. The insulator-to-metal transition of the film was observed at 250 K which is comparable with the bulk value. The film was ferromagnetic below this temperature. Magnetoresistance defined as ΔR/R0 = (RH−R0)/R0 was over −86% near the insulator-to-metal transition temperature of 240 K at 6 T magnetic field and over-30% at relatively low fields of 1 T. No magnetoresistance was observed at low temperatures in the film unlike in the polycrystalline sample, where about a 40% decrease in resistance was observed on applying 6 T magnetic field due to the spin dependent scattering at the grain boundaries.

Colossal magnetoresistance in epitaxial La(1-x-y)NayMnO3 thin film

We have synthesized La0.83Na0.11MnO2.93 by heating La2O3 and MnCO3 in NaCl melt at 900 °C. The exact composition was arrived by analyzing each ion by an independent chemical method. The compound crystallized in a rhombohedral structure and showed an insulator-to-metal transition at 290 K. Epitaxial thin films were fabricated on LaAlO3 (100) using a pulsed laser deposition technique. The film also showed an insulator-to-metal transition at 290 K. Magnetoresistance [ΔR/R0 = (RH−R0)/R0] was −71% near the insulator-to-metal transition temperature of 290 K at 6 T magnetic field.

Evolution of 1/f α noise during electromigration stressing of metal film: Spectral signature of electromigration process

In this paper we report a systematic study of low-frequency 1/fα resistance fluctuation in a metal film at different stages of electromigration. The resistance fluctuation (noise) measurement was carried out in presence of a dc electromigration stressing current. We observe that in addition to the increase in the spectral power SV(f), the frequency dependence of the spectral power changes as the electromigration process progresses and the exponent α starts to change from 1 to higher value closer to 1.5. We interpret this change in α as arising due to an additional contribution to the spectral power with a 1/f3/2 component, which starts to contribute as the electromigration process progresses. This additional component SV(f) ∼ 1/f3/2 has been suggested to originate from long range diffusion that would accompany any electromigration process. The experimental observation finds support in a model simulation, where we also find that the enhancement of noise during electromigration stressing is accompanied by a change in spectral power frequency dependence.

Low threshold voltage ZnO thin film transistor with a Zn0.7Mg0.3O gate dielectric for transparent electronics

A highly transparent all ZnO thin film transistor (ZnO-TFT) with a transmittance of above 80% in the visible part of the spectrum, was fabricated by direct current magnetron sputtering, with a bottom gate configuration. The ZnO-TFT with undoped ZnO channel layers deposited on 300 nm Zn0.7Mg0.3O gate dielectric layers attains an on/off ratio of 104 and mobility of 20 cm2/V s. The capacitance-voltage (C−V) characteristics of the ZnO-TFT exhibited a transition from depletion to accumulation with a small hysteresis indicating the presence of oxide traps. The trap density was also computed from the Levinson’s plot. The use of Zn0.7Mg0.3O as a dielectric layer adds additional dimension to its applications. The room temperature processing of the device depicts the possibility of the use of flexible substrates such as polymer substrates. The results provide the realization of transparent electronics for next-generation optoelectronics.

Layer-by-Layer Assembled Thin Film of Albumin Nanoparticles for Delivery of Doxorubicin

Protein nanoparticles (NPs) have found significant applications in drug delivery due to their inherent biocompatibility, which is attributed to their natural origin. In this study, bovine serum abumin (BSA) nanoparticles were introduced in multilayer thin film via layer-by-layer self-assembly for localized delivery of the anticancer drug Doxorubicin (Dox). BSA nanoparticles (similar to 100 nm) show a high negative zeta potential in aqueous medium (-55 mV) and form a stable dispersion in water without agglomeration for a long period. Hence, BSA NPs can be assembled on a substrate via layer-by-layer approach using a positively charged polyelectrolyte (chitosan in acidic medium). The protein nature of these BSA nanoparticles ensures the biocompatibility of the film, whereas the availability of functional groups on this protein allows one to tune the property of the self-assembly to have a pH-dependent drug release profile. The growth of multilayer thin film was monitored by UV-visible spectroscopy, and the films were further characterized by atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). The drug release kinetics of these BSA nanoparticles and their self-assembled thin film has been compared at a physiological pH of 7.4 and an acidic pH of 6.4.

Unusual photoresponse of indium doped ZnO/organic thin film heterojunction

Photoresponse of n-type indium-doped ZnO and a p-type polymer (PEDOT:PSS) heterojunction devices are studied, juxtaposed with the photoluminescence of the In-ZnO samples. In addition to the expected photoresponse in the ultraviolet, the heterojunctions exhibit significant photoresponse to the visible (532 nm). However, neither the doped ZnO nor PEDOT: PSS individually show any photoresponse to visible light. The sub-bandgap photoresponse of the heterojunction originates from visible photon mediated e-h generation between the In-ZnO valence band and localized states lying within the band gap. Though increased doping of In-ZnO has limited effect on the photoluminescence, it significantly diminishes the photoresponse. The study indicates that optimally doped devices are promising for the detection of wavelengths in selected windows in the visible. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4704655]

Stability of developing film flow down an inclined surface

Film flows on inclined surfaces are often assumed to be of constant thickness, which ensures that the velocity profile is half-Poiseuille. It is shown here that by shallow water theory, only flows in a portion of Reynolds number-Froude number (Re-Fr) plane can asymptotically attain constant film thickness. In another portion on the plane, the constant thickness solution appears as an unstable fixed point, while in other regions the film thickness seems to asymptote to a positive slope. Our simulations of the Navier-Stokes equations confirm the predictions of shallow water theory at higher Froude numbers, but disagree with them at lower Froude numbers. We show that different regimes of film flow show completely different stability behaviour from that predicted earlier. Supercritical decelerating flows are shown to be always unstable, whereas accelerating flows become unstable below a certain Reynolds number for a given Froude number. Subcritical flows on the other hand are shown to be unstable above a certain Reynolds number. In some range of parameters, two solutions for the base flowexist, and the attached profile is found to be more stable. All flows except those with separation become more stable as they proceed downstream. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4758299]

Electron field emission from reduced graphene oxide on polymer film

Field emission of reduced graphene oxide coated on polystyrene film is studied in both parallel and perpendicular configurations. Low turn-on field of 0.6 V/lm and high emission current density of 200 mA/cm(2) are observed in perpendicular configuration (along the cross section), whereas a turn-on field of 6 V/lm and current density of 20 mu A/cm(2) are obtained in parallel configuration (top surface). The emission characteristics follow Fowler-Nordheim (FN) tunneling and the values of enhancement factor estimated from FN plots are 5818 (perpendicular) and 741 (parallel). Furthermore, stability and repeatability of the field emission characteristics in perpendicular configuration are presented. (C) 2013 American Institute of Physics. http://dx.doi.org/10.1063/1.4788738]

Giant Magnetoresistance and Related Properties of Rare Earth Manganates and Other Oxide Systems

Giant magnetoresistance (GMR), which was until recently confined to magnetic layered and granular materials, as well as doped magnetic semiconductors, occurs in manganate perovskites of the general formula Ln(1-x)A(x)MnO(3) (Ln = rare earth; A = divalent ion). These manganates are ferromagnetic at or above a certain value of x (or Mn4+ content) and become metallic at temperatures below the curie temperature, T-c. GMR is generally a maximum close to T-c or the insulator-metal (I-M) transition temperature, T-im. The T-c and %MR are markedly affected by the size of the A site cation, [r(A)], thereby affording a useful electronic phase diagram when T-c or T-im is plotted against [r(A)]. We discuss GMR and related properties of manganates in polycrystalline, thin-film, and single-crystal forms and point out certain commonalities and correlations. We also examine some unusual features in the electron-transport properties of manganates, in particular charge-ordering effects. Charge ordering is crucially dependent on [r(A)] or the e(g) band width, and the charge-ordered insulating state transforms to a metallic ferromagnetic state on the application of a magnetic field.

Field and potential around local scatterers in thin metal films studied by scanning tunneling potentiometry

We report the direct observation of electrochemical potential and local transport field variations near scatterers like grain boundaries, triple points, and voids in thin platinum films studied by scanning tunneling potentiometry. The field is highest at a void, followed by a triple point and a grain boundary. The local transport field near a void can even be four orders of magnitude higher than the macroscopic field, indicating that the void is the most likely place for an electromigration induced failure. The field build up for a particular type of scatterer depends on the grain connectivity. We estimate an average grain boundary reflection coefficient for the film from the temperature dependence of its resistivity.

Growth and study of antiferroelectric lead zirconate thin films by pulsed laser ablation

Antiferroelectric lead zirconate (PZ) thin films were deposited by pulsed laser ablation on platinum-coated silicon substrates. Films showed a polycrystalline pervoskite structure upon annealing at 650 degrees C for 5-10 min. Dielectric properties were investigated as a function of temperature and frequency. The dielectric constant of PZ films was 220 at 100 kHz with a dissipation factor of 0.03. The electric field induced transformation from the antiferroelectric phase to the ferroelectric phase was observed through the polarization change, using a Sawyer-Tower circuit. The maximum polarization value obtained was 40 mu C/cm(2). The average fields to excite the ferroelectric state, and to reverse to the antiferroelectric state were 71 and 140 kV/cm, respectively. The field induced switching was also observed through double maxima in capacitance-voltage characteristics. Leakage current was studied in terms of current versus time and current versus voltage measurements. A leakage current density of 5x10(-7) A/cm(2) at 3 V, for a film of 0.7 mu m thickness, was noted at room temperature. The trap mechanism was investigated in detail in lead zirconate thin films based upon a space charge limited conduction mechanism. The films showed a backward switching time of less than 90 ns at room temperature.