358 resultados para semiconductor materials


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A brief survey of the historical development of a photoelectrochemical solar cell is given. The principle and future of solar chargeable battery is compared with a wet and a dry type photovoltaic cell. A solar chargeable battery, with or without a membrane and with an aqueous solution or with solid-state electrolytes is discussed. A new unique type of configuration “Sharon-Schottky” junction solar cell is described which can be used either as a charger for any secondary batteries or could be used for photoelectrolysis of water. All these configurations and their relative merits are discussed. A review on the various semiconductors and types of solar chargeable batteries is made. Finally, a conclusion is drawn for future direction of research for developing an economically viable photoelectrochemical (PEC) solar cell based on either the principle of a solar charger (to charge a Ni---Cd battery or lead—acid battery) and/or solar chargeable battery with or without without a membrane. Some new innovative ideas for the preparation of materials is discussed. The entire discussion is geared towards answering a relevant question: what has gone wrong to result in the stagnation and failure in commercialization of a PEC based solar cell?

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Hybrid frictional-kinetic equations are used to predict the velocity, grain temperature, and stress fields in hoppers. A suitable choice of dimensionless variables permits the pseudo-thermal energy balance to be decoupled from the momentum balance. These balances contain a small parameter, which is analogous to a reciprocal Reynolds number. Hence an approximate semi-analytical solution is constructed using perturbation methods. The energy balance is solved using the method of matched asymptotic expansions. The effect of heat conduction is confined to a very thin boundary layer near the exit, where it causes a marginal change in the temperature. Outside this layer, the temperature T increases rapidly as the radial coordinate r decreases. In particular, the conduction-free energy balance yields an asymptotic solution, valid for small values of r, of the form T proportional r-4. There is a corresponding increase in the kinetic stresses, which attain their maximum values at the hopper exit. The momentum balance is solved by a regular perturbation method. The contribution of the kinetic stresses is important only in a small region near the exit, where the frictional stresses tend to zero. Therefore, the discharge rate is only about 2.3% lower than the frictional value, for typical parameter values. As in the frictional case, the discharge rate for deep hoppers is found to be independent of the head of material.

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C21H22N2045, M r = 398.5, orthorhombic, P212~21, a = 9.799 (1), b = 11.853 (1), c = 17.316(2)/~, V=2011.4A 3, Z=4, Dm=l.320, Dx=1.314Mgm -3, CuKa, A=1.5418A, Iz= 1.63 ram-1, F(000) = 840.0, T = 293 K, R = 0.055 for 1735 significant reflections. In the 1-methylthio-2- nitrovinyl moiety the C--C bond, 1.368 (7)A, is significantly longer than in ethylene, 1.336 (2)/~. The second harmonic generation (SHG) efficiency of this compound is only 0.25 of the urea standard. The correlation between the molecular packing and SHG is discussed.

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The recombination and the faradaic fluxes are shown to be sensitive to the location of a single level recombination center, when it is located near the band edges. As the surface level is shifted deeper into the band gap from either of the band edges, the back emission terms are dominated by electron capture and hole capture terms, and the occupancy of the surface level is no longer determined by its location in the band gap. However, when one of the back emission terms determines the surface state occupancy, it is shown that there exists a simple relation between the value of the surface level and the recombination and the faradaic fluxes respectively. Expressions to this effect are derived and verified in the case of the recombination flux, which characterized by the potential at which it attains its maximum value. For the faradaic flux the results are qualitative.

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A study of the correlations between material properties and normalized erosion resistance (inverse of erosion rates) of various materials tested in the rotating disk and the flow venturi at various intensities indicates that different individual properties influence different stages of erosion. At high and low intensities of erosion, energy properties predominate the phenomenon, whereas at intermediate intensities strength and acoustic properties become more significant. However, both strength and energy properties are significant in the correlations for the entire spectrum of erosion when extensive cavitation and liquid impingement data from several laboratories involving different intensities and hydrodynamic conditions are considered. The use of true material properties improved the statistical parameters by 3 to 37%, depending on the intensity of erosion. It is possible to evaluate qualitatively the erosion resistances of materials based on the true stress-true strain curves.

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The influence of gold (similar to 35 nm diameter) as well as ReO3 (similar to 17 nm diameter) nanoparticles placed atop silicon photovoltaic devices on absorption and photocurrent generation has been investigated. The nanoparticles improve the power transmission into the semiconductor and consequently, the photocurrent response at wavelengths corresponding to plasmon absorption. An increase in short circuit current up to 4.5% under simulated solar irradiation was observed with the ReO3 nanoparticles, while the gold nanoparticles showed enhancements up to 6.5%. The increase in photocurrent is observed at wavelengths corresponding to the maxima in the surface plasmon resonance absorption spectra. (C) 2010 The Japan Society of Applied Physics

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Proper formulation of stress-strain relations, particularly in tension-compression situations for isotropic biomodulus materials, is an unresolved problem. Ambartsumyan's model [8] and Jones' weighted compliance matrix model [9] do not satisfy the principle of coordinate invariance. Shapiro's first stress invariant model [10] is too simple a model to describe the behavior of real materials. In fact, Rigbi [13] has raised a question about the compatibility of bimodularity with isotropy in a solid. Medri [2] has opined that linear principal strain-principal stress relations are fictitious, and warned that the bilinear approximation of uniaxial stress-strain behavior leads to ill-working bimodulus material model under combined loading. In the present work, a general bilinear constitutive model has been presented and described in biaxial principal stress plane with zonewise linear principal strain-principal stress relations. Elastic coefficients in the model are characterized based on the signs of (i) principal stresses, (ii) principal strains, and (iii) on the value of strain energy component ratio ER greater than or less than unity. The last criterion is used in tension-compression and compression-tension situations to account for different shear moduli in pure shear stress and pure shear strain states as well as unequal cross compliances.

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The sharp increase in microwave power loss (the reverse of what has previously been reported) at the transition temperature in high-Tc superconducting systems such as YBaCu oxide (polycrystalline bulk and thin films obtained by the laser ablation technique) and BiPbSrCaCu oxide is reported. The differences between DC resistivity ( rho ) and the microwave power loss (related to microwave surface resistance) are analysed from the data obtained by a simultaneous measurement set-up. The influence of various parameters, such as preparation conditions, thickness and aging of the sample and the probing frequency (6-18 GHz), on the variation of microwave power loss with temperature is outlined.

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We study the electronic structure of La1-xSrxMnO3+δ, x=0, 0.1, 0.2, 0.3, and 0.4, across the semiconductor-metal transition, using various electron spectroscopy techniques. The negligible intensity seen at EF using ultraviolet photoemission spectroscopy and bremsstrahlung isochromat spectroscopy (BIS) indicate an unusual semiconductor-metal transition observed for x≥0.2, consistent with the resistivity data. The BIS spectra show doped hole states developing about 1.4 eV above EF as a function of x. Auger electron spectroscopy gives an estimate of the intra-atomic Coulomb energy in the O 2p manifold to be about 6.8 eV. The Mn 2p core-level spectrum of LaMnO3, analyzed in terms of a configuration-interaction calculation, gives parameter values of the charge-transfer energy Δ=5.0 eV, the hybridization strength between Mn 3d and O 2p states, t=3.8 eV, and the on-site Coulomb energy in Mn 3d states Udd=4.0 eV, suggesting a mixed character for the ground state of LaMnO3.

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A new feature-based technique is introduced to solve the nonlinear forward problem (FP) of the electrical capacitance tomography with the target application of monitoring the metal fill profile in the lost foam casting process. The new technique is based on combining a linear solution to the FP and a correction factor (CF). The CF is estimated using an artificial neural network (ANN) trained using key features extracted from the metal distribution. The CF adjusts the linear solution of the FP to account for the nonlinear effects caused by the shielding effects of the metal. This approach shows promising results and avoids the curse of dimensionality through the use of features and not the actual metal distribution to train the ANN. The ANN is trained using nine features extracted from the metal distributions as input. The expected sensors readings are generated using ANSYS software. The performance of the ANN for the training and testing data was satisfactory, with an average root-mean-square error equal to 2.2%.

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We elucidate the relationship between effective mass and carrier concentration in an oxide semiconductor controlled by a double-doping mechanism. In this model oxide system, Sr1-xLaxTiO3-delta, we can tune the effective mass ranging from 6 to 20m(e) as a function of filling (carrier concentration) and the scattering mechanism, which are dependent on the chosen lanthanum-and oxygen-vacancy concentrations. The effective mass values were calculated from the Boltzmann transport equation using the measured transport properties of thin films of Sr1-xLaxTiO3-delta. We show that the effective mass decreases with carrier concentration in this large-band-gap, low-mobility oxide, and this behavior is contrary to the traditional high-mobility, small-effective-mass semiconductors.