173 resultados para regenerative process
Resumo:
We present a statistical methodology for leakage power estimation, due to subthreshold and gate tunneling leakage, in the presence of process variations, for 65 nm CMOS. The circuit leakage power variations is analyzed by Monte Carlo (MC) simulations, by characterizing NAND gate library. A statistical “hybrid model” is proposed, to extend this methodology to a generic library. We demonstrate that hybrid model based statistical design results in up to 95% improvement in the prediction of worst to best corner leakage spread, with an error of less than 0.5%, with respect to worst case design.
Resumo:
A novel comparator architecture is proposed for speed operation in low voltage environment. Performance comparison with a conventional regenerative comparator shows a speed-up of 41%. The proposed comparator is embedded in a continuous time sigma-delta ADC so as to reduce the quantizer delay and hence minimizes the excess loop delay problem. A performance enhancement of 1dB in the dynamic range of the ADC is achieved with this new comparator. We have implemented this ADC in a standard single-poly 8-Metal 0.13 mum UMC process. The entire system operates at 1.2 V supply providing a dynamic range of 32 dB consuming 720 muW of power and occupies an area of 0.1 mm2.
Resumo:
This paper presents the topology selection, design steps, simulation studies, design verification, system fabrication and performance evaluation on an induction motor based dynamometer system. The control algorithm used the application is well known field oriented control or vector control. Position sensorless scheme is adopted to eliminate the encoder requirement. The dynamometer is rated for 3.7kW. It can be used to determine the speed–torque characteristics of any rotating system. The rotating system is to be coupled with the vector controlled drive and the required torque command is given from the latter. The experimental verification is carried out for an open loop v/f drive as a test rotating system and important test results are presented.
Resumo:
Validation of the flux partitioning of species model has been illustrated. Various combinations of inequality expression for the fluxes of species A and B in two successively grown hypothetical intermetallic phases in the interdiffusion zone have been considered within the constraints of this concept. Furthermore, ratio of intrinsic diffusivities of the species A and B in those two phases has been correlated in four different cases. Moreover, complete and or partial validation or invalidation of this model with respect to both the species, has been proven theoretically and also discussed with the Co-Si system as an example.
Resumo:
In this paper we develop and numerically explore the modeling heuristic of using saturation attempt probabilities as state dependent attempt probabilities in an IEEE 802.11e infrastructure network carrying packet telephone calls and TCP controlled file downloads, using enhanced distributed channel access (EDCA). We build upon the fixed point analysis and performance insights. When there are a certain number of nodes of each class contending for the channel (i.e., have nonempty queues), then their attempt probabilities are taken to be those obtained from saturation analysis for that number of nodes. Then we model the system queue dynamics at the network nodes. With the proposed heuristic, the system evolution at channel slot boundaries becomes a Markov renewal process, and regenerative analysis yields the desired performance measures. The results obtained from this approach match well with ns2 simulations. We find that, with the default IEEE 802.11e EDCA parameters for AC 1 and AC 3, the voice call capacity decreases if even one file download is initiated by some station. Subsequently, reducing the voice calls increases the file download capacity almost linearly (by 1/3 Mbps per voice call for the 11 Mbps PHY)
Resumo:
Titanium dioxide (TiO(2)) and silicon dioxide (SiO(2)) thin films and their mixed films were synthesized by the sol-gel spin coating method using titanium tetra isopropoxide (TTIP) and tetra ethyl ortho silicate (TEOS) as the precursor materials for TiO(2) and SiO(2) respectively. The pure and composite films of TiO(2) and SiO(2) were deposited on glass and silicon substrates. The optical properties were studied for different compositions of TiO(2) and SiO(2) sols and the refractive index and optical band gap energies were estimated. MOS capacitors were fabricated using TiO(2) films on p-silicon (1 0 0) substrates. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were studied and the electrical resistivity and dielectric constant were estimated for the films annealed at 200 degrees C for their possible use in optoelectronic applications. (C) 2011 Elsevier B.V. All rights reserved.