Band Structures of Bilayer Graphene Superlattices

We formulate a low energy effective Hamiltonian to study superlattices in bilayer graphene (BLG) using a minimal model which supports quadratic band touching points. We show that a one dimensional (1D) periodic modulation of the chemical potential or the electric field perpendicular to the layers leads to the generation of zero-energy anisotropic massless Dirac fermions and finite energy Dirac points with tunable velocities. The electric field superlattice maps onto a coupled chain model comprised of ``topological'' edge modes. 2D superlattice modulations are shown to lead to gaps on the mini-Brillouin zone boundary but do not, for certain symmetries, gap out the quadratic band touching point. Such potential variations, induced by impurities and rippling in biased BLG, could lead to subgap modes which are argued to be relevant to understanding transport measurements.

Study of band offsets in InN/Ge heterojunctions

InN layers were directly grown on Ge substrate by plasma-assisted molecular beam epitaxy (PAMBE). The valence band offset (VBO) of wurtzite InN/Ge heterojunction is determined by X-ray photoemission spectroscopy (XPS). The valence band of Ge is found to be 0.18 +/- 0.04 eV above that of InN and a type-II heterojunction with a conduction band offset (CBO) of similar to 0.16 eV is found. The accurate determination of the VBO and CBO is important for the design of InN/Ge based electronic devices. (C) 2011 Elsevier B.A. All rights reserved.

Polynomial Coefficient Based Multi-Tone Testing of Analog Circuits

Abstract—A method of testing for parametric faults of analog circuits based on a polynomial representaion of fault-free function of the circuit is presented. The response of the circuit under test (CUT) is estimated as a polynomial in the applied input voltage at relevant frequencies apart from DC. Classification of CUT is based on a comparison of the estimated polynomial coefficients with those of the fault free circuit. The method needs very little augmentation of circuit to make it testable as only output parameters are used for classification. This procedure is shown to uncover several parametric faults causing smaller than 5 % deviations the nominal values. Fault diagnosis based upon sensitivity of polynomial coefficients at relevant frequencies is also proposed.

V-Transform: “An Enhanced Polynomial Coefficient Based DC Test for Non-linear Analog Circuits

Abstract—DC testing of parametric faults in non-linear analog circuits based on a new transformation, entitled, V-Transform acting on polynomial coefficient expansion of the circuit function is presented. V-Transform serves the dual purpose of monotonizing polynomial coefficients of circuit function expansion and increasing the sensitivity of these coefficients to circuit parameters. The sensitivity of V-Transform Coefficients (VTC) to circuit parameters is up to 3x-5x more than sensitivity of polynomial coefficients. As a case study, we consider a benchmark elliptic filter to validate our method. The technique is shown to uncover hitherto untestable parametric faults whose sizes are smaller than 10 % of the nominal values. I.

LTCC ultra wide band filter

This article presents the analysis of ultra wide band (UWB) filler designed using a symmetrical three parallel coupled line resonator in low temperature co-fired ceramic (LTCC) medium: The ground plane with an aperture incorporated in it improves the coupling. Based on circuit models, the designed UWB filter has been analyzed, and the results have been confirmed by experiments. The filter has been realized with Dupont LTCC tape DuPont 951 (that has dielectric constant of 7.8). Maximum insertion loss of the experimental filter is 1.5 dB. The group variation over the pass band of the filter is within 0.2 us. Dimensions of the experimental LTCC filter are 20 x 10 x 0.72 mm. (C) 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:2580-2583,2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26311

Design of compact low pass filter with wide stop band using tri-section stepped impedance resonator

This paper reports the design of a compact low pass filter (LPF) with wide stop band region using trisection stepped impedance resonators in microstrip medium. Experimental results of a low pass filter designed at 1 GHz have been compared against the analytical and EM simulation results for the validation of the design. Results are satisfactorily matching each other. The maximum insertion of the measured filter is 0.2 dB and minimum return loss is 13.5 dB over the pass band. The stop band rejection is better than 20 dB from 1.5 GHz to 4.2 GHz and hence wide stop band performance is achieved. Overall size of the filter is 30 mm x 20 mm x 0.78 mm which is 0.1 lambda x 0.066 lambda. x 0.0026 lambda at 1 GHz. (C) 2011 Elsevier GmbH. All rights reserved.

Alloying induced degradation of the absorption edge of InAsxSb1-x

InAsxSb1−x alloys show a strong bowing in the energy gap, the energy gap of the alloy can be less than the gap of the two parent compounds. The authors demonstrate that a consequence of this alloying is a systematic degradation in the sharpness of the absorption edge. The alloy disorder induced band-tail (Urbach tail) characteristics are quantitatively studied for InAs0.05Sb0.95.

Band alignment studies in InN/p-Si(100) heterojunctions by x-ray photoelectron spectroscopy

The band offsets in InN/p-Si heterojunctions are determined by high resolution x-ray photoemission spectroscopy. The valence band of InN is found to be 1.39 eV below that of Si. Given the bandgap of 0.7 eV for InN, a type-III heterojunction with a conduction band offset of 1.81 eV was found. Agreement between the simulated and experimental data obtained from the heterojunction spectra was found to be excellent, establishing that the method of determination was accurate. The charge neutrality level (CNL) model provided a reasonable description of the band alignment of the InN/p-Si interface and a change in the interface dipole by 0.06 eV was observed for InN/p-Si interface.