Study of band offsets in InN/Ge heterojunctions
| Data(s) |
01/08/2011
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| Resumo |
InN layers were directly grown on Ge substrate by plasma-assisted molecular beam epitaxy (PAMBE). The valence band offset (VBO) of wurtzite InN/Ge heterojunction is determined by X-ray photoemission spectroscopy (XPS). The valence band of Ge is found to be 0.18 +/- 0.04 eV above that of InN and a type-II heterojunction with a conduction band offset (CBO) of similar to 0.16 eV is found. The accurate determination of the VBO and CBO is important for the design of InN/Ge based electronic devices. (C) 2011 Elsevier B.A. All rights reserved. |
| Formato |
application/pdf |
| Identificador |
http://eprints.iisc.ernet.in/40555/1/Study_of_band.pdf Kumar, Mahesh and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Roul, Basanta and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Study of band offsets in InN/Ge heterojunctions. In: Surface Science, 605 (15-16). L33-L37. |
| Publicador |
Elsevier Science B.V. |
| Relação |
http://dx.doi.org/10.1016/j.susc.2011.04.019 http://eprints.iisc.ernet.in/40555/ |
| Palavras-Chave | #Materials Research Centre |
| Tipo |
Journal Article PeerReviewed |
