Electrical transport in Bi doped n-type amorphous semiconductors (GeSe3.5)100-xBix at high pressure

Electrical transport in Bi doped amorphous semiconductors (GeSe3.5)100-xBix (x=0,4,10) is studied in a Bridgman anvil system up to a pressure of 90 kbar and down to 77 K. A pressure induced continuous transition from an amorphous semiconductor to a metal-like solid is observed in GeSe3.5. The addition of Bi disturbs significantly the behaviour of resistivity with pressure. The results are discussed in the light of molecular cluster model for GeySe1-y proposed by Phillips.

Electron spin resonance study of copper(II) doped ferroelectric ammonium sulphate

Single crystal electron spin resonance studies of Cu2+ doped ferroelectric ammonium sulphate ((NH4)2SO4, Tc = 223 K) are reported at 300 and 77 K. The Cu2+ ion is found to enter the lattice interstitially with a trigonal bipyramidal coordination. Proton superhyperfine interaction is found for magnetic field directions close to the a-axis. Changes are observed in the 77 K recordings indicating a distortion of the trigonal bipyramid consistent with crystal structure data. An increase of the proton superhyperfine constant in the ferroelectric phase is indicative of stronger hydrogen bonding. The Cu2+ ion doped as an impurity in a trigonal bipyramid environment in a diamagnetic host lattice is reported for the first time.

Itinerant electron ferromagnetism in Sr2+-, Ca2+-, and Ba2+-doped rare-earth orthocobaltites (Ln3+1�xM2+xCoO3)

Electronic and magnetic properties of Ln1�xSrxCoO3 (Ln = Pr, Nd, Sm, Eu, and Gd) systems show that above a critical value of x, the d electrons become itinerant while the materials become ferromagnetic at low temperatures. The ferromagnetic component increases with increase in x and decrease in temperature. The Curie temperature increases with x and decreases with decrease in the size of the rare-earth ion. Incorporation of Ba2+ in LaCoO3 favors itinerant electron ferromagnetism relative to Sr2+ while Ca2+ is less favorable than Sr2+.

Ferromagnetic resonance in Sr2+ doped rare earth orthocobaltites, Ln1â xSrxCoO3

FMR measurements have been carried out on several members of the Ln1âxSrxCoO3 (Ln = Rare earth) system. The results show that geff in these systems is around 1.25 independent of x as well as the rare earth ion. It is suggested that this unusual value of geff is due to the localized intermediate-spin Co3+ ions (t52ge1g) located at the top of the Ï* band.

A model for doped-oxide-source diffusion with a chemical reaction at the silicon-silicon dioxide interface

A mathematical model for doped-oxide-source diffusion is proposed. In this model the concept of segregation of impurity at the silicon-silicon dioxide is used and also a constant of “rate limitation” is introduced through a chemical reaction at the interface.

Dielectric properties of Li2O-3B(2)O(3) glasses

The frequency and temperature dependences of the dielectric constant and the electrical conductivity of the transparent glasses in the composition Li2O-3B(2)O(3) were investigated in the 100 Hz-10 MHz frequency range. The dielectric constant and the loss in the low frequency regime were electrode material dependent. Dielectric and electrical relaxations were, respectively, analyzed using the Cole-Cole and electric modulus formalisms. The dielectric relaxation mechanism was discussed in the framework of electrode and charge carrier (hopping of the ions) related polarization using generalized Cole-Cole expression. The frequency dependent electrical conductivity was rationalized using Jonscher's power law. The activation energy associated with the dc conductivity was 0.80 +/- 0.02 eV, which was ascribed to the motion of Li+ ions in the glass matrix. The activation energy associated with dielectric relaxation was almost equal to that of the dc conductivity, indicating that the same species took part in both the processes. Temperature dependent behavior of the frequency exponent (n) suggested that the correlated barrier hopping model was the most apposite to rationalize the electrical transport phenomenon in Li2O-3B(2)O(3) glasses. These glasses on heating at 933 K/10 h resulted in the known nonlinear optical phase LiB3O5.

Study of As2(Se,Te)3 glasses by X-ray absorption and photoelectron spectroscopy

Arsenic selenide-telluride glasses have been investigated by X-ray absorption and photoelectron spectroscopy. The core electron energy shifts and chemical shifts in K-absorption edge measurements associated with the glass-crystal transitions of pure As2Se3 and As2Te3 have been studied. The effect of composition on the core level energy and valence bands of As2(Se,Te)3 glasses, has been discussed. Mixed-composition glasses are found to be considerably ionic.

Rapid quenching and glass formation in chalcogenide glasses: Preparation and properties of Ge-As-Te glasses over an extended composition ranges

In Ge-As-Te system, the glass forming region determined by normal melt quenching method has two regions (GFR I and GFR II) separated by few compositions gap. With a simple laboratory built twin roller apparatus, we have succeeded in preparing Ge7.5AsxTe92.5-x glasses over extended composition ranges. A distinct change in T-g is observed at x = 40, exactly at which the separation of the glass forming regions occur indicating the changes in the connectivity and the rigidity of the structural network. The maximum observed in glass transition (T-g) at x = 55 corresponding to the average coordination number (Z(av)) = 2.70 is an evidence for the shift of the rigidity percolation threshold (RPT) from Z(av) = 2.40 as predicted by the recent theories. The glass forming tendency (K-gl) and Delta T (=T-c-T-g) is low for the glasses in the GFR I and high for the glasses in the GFR II.

Evidence of an intermediate phase in ternary Ge7Se93-xSbx glasses

The compositional dependence of thermal properties, such as glass transition temperature (T-g), non-reversing enthalpy change (Delta H-NR) and the specific heat capacity change (Delta C-p) of melt quenched Ge7Se93-xSbx (21 a parts per thousand currency sign x a parts per thousand currency sign 31) glasses, has been studied using alternating differential scanning calorimetry (ADSC) which is analogous to modulated differential scanning calorimetry (MDSC). The glass transition temperature, T-g, which is a measure of global connectivity of the glass, has been found to increase with the addition of Sb. In addition, a change in slope has been observed in the composition dependence of T-g at an average coordination aOE (c) r > = 2.40. The experimentally observed compositional variation of glass transition temperature, has been compared with the theoretical predictions from the stochastic agglomeration theory (SAT) and has been found to be consistent. Further, a narrow thermally reversing window is seen in the compositional variation of the relaxation enthalpy (Delta H-NR), which is centered around aOE (c) r > = 2.40. The change in specific heat capacity (Delta C-p) at T-g is also found to exhibit a distinct minima at aOE (c) r > = 2.40, suggesting that the structural rearrangements for the liquid in the glass transition region are minimized around aOE (c) r > = 2.4.

Glass transitions in arsenic-selenium glasses

Glaiis transitions of As-Se glasses have been investigated over a wide range of compositions by using differential scanning calorimetry. The variation of Tg with composition has been interpreted on the basis of a bond-lattice model.

Structural, dielectric, impedance and optical properties of CaBi2B2O7 glasses and glass-nanocrystal composites

Optically clear glasses were fabricated by quenching the melt of CaCO3-Bi2O3-B2O3 (in equimolecular ratio). The amorphous and glassy characteristics of the as-quenched samples were confirmed via the X-ray powder diffraction (XRD) and differential scanning calorimetric (DSC) studies These glasses were found to. have high thermal stability parameter (S). The optical transmission studies carried out in the 200-2500 nm wavelength range confirmed both the as-quenched and heat-treated samples to be transparent between 400 nm and 2500 nm. The glass-plates that were heat-treated just above the glass transition temperature (723 K) for 6 h retained approximate to 60% transparency despite having nano-crystallites (approximate to 50-100 nm) of CaBi2B2O7 (CBBO) as confirmed by both the XRD and transmission electron microscopy (TEM) studies. The dielectric properties and impedance characteristics of the as-quenched and heat-treated (723 K/6 h) samples were studied as a function of frequency at different temperatures. Cole-Cole equation was employed to rationalize the impedance data.

Spinodal Decomposition in Tellurite-Based Glasses Induced by Excimer Laser Irradiation

Tellurite-based glasses in the TeO2-K3Li2Nb5O15, TeO2-Ba5Li2Ti2Nb8O30, and V2Te2O9 were fabricated by the conventional melt-quenching technique. Amorphous and glassy characteristics of the as-quenched samples were established via the X-ray powder diffraction technique and differential thermal analysis, respectively. The as-quenched samples were irradiated by an excimer laser (248 nm). The effect of laser power, duration of irradiation, and the frequency of the laser pulses on the surface features of the above glasses were studied. The optical microscopic studies carried out on the above systems revealed the presence of quasi-periodic and periodic structures on their surfaces. The local compositional variations of these structures were confirmed by back-scattered electron imaging using scanning electron microscope accompanied by energy-dispersive X-ray analysis. These results were convincing enough to state that the glasses in the present investigations had undergone spinodal decomposition on laser irradiation. The incidence of the interconnected texture of two different phases was observed owing to the quenching effect produced by the heating and cooling cycle of the successive laser pulses. Ring- and line-shaped patterns were also observed, respectively, when the pulse frequency of the laser and the duration of irradiation were increased.

Mixed mode (I and II) crack tip fields in bulk metallic glasses

Stationary crack tip fields in bulk metallic glasses under mixed mode (I and II) loading are studied through detailed finite element simulations assuming plane strain, small scale yielding conditions. The influence of internal friction or pressure sensitivity on the plastic zones. notch deformation, stress and plastic strain fields is examined for different mode mixities. Under mixed mode loading, the notch deforms into a shape such that one part of its surface sharpens while the other part blunts. Increase in mode If component of loading dramatically enhances the normalized plastic zone size, lowers the stresses but significantly elevates the plastic strain levels near the notch tip. Higher internal friction reduces the peak tangential stress but increases the plastic strain and stretching near the blunted part of the notch. The simulated shear bands are straight and extend over a long distance ahead of the notch tip under mode II dominant loading. The possible variations of fracture toughness with mode mixity corresponding to failure by brittle micro-cracking and ductile shear banding are predicted employing two simple fracture criteria. The salient results from finite element simulations are validated by comparison with those from mixed mode (I and II) fracture experiments on a Zr-based bulk metallic glass.

Possible mechanism of charge transport and dielectric relaxation in SrO-Bi2O3-B2O3 glasses

Transparent SrBi2B2O7 glasses were prepared via melt-quenching technique and characterized using differential scanning calorimetry and x-ray powder diffraction. The ac conductivities of the glasses were studied as a function of frequency (100 Hz-10 MHz) at different temperatures. The frequency dependence of conductivity has been analyzed using Almond-West expression. The exponent n was nearly unaffected by temperature. Impedance and modulus spectroscopies were employed to further examine the electrical data. Dielectric relaxation exhibited a stretched exponential behavior with a stretching exponent beta independent of temperature. From conductivity analysis we have proposed that the charge transport occurs through the participation of nonbridging oxygen (NBO), which switches positions in a facile manner. The stretched exponential behavior appears to be a direct consequence of the NBO switching mechanism of charge transport.

Diffusion and Creep in Silica-Doped Tetragonal Zirconia

Silica segregation at two grain junctions or in amorphous triple junction pockets can influence creep by altering the grain-boundary diffusion coefficient. Although the addition of silica to superplastic yttria-stabilized tetragonal zirconia enhances ductility, differences in reported creep parameters have limited critical identification of rate controlling mechanisms. The present study on a pure 3 mol% yttria-stabilized tetragonal zirconia (3YTZ) and 3YTZ with 0.39 or 3.9 wt% silica involved a detailed characterization of creep over a wide range of experimental conditions and also tracer diffusion measurements. The data broadly show transitions in creep stress exponents from n∼1 to ∼2 to ∼3 with a decrease in the stress. The data at high stresses are consistent with Coble diffusion creep, and creep at lower stresses is attributed to interface-controlled diffusion creep. Measurements indicated that silica does not have any significant influence on grain boundary or lattice diffusion, and this is consistent with the observation that 3YTZ and 3YTZ with 0.39% or 3.9% silica exhibit essentially identical creep behavior in the Coble creep regime. Silica influences the interface control process so that the transitions in stress exponents are pushed to lower stresses with an increase in silica content.