397 resultados para Co doped
Resumo:
Octahedrally coordinated CoII and MoIV species are present on the surfaces of sulfided Co-Mo-Al2O3 catalysts used for hydrodesulfurization. They were characterized by XPE, EXAFS and XANES data. An excess of sulfur in the surface species can be explained in terms of the presence of S[stack 22 ] ions. Disulfide bridges could play a role in the hydrodesulfurization.
Resumo:
Donor doped BaTiO3 ceramics become insulating5 under controlled conditions with effective dielectric constants >10. The changes in EPR signals indicate that a certain fraction of the donor doped BaTiO3 is cubic even at room temperature and that the cubic fraction increases with the donor content. X-ray powder diffraction data support the EPR results. The coexistence of both the phases over a range of temperature is characteristic of diffused phase transition. The effect of grain size variation on EPR signal intensities indicate that the boundary layers surrounding the grains may constitute the cubic phase as a result of higher Ba-vacancies and donor contents at the grain boundary layer than in the bulk. Since the acceptor states arising from the Ba-vacancies and the impurities are activated in the cubic phase, they capture electrons from the conduction band, rendering the cubic phase electrically more insulating than the semiconductive tetragonal grain interiors. Thus, the cubic grain boundary layers act as effective dielectric media where the field tends to concentrate.
Resumo:
Trioxalatocobaltates of bivalent metals KM2+[Co(C2O4)3]·x H2O, with M2+ = Ba, Sr, Ca and Pb, have been prepared, characterized and their thermal behaviour studied. The compounds decompose to yield potassium carbonate, bivalent metal carbonate or oxide and cobalt oxide as final products. The formation of the final products of decomposition is influenced by the surrounding atmosphere. Bivalent metal cobaltites of the types KM2+CoO3 and M2+CoO3—x are not identified among the final products of decomposition. The study brings out the importance of the decomposition mode of the precursor in producing the desired end products.
Resumo:
Nanoindentation technique was employed to measure the changes in mechanical properties of a glass preform subjected to different levels of UV exposure. The results reveal that short-term exposure leads to an appreciable increase in the Young's modulus (E), suggesting the densification of the glass, confirming the compaction-densification model. However, on prolonged exposure, E decreases, which provides what we believe to be the first direct evidence of dilation in the glass leading into the Type IIA regime. The present results rule out the hypothesis that continued exposure leads to an irreversible compaction and prove that index modulation regimes are intrinsic to the glass matrix.
Resumo:
Three-component metal-inorganic assembly of a Co(II) network representing the first example of a 3D coordination polymer containing a hydrazine bridging ligand, has been synthesized and characterized.
Resumo:
Reaction of Bi2O3 with MgO, NiO, Co3O4 and Al2O3 gives rise to the corresponding ternary bismuth oxides, Bi18Mg8O36, Bi18Ni8O36, Bi20Co6O39 and Bi24Al2O39. These oxides have the general formula Bi26�xMxO40�y and exhibit BCC structures related to α - Bi2O3. In the first three solids, the metal ions, M, replace bismuth randomly at the octahedral 24r sites (space group 123); in the last case, aluminium ions occupy the tetrahedral 2a sites, the phase being isostructural with Bi24Ge2O40. Starting from Bi2O3 and NiO, orthorhombic Bi2Ni2O5 has also been obtained.
Resumo:
Electrical transport in Bi doped amorphous semiconductors (GeSe3.5)100-xBix (x=0,4,10) is studied in a Bridgman anvil system up to a pressure of 90 kbar and down to 77 K. A pressure induced continuous transition from an amorphous semiconductor to a metal-like solid is observed in GeSe3.5. The addition of Bi disturbs significantly the behaviour of resistivity with pressure. The results are discussed in the light of molecular cluster model for GeySe1-y proposed by Phillips.
Resumo:
Single crystal electron spin resonance studies of Cu2+ doped ferroelectric ammonium sulphate ((NH4)2SO4, Tc = 223 K) are reported at 300 and 77 K. The Cu2+ ion is found to enter the lattice interstitially with a trigonal bipyramidal coordination. Proton superhyperfine interaction is found for magnetic field directions close to the a-axis. Changes are observed in the 77 K recordings indicating a distortion of the trigonal bipyramid consistent with crystal structure data. An increase of the proton superhyperfine constant in the ferroelectric phase is indicative of stronger hydrogen bonding. The Cu2+ ion doped as an impurity in a trigonal bipyramid environment in a diamagnetic host lattice is reported for the first time.
Resumo:
Electronic and magnetic properties of Ln1�xSrxCoO3 (Ln = Pr, Nd, Sm, Eu, and Gd) systems show that above a critical value of x, the d electrons become itinerant while the materials become ferromagnetic at low temperatures. The ferromagnetic component increases with increase in x and decrease in temperature. The Curie temperature increases with x and decreases with decrease in the size of the rare-earth ion. Incorporation of Ba2+ in LaCoO3 favors itinerant electron ferromagnetism relative to Sr2+ while Ca2+ is less favorable than Sr2+.
Resumo:
The co-doping effect of Zn and Pr impurities in the compound of composition Y1-xPrxBa2[Cu1-yZny](3)O7-delta with x = 0.1, x = 0.2 and 0 <= y <= 0.1 has been investigated by analyzing the results of electrical resistivity measurements. It is found that for Pr substitution at x = 0.1, there is a minimal influence on in-plane processes, thereby slightly affecting T-c and residual resistivity rho(0), but with the resistivity slope d rho/dT becoming large for the range of y from 0.03 to 0.06, leading to a larger depinning effect. For x = 0.2 a drastic change is observed whereby rho(0) becomes abnormally large, and d rho/dT becomes negative, implying totally pinned charge stripes and no depinning. The second observation therefore suggests that Pr substitution converts the overdoped system to an optimally doped system, leading to the universal superconductor-insulator transition.
Resumo:
FMR measurements have been carried out on several members of the Ln1âxSrxCoO3 (Ln = Rare earth) system. The results show that geff in these systems is around 1.25 independent of x as well as the rare earth ion. It is suggested that this unusual value of geff is due to the localized intermediate-spin Co3+ ions (t52ge1g) located at the top of the Ï* band.
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A mathematical model for doped-oxide-source diffusion is proposed. In this model the concept of segregation of impurity at the silicon-silicon dioxide is used and also a constant of “rate limitation” is introduced through a chemical reaction at the interface.
Resumo:
The characterization and properties of trans-(X)-[RuX2(CO)(2)(alpha/beta-NaiPy)] (1, 2) (alpha-NaiPy (a), beta-NaiPy (b); X = Cl (1), I (2)) are described in this work. The structures are confirmed by single crystal X-ray diffraction studies. Reaction of these compounds with Me3NO in MeCN has isolated monocarbonyl trans-(X)-RuX2(CO)(MeCN)(alpha/beta-NaiPy)] (3, 4). The complexes show intense emission properties. Quantum yields of 1 and 2 (phi= 0.02-0.08) are higher than 3 and 4 (phi = 0.006-0.015). Voltammogram shows higher Ru(III)/Ru(II) (1.3-1.5 V) potential of 1 and 2 than that of 3 and 4 (0.8-0.9 V) that may be due to coordination of two pi-acidic CO groups in former. The electronic spectra and redox properties of the complexes are compared with the results obtained by density functional theory (DFT) and time-dependent density functional theory (TD-DFT) using polarizable continuum model (CPCM).
Resumo:
Solvothermal treatment of an equimolar mixture of Co(NO3)(2)center dot 6H(2)O, HCONH2 and NaN3 in MeOH at 100 degrees C yielded a three-dimensional NaCl type network Co(HCOO)(2)(HCONH2)(2) center dot HCONH2 (1a) containing formamides in the pores of the structure. Solvated pink 1a undergoes single crystal-to-single crystal (SCSC) transformation at 215 degrees C to form the desolvated dark brown product Co(HCOO)(2)-( HCONH2)(2) (1b) with the retention of the original framework. Reversible single crystal-to-single crystal transformation of 1b (brown) to 1a (pink) in the presence of excess formamide was also established at room temperature. The coordination environment around Co(II) in both 1a and 1b is octahedral with a CoN2O4 coordination composition. A similar reaction replacing Co(II) by Cr(III) produced a heterometallic 3D extended network Na[Cr(HCOO)(4)(HCONH2)(2)]center dot 2H(2)O (2a) at 100 degrees C. An increase in reaction temperature to 150 degrees C produced a simple mononuclear complex Cr(HCOO)(3)(HCONH2)(3) center dot 3H(2)O (2b). Variable temperature magnetic studies revealed the presence of a canting phenomena in both 1a and 1b, and hysteresis loop in the field dependent magnetisation plot at 2 K whereas complex 2a is simply paramagnetic in nature.
Resumo:
Silica segregation at two grain junctions or in amorphous triple junction pockets can influence creep by altering the grain-boundary diffusion coefficient. Although the addition of silica to superplastic yttria-stabilized tetragonal zirconia enhances ductility, differences in reported creep parameters have limited critical identification of rate controlling mechanisms. The present study on a pure 3 mol% yttria-stabilized tetragonal zirconia (3YTZ) and 3YTZ with 0.39 or 3.9 wt% silica involved a detailed characterization of creep over a wide range of experimental conditions and also tracer diffusion measurements. The data broadly show transitions in creep stress exponents from n∼1 to ∼2 to ∼3 with a decrease in the stress. The data at high stresses are consistent with Coble diffusion creep, and creep at lower stresses is attributed to interface-controlled diffusion creep. Measurements indicated that silica does not have any significant influence on grain boundary or lattice diffusion, and this is consistent with the observation that 3YTZ and 3YTZ with 0.39% or 3.9% silica exhibit essentially identical creep behavior in the Coble creep regime. Silica influences the interface control process so that the transitions in stress exponents are pushed to lower stresses with an increase in silica content.