190 resultados para triode-MOSFET circuits
Resumo:
The implementation of three-phase sinusoidal pulse-width-modulated inverter control strategy using microprocessor is discussed in this paper. To save CPU time, the DMA technique is used for transferring the switching pattern from memory to the pulse amplifier and isolation circuits of individual thyristors in the inverter bridge. The method of controlling both voltage and frequency is discussed here.
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In this paper, two new dual-path based area efficient loop filtercircuits are proposed for Charge Pump Phase Locked Loop (CPPLL). The proposed circuits were designed in 0.25 CSM analog process with 1.8V supply. The proposed circuits achievedup to 85% savings in capacitor area. Simulations showed goodmatch of the new circuits with the conventional circuit. Theproposed circuits are particularly useful in applications thatdemand low die area.
Resumo:
A circuit capable of producing bipolar square pulses of voltages up to +or-400 V, employing an integrated circuit timer and two mercury wetted relays is described. The frequency of the pulses can be varied from a cycle min-1 to 2 kHz. A variable temperature sample chamber and the temperature control and measurement circuits are also described. The performance of the circuit is evaluated using samples of TGS and NaNO2.
Resumo:
A simple linear ramp control circuit, suitable for use with force-commutated thyrister circuits is discussed here. The circuit is based on only two IM 558 dual timer iCs, operating from a single 15 V supply. The reset terminals facilitate inhibition of the output of any stage. The use of this circuit in a thyristor chopper operating at 400 Hz 13 described.
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This paper recasts the multiple data path assignment problem solved by Torng and Wilhelm by the dynamic programming method [1] into a minimal covering problem following a switching theoretic approach. The concept of bus compatibility for the data transfers is used to obtain the various ways of interconnecting the circuit modules with the minimum number of buses that allow concurrent data transfers. These have been called the feasible solutions of the problem. The minimal cost solutions are obtained by assigning weights to the bus-compatible sets present in the feasible solutions. Minimization of the cost of the solution by increasing the number of buses is also discussed.
Resumo:
A simple ramp control firing circuit, suitable for use with fully controlled, line-commutated thyristor bridge circuits, is discussed here. This circuit uses very few components and generates the synchronized firing pulses in a simple way. It operates from a single 15 V Supply and has an inherent pulse inhibit facility. This circuit provides the synchronized firing pulses for both thyristors of the same limb in a bridge. To ensure reliability, wide triggering pulses are used, which are modulated to pass through the pulse transformers1 and demodulated before being fed to the thyristor gates. The use of throe such circuits only for a three-phase bridge is discussed.
Resumo:
The implementation of three-phase sinusoidal pulse-width-modulated inverter control strategy using microprocessor is discussed in this paper. To save CPU time, the DMA technique is used for transferring the switching pattern from memory to the pulse amplifier and isolation circuits of individual thyristors in the inverter bridge. The method of controlling both voltage and frequency is discussed here.
Resumo:
Negative impedance converters (NIC's) may be used to realize negative driving-point impedances. The effect of the nonideal characteristics of the operational amplifier such as finite frequencydependent gain and output impedance on the performance of the negative impedances is analyzed. Detailed equivalent circuits showing the additional positive or negative inductive impedances due to the nonideal characteristics are given for negative resistance and negative capacitance realizations, and their relative performances are compared. The experimental results confirm the validity of the equivalent circuits. The effect of the slew rate of the operational amplifier on the maximum signal-handling capability (SHC) of the negative impedances at high frequencies is studied. Practical design considerations for achieving wider bandwidth as well as improved SHC are discussed.
Resumo:
The recent trend towards minimizing the interconnections in large scale integration (LSI) circuits has led to intensive investigation in the development of ternary circuits and the improvement of their design. The ternary multiplexer is a convenient and useful logic module which can be used as a basic building block in the design of a ternary system. This paper discusses a systematic procedure for the simplification and realization of ternary functions using ternary multiplexers as building blocks. Both single level and multilevel multiplexing techniques are considered. The importance of the design procedure is highlighted by considering two specific applications, namely, the development of ternary adder/subtractor and TCD to ternary converter.
Resumo:
An efficient measurement technique for studying the effect of transient electromagnetic fields under controlled conditions has been described. Broad-band TEM fields with a rise-time of a few nanoseconds were generated using a stripline method. Theoretical results are obtained and experimental measurements which confirm these results are described. The work will form the basis for a study of the susceptibility of digital integrated circuits and their interconnections to transient electromagnetic fields.
Resumo:
The departures of the operational amplifiers (OA's) from the ideal performance and their effect on VCV's in the inverting and noninverting mode are discussed. It is found that for the same ideal gain, the bandwidths for the inverting and noninverting modes are different, the former being less. Complete equivalent circuits describing the frequency dependance of the input and output impedances for both modes are given. In particular, the output impedance is shown to be inductive for the frequencies of interest, and this is also confirmed by experimental results.
Resumo:
The deviation in the performance of active networks due to practical operational amplifiers (OA) is mainly because of the finite gain bandwidth productBand nonzero output resistanceR_0. The effect ofBandR_0on two OA impedances and single and multi-OA filters are discussed. In filters, the effect ofR_0is to add zeros to the transfer function often making it nonminimum phase. A simple method of analysis has been suggested for 3-OA biquad and coupled biquad circuits. A general method of noise minimization of the generalized impedance converter (GIC), while operating OA's within the prescribed voltage and current limits, is also discussed. The 3-OA biquadratic sections analyzed also exhibit noise behavior and signal handling capacity similar to the GIC. The GIC based structures are found to be better than other configurations both in biquadratic sections and direct realizations of higher order transfer functions.
Resumo:
We present a low power gas sensor system on CMOS platform consisting of micromachined polysilicon microheater, temperature controller circuit, resistance readout circuit and SnO2 transducer film. The design criteria for different building blocks of the system is elaborated The microheaters are optimized for temperature uniformity as well as static and dynamic response. The electrical equivalent model for the microheater is derived by extracting thermal and mechanical poles through extensive laser doppler vibrometer measurements. The temperature controller and readout circuit are realized on 130nm CMOS technology The temperature controller re-uses the heater as a temperature sensor and controls the duty cycle of the waveform driving the gate of the power MOSFET which supplies heater current. The readout circuit, with subthreshold operation of the MOSFETs, is based oil resistance to time period conversion followed by frequency to digital converter Subthreshold operatin of MOSFETs coupled with sub-ranging technique, achieves ultra low power consumption with more than five orders of magnitude dynamic range RF sputtered SnO2 film is optimized for its microstructure to achive high sensitivity to sense LPG gas.
Resumo:
Though silicon tunnel field effect transistor (TFET) has attracted attention for sub-60 mV/decade subthreshold swing and very small OFF current (IOFF), its practical application is questionable due to low ON current (ION) and complicated fabrication process steps. In this paper, a new n-type classical-MOSFET-alike tunnel FET architecture is proposed, which offers sub-60 mV/decade subthreshold swing along with a significant improvement in ION. The enhancement in ION is achieved by introducing a thin strained SiGe layer on top of the silicon source. Through 2D simulations it is observed that the device is nearly free from short channel effect (SCE) and its immunity towards drain induced barrier lowering (DIBL) increases with increasing germanium mole fraction. It is also found that the body bias does not change the drive current but after body current gets affected. An ION of View the MathML source and a minimum average subthreshold swing of 13 mV/decade is achieved for 100 nm channel length device with 1.2 V supply voltage and 0.7 Ge mole fraction, while maintaining the IOFF in fA range.