ac susceptibility and electrical resistivity in Fe80-xNixCr20 (21 \leq x \leq 30) alloys

ac susceptibility and electrical resistivity studies on polycrystalline Fe80-xNixCr20 (21 \leq x \leq 30) alloys, with x=21, 23, 26, and 30, between 4.2 and 80 K, are reported. A previous dc magnetization study indicated the presence of ferro-spin-glass mixed-phase behavior in x=23 and 26 alloys while the alloys with x=21 and 30 were found to be spin-glass and ferromagnetic, respectively. The present ac susceptibility results support the above picture. In the electrical resistivity study, a low-temperature minimum in the resistivity-temperature curve is observed in all the alloys except the ferromagnetic one.

Can Nano Silicon Be Made Optically Active?

There has been a lot of effort to make Silicon optically active. In this work we examine two methods of generating nanocrystals of Silicon from bulk fragments. This approach of ours allows us to play with the shape of the nanocrystals and therefore the degeneracy of the conduction band minimum. We go on to examine whether similar sized particles with different shapes have the same physical properties, and finally whether Silicon may be rendered optically active by this route. While we do find that similar sized particles with different shapes may have different band gaps, this route of modifying the degeneracy of the conduction band minimum makes nano Si slightly optically active.

Behaviour of ultrasonic velocities in amorphous Se90Ge10 and Se85Ge15 alloys near their glass transition

Precise measurements of 10 MHz frequency longitudinal and shear wave velocities are reported in amorphous SeGe alloys near their glass transition temperature T g . There is a sharp decrease of the velocities near T g , but the reduction in velocities appears smaller than expected.

Properties of the gold related acceptor level in silicon

The apparent thermal activation energy of 0.56 eV and the electron thermal capture cross section of 2.0 × 10-16 cm2 are measured for the gold related acceptor level in p+ nn+ silicon diodes by isothermal current transient and DLTS techniques. Using the emission and capture rate data and a degeneracy ratio of 2, the energy separation of the trap level from the conduction band is calculated and found to have the same temperature dependence as the band gap indicating that the acceptor level is pinned with respect to the valence band a t Ev + 0.637 eV.

Ultrasonic velocities and thermal expansion coefficients of amorphous Se80Te20 and Se90Te10 alloys near glass transitions

Precise measurements of the ultrasonic velocities and thermal expansivities of amorphous Se80Te20 and Se90Te10 alloys are reported near the glass transition. The samples are produced by liquid quenching. The longitudinal and transverse velocities are measured at 10 MHz frequency using the McSkimin pulse superposition technique. The thermal expansivities,agr, are measured using a three-terminal capacitance bridge. Theagr-values show a sharp maximum near the glass transition temperature,T g. The ultrasonic velocities also show a large temperature derivative, dV/dT nearT g. The data are discussed in terms of existing theories of the glass transition. The continuous change inagr shows that the glass transition is not a first-order transition, as suggested by some theories. The samples are found to be deformed by small loads nearT g. The ultrasonic velocities and dV/dT have contributions arising from this deformation.

A study on the reaction of silicon tetrahalides with phosphorus pentoxide and of alkali metal fluorosilicates with phosphorus pentoxide and sulphur trioxide

Silicon tetrahalides, SiX4 (X=F, Cl, Br) and the fluorosilicates of sodium and potassium react with phosphorus pentoxide above 300°C. The tetrahalides give rise to the corresponding phosphoryl halides and silica, while the fluorosilicates form the corresponding metal fluorophosphates and silicon tetrafluoride. The reaction of the fluorosilicates of sodium and potassium with sulphur trioxide occurs at room temperature to give rise to the corresponding metal fluorosulphates and silicon tetrafluoride.

Resistance Minimum in Dilute Magnetic Alloys in the Absence of Impurity Moments

A possible mechanism for the resistance minimum in dilute alloys in which the localized impurity states are non-magnetic is suggested. The fact is considered that what is essential to the Kondo-like behaviour is the interaction of the conduction electron spin s with the internal dynamical degrees of freedom of the impurity centre. The necessary internal dynamical degrees of freedom are provided by the dynamical Jahn-Teller effect associated with the degenerate 3d-orbitals of the transition-metal impurities interacting with the surrounding (octahedral) complex of the nearest-neighbour atoms. The fictitious spin I characterizing certain low-lying vibronic states of the system is shown to couple with the conduction electron spin s via s-d mixing and spin-orbit coupling, giving rise to a singular temperature-dependent exchange-like interaction. The resistivity so calculated is in fair agreement with the experimental results of Cape and Hake for Ti containing 0.2 at% of Fe.

An electron spectroscopic study of the surface oxidation of glassy and crystalline Cu-Zr alloys

Surface oxidation of three metglasses in the Cu-Zr system has been investigated by employing X-ray photoelectron spectroscopy and Auger electron spectroscopy with a view to comparing their oxidation behaviour with that of the corresponding crystalline states of the alloys. Surface oxidation of pure Zr metal has also been examined in detail using these techniques. Sub-oxides of Zr are formed during the initial stages of oxidation of Zr (at oxygen exposures <10L), while at higher exposures, ZrO2 is formed together with the highest possible sub-oxide which the authors designate as 'ZrO'. The relative proportion of 'ZrO' goes through a maximum in the range 25-50 L. Both the glassy and the crystalline states of the Cu-Zr alloys exhibit preferential oxidation of Zr. The glassy alloys exhibit a higher rate of oxidation at intermediate exposures compared with the crystalline states of the alloys; the extent of oxidation at higher oxygen exposures is, however, higher for crystalline alloys. Interatomic Auger transitions have been found in the Zr+O2 system as well as in Cu-Zr alloys.

Wrought aluminum-nickel alloys for high strength-high conductivity applications

Aluminum-Nickel alloys ranging from 0.06 pct to 6.1 pct (by wt) Ni have been developed for high strength-high conductivity applications. These alloys were produced by solidification in a permanent mold followed by homogenization, hot extrusion or hot rolling and cold drawing to wire form. This sequence of fabrication a) led to the production of fine fibrous dispersoids of NiAl3 as part of the Al-NiAl3 eutectic during the initial casting operation, b) permitted the retention of fine fibrous dispersiods of NiAl3 produced during casting without any significant coarsening during processing and c) led to uniform dispersion and general alignment of these fibrous dispersoids along a given direction in the product without any measurable fiber-matrix separation, extensive fiber-fragmentation or crack production in the matrix. These alloys can be processed to wire form as easily as aluminum and when processed by the above sequence, possess very attractive combination of high strength-high electrical conductivity. Tensile strengths range from 173 N/mm2 (at 0.6 pct Ni) to 241 N/mm2 (at 6.1 pct Ni) in combination with corresponding conductivity values between 62 pct IACS and 55.5 pct IACS. The wires also possess attractive yield strength; for instance, the 0.2 pct off-set strength of Al-6.1 pct Ni wire is 213 N/mm2. Using simple composite rules, the estimated strength and the conductivity of NiAl3 fibers were found to be 1380 N/mm2 and 18 pct IACS respectively, in these wires.

Microstructure and mechanical properties of unidirectionally solidified Al-Si-Ni ternary eutectic

Al-10.98 pct Si-4.9 pct Ni ternary eutectic alloy was unidirectionally solidified at growth rates from 1.39μm/sec to 6.95μm/sec. Binary Al-Ni and Al-Si eutectics prepared from the same purity metals were also solidified under similar conditions to characterize the growth conditions under the conditions of present study. NiAl3 phase appeared as fibers in the binary Al-Ni eutectic and silicon appeared as irregular plates in the binary Al-Si eutectic. However, in the ternary Al-Si-Ni eutectic alloy both NiAl3 and silicon phases appeared as irregular plates dispersed in α-Al phase, without any regular repctitive arrangement. The size and spacing of NiAl3 and Si platelets in cone shaped colonies decreased with an increase in the growth rate of the ternary eutectic. Examination of specimen quenched during unidirectional solidification indicated that the ternary eutectic grows with a non-planar interface with both Si and NiAl3 phases protruding into the liquid. It is concluded that it will be difficult to grow regular ternary eutectic structures even if only one phase has a high entropy of melting. The tensile strength and modulus of unidirectionally solidified Al-Si-Ni eutectic was lower than the chill cast alloys of the same composition, and decreased with a decrease in growth rate. Tensile modulus and strength of ternary Al-Si-Ni eutectic alloys was greater than binary Al-Si eutectic alloy under similar growth conditions, both in the chill cast and in unidirectionally solidified conditions.

Molybdenum trioxide (MoO3)/silicon photodiodes

Molybdenum trioxide (MoO3) has been deposited onto single-crystal p-type silicon by neutralized ion-beam sputter techniques. The results indicate that the diode behavior is a function of oxygen partial pressure during the reactive sputtering. Film thickness, deposition rate, index of refraction, resistivity, and integrated transmission have been measured under AM1 illumination. It appears that thin films of MoO3 could serve as an n-type transparent semiconductor for photovoltaic applications. Applied Physics Letters is copyrighted by The American Institute of Physics.

A model for doped-oxide-source diffusion with a chemical reaction at the silicon-silicon dioxide interface

A mathematical model for doped-oxide-source diffusion is proposed. In this model the concept of segregation of impurity at the silicon-silicon dioxide is used and also a constant of “rate limitation” is introduced through a chemical reaction at the interface.

Direct physical evidence for the back-transformation of stress-induced martensite in the vicinity of cracks in pseudoelastic NiTi shape memory alloys

Crack loading and crack extension in pseudoelastic binary NiTi shape memory alloy (SMA) miniature compact tension (CT) specimens with 50.7 at.% Ni (austenitic, pseudoelastic) was investigated using infrared (IR) thermography during in situ loading and unloading. IR thermographic measurements allow for the observation of heat effects associated with the stress-induced transformation of martensite from B2 to BIT during loading and the reverse transformation during unloading. The results are compared with optical images and discussed in terms of the crack growth mechanisms in pseudoelastic NiTi SMAs. Direct experimental evidence is presented which shows that crack growth occurs into a stress-induced martensitic microstructure, which immediately retransforms to austenite in the wake of the crack.