774 resultados para AK-3569
Resumo:
Scanning tunneling microscopy was used to study the surface nanostructure of the epitaxial film Nd2/3Sr1/3MnO3 that shows giant magnetoresistance. The surface morphology of the film consists of a number of overlapping platelets of about 30–35 Å diameter that grow at an angle of 35°–45° to the surface normal. The peak to peak height of the platelets are multiples of the c‐axis lattice parameter of 7.85 Å showing that the growth of the platelets takes place by the layer by layer addition of one formula unit. The mean surface roughness is about 10 Å. In the range of a few microns the film exhibits no defects or dislocations. The film is unstable in ambient atmosphere and tends to get covered by an adsorbate layer. Tip‐surface interactions cause the adsorbate to be dislodged exposing the surface nanostructure. The degradation of the film in real time when imaged in air was recorded. The adsorbates increase the surface roughness of the film.
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We have studied the isothermal, magnetic field (H‖c) dependent rf power P(H) dissipation (Hrf‖a) in the superconducting state of Bi2Sr2CaCu2O8 single crystals prior to and after irradiation with 250 MeV 107Ag17+ ions. In the pristine state, P(H) shows an initial decrease with increase in field, reaches a minimum at HM(T) and increases monotonically for H>HM(T). This behavior arises when the electromagnetic coupling between the pancake vortices in adjacent CuO layers becomes dominant on increasing the field and minimizes the distortions of the flux lines by confining the 2D vortices. In the post irradiated state, such an initial decrease and the minimum in P(H) is not observed but only a much reduced rf dissipation that monotonically increases with field from H = 0 onwards is seen. We attribute this difference to the strong enhancement of the tilt modulus C44 of the flux lines on irradiation when the pancake vortices in adjacent CuO bilayers are pinned along the track forming a well-stacked flux line in the field direction (‖c). We have also observed that the rf dissipation disappears at a certain temperature Tsf, at which the normal core of the flux line becomes commensurate with the columnar track diameter.
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We have studied the magnetic field (H∥c) dependent rf dissipation (Hrf∥a) in an as-grown Bi2Sr2CaCu2O8 single crystal prior to and after irradiation with 250 MeV 107Ag17+ ions. In a comparison of the responses from the as-grown crystal with an air-annealed crystal, features due to oxygen deficient regions acting as weak links in the former are identified. These features disappear immediately after irradiation of the as-grown crystal. We attribute such behavior to the displacement of oxygen from columnar tracks to deficient regions thus eliminating the weak links. Losses from the same irradiated as-grown crystal stored at 300 K for 60 days show that the features similar but not identical to those observed in the pristine state have reappeared implying that the displaced oxygen is in a metastable configuration in the deficient regions and hence is mobile due to thermal effects even at 300 K.
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Effect of particle size on the electron transport and magnetic properties of La0.7Ca0.3MnO3 has been investigated. While the ferromagnetic Tc, low field magnetic susceptibility, and insulator‐metal transition are markedly affected by the particle size, the maximum magnetoresistance exhibited by the samples near Tc is not sensitive to the particle size. However, the magnetoresistance at 4.2 K increases with decrease in particle size, suggesting a substantial contribution by the grain boundaries. Preliminary measurements on La0.7Sr0.3MnO3 samples of different particle sizes also corroborate the above conclusions.
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Electron paramagnetic resonance studies under ambient conditions of boron‐doped porous silicon show anisotropic Zeeman (g) and hyperfine (A) tensors, signaling localization of the charge carriers due to quantum confinement.
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We report the effect of surface treatments on the dynamic conductance curves (G=dI/dV‐V) of Au‐Bi2Sr2CaCu2O8+δ (single crystal) point contact junctions of variable junction conductances (100 mS≳G≳100 μS). We find that if the crystal surface is cleaved freshly just prior to making contacts, all irreproducible sharp multiple features often observed in tunneling data of Bi(2212) oxide superconductors disappear. If the cleaved crystal surfaces are left under ambient conditions for a few days and the tunneling experiments are repeated, these multiple features reappear. We also find that if the current in the junction is made to pass predominantly through the bulk (and not along the surface), gap features are sharper. The observed conductance curves are fitted to a modified model [G. E. Blonder et al., Phys. Rev. B 25, 4515 (1982)] and estimated gap values are Δ≂28 to 30 meV corresponding to the ratio 2Δ/kBTc ≂ 7.5 with lifetime broadening Γ/Δ≂0.2. We conclude that the sharp multiple features observed in Bi(2212) tunneling curves has no intrinsic origin in the bulk and they arise from the surface only.
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Software transactional memory (STM) has been proposed as a promising programming paradigm for shared memory multi-threaded programs as an alternative to conventional lock based synchronization primitives. Typical STM implementations employ a conflict detection scheme, which works with uniform access granularity, tracking shared data accesses either at word/cache line or at object level. It is well known that a single fixed access tracking granularity cannot meet the conflicting goals of reducing false conflicts without impacting concurrency adversely. A fine grained granularity while improving concurrency can have an adverse impact on performance due to lock aliasing, lock validation overheads, and additional cache pressure. On the other hand, a coarse grained granularity can impact performance due to reduced concurrency. Thus, in general, a fixed or uniform granularity access tracking (UGAT) scheme is application-unaware and rarely matches the access patterns of individual application or parts of an application, leading to sub-optimal performance for different parts of the application(s). In order to mitigate the disadvantages associated with UGAT scheme, we propose a Variable Granularity Access Tracking (VGAT) scheme in this paper. We propose a compiler based approach wherein the compiler uses inter-procedural whole program static analysis to select the access tracking granularity for different shared data structures of the application based on the application's data access pattern. We describe our prototype VGAT scheme, using TL2 as our STM implementation. Our experimental results reveal that VGAT-STM scheme can improve the application performance of STAMP benchmarks from 1.87% to up to 21.2%.
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In this paper we report a systematic study of low-frequency 1/fα resistance fluctuation in a metal film at different stages of electromigration. The resistance fluctuation (noise) measurement was carried out in presence of a dc electromigration stressing current. We observe that in addition to the increase in the spectral power SV(f), the frequency dependence of the spectral power changes as the electromigration process progresses and the exponent α starts to change from 1 to higher value closer to 1.5. We interpret this change in α as arising due to an additional contribution to the spectral power with a 1/f3/2 component, which starts to contribute as the electromigration process progresses. This additional component SV(f) ∼ 1/f3/2 has been suggested to originate from long range diffusion that would accompany any electromigration process. The experimental observation finds support in a model simulation, where we also find that the enhancement of noise during electromigration stressing is accompanied by a change in spectral power frequency dependence.
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We present a systematic study to explore the effect of important process variables on the composition and structure of niobium nitride thin films synthesized by Reactive Pulsed Laser Deposition (RPLD) technique through ablation of high purity niobium target in the presence of low pressure nitrogen gas. Secondary Ion Mass Spectrometry has been used in a unique way to study and fix gas pressure, substrate temperature and laser fluence, in order to obtain optimized conditions for one variable in single experimental run. The x-ray diffraction and electron microscopic characterization have been complemented by proton elastic backscattering spectroscopy and x-ray photoelectron spectroscopy to understand the incorporation of oxygen and associated non-stoichiometry in the metal to nitrogen ratio. The present study demonstrates that RPLD can be used for obtaining thin film architectures using non-equilibrium processing. Finally the optimized NbN thin films were characterized for their hardness using nano-indentation technique and found to be similar to 30 GPa at the deposition pressure of 8 Pa. (C) 2011 Elsevier B.V. All rights reserved.
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Colossal electroresistance and current induced resistivity switching have been measured in the ferromagnetic insulating (FMI) state of single crystal manganite La0.82Ca0.18MnO3. The sample has a Curie transition temperature TC = 165 K and the FMI state is realized for temperatures T<100 K. The electroresistance (ER), arising from a strong nonlinear resistivity, attains a large value ( ≈ 100%) in the FMI state. However, this is accompanied by a collapse of the magnetoresistance (MR) to a small value even in magnetic field (H) of 10 T. This demonstrates that the mechanisms that give rise to ER and MR are effectively decoupled.
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Combination of femtosecond Kerr, two photon absorption, and impulsive stimulated Raman scattering (ISRS) experiments have been carried out to investigate the effect of pulse energy and crystal temperature on the generation of coherent polaritons and phonons in 〈110〉 cut ZnTe single crystals of three different resistivities. We demonstrate that the effect of two photon induced free carriers on the creation of both the polaritons and phonons is largest at 4 K where the free carrier lifetime is enhanced. The temperature dependant ISRS on high and low purity ZnTe crystals allows us to unambiguously assign the phonon mode at 3.5 THz to the longitudinal acoustic mode at X-point in the Brillouin zone, LA(X).
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Simple algorithms have been developed to generate pairs of minterms forming a given 2-sum and thereby to test 2-asummability of switching functions. The 2-asummability testing procedure can be easily implemented on the computer. Since 2-asummability is a necessary and sufficient condition for a switching function of upto eight variables to be linearly separable (LS), it can be used for testing LS switching functions of upto eight variables.
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An analytical analysis of ferroresonance with possible cases of its occurrence in series-and shunt-compensated systems is presented. A term `percentage unstable zoneÿ is defined to compare the jump severity of different nonlinearities. A direct analytical method has been shown to yield complete information. An attempt has been made to find all four critical points: jump-from and jump-to points of ferroresonance jump phenomena. The systems considered for analysis are typical 500 kV transmission systems of various lengths.
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There are several ways of storing electrical energy in chemical and physical forms and retrieving it on demand, and ultracapacitors are one among them. This article presents the taxonomy of ultracapacitor and describes various types of rechargeable-battery electrodes that can be used to realize the hybrid ultracapacitors in conjunction with a high-surface-area-graphitic-carbon electrode. While the electrical energy is stored in a battery electrode in chemical form, it is stored in physical form as charge in the electrical double-layer formed between the electrolyte and the high-surface-area-carbon electrodes. This article discusses various types of hybrid ultracapacitors along with the possible applications.
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Homogenization of partial differential equations is relatively a new area and has tremendous applications in various branches of engineering sciences like: material science,porous media, study of vibrations of thin structures, composite materials to name a few. Though the material scientists and others had reasonable idea about the homogenization process, it was lacking a good mathematical theory till early seventies. The first proper mathematical procedure was developed in the seventies and later in the last 30 years or so it has flourished in various ways both application wise and mathematically. This is not a full survey article and on the other hand we will not be concentrating on a specialized problem. Indeed, we do indicate certain specialized problems of our interest without much details and that is not the main theme of the article. I plan to give an introductory presentation with the aim of catering to a wider audience. We go through few examples to understand homogenization procedure in a general perspective together with applications. We also present various mathematical techniques available and if possible some details about some of the techniques. A possible definition of homogenization would be that it is a process of understanding a heterogeneous (in-homogeneous) media, where the heterogeneties are at the microscopic level, like in composite materials, by a homogeneous media. In other words, one would like to obtain a homogeneous description of a highly oscillating in-homogeneous media. We also present other generalizations to non linear problems, porous media and so on. Finally, we will like to see a closely related issue of optimal bounds which itself is an independent area of research.