Electron paramagnetic resonance study of porous silicon
| Data(s) |
27/04/1992
|
|---|---|
| Resumo |
Electron paramagnetic resonance studies under ambient conditions of boron‐doped porous silicon show anisotropic Zeeman (g) and hyperfine (A) tensors, signaling localization of the charge carriers due to quantum confinement. |
| Formato |
application/pdf |
| Identificador |
http://eprints.iisc.ernet.in/42908/1/Electron_paramagnetic.pdf Bhat, SV and Victor, D and Muthu, S and Sood, AK and Jayaram, K (1992) Electron paramagnetic resonance study of porous silicon. In: Applied Physics Letters, 60 (17). pp. 2116-2117. |
| Publicador |
American Institute of Physics |
| Relação |
http://apl.aip.org/resource/1/applab/v60/i17/p2116_s1 http://eprints.iisc.ernet.in/42908/ |
| Palavras-Chave | #Physics |
| Tipo |
Journal Article PeerReviewed |
