Study of band offsets at the Cu2SnS3/In2O3: Sn interface using x-ray photoelectron spectroscopy

Cu2SnS3 thins films were deposited onto In2O3: Sn coated soda lime glass substrates by spin coating technique. The films have been structurally characterized using x-ray Diffraction (XRD) and Atomic Force Microscopy (AFM). The morphology of the films was studied using Field Emission Scanning Electron Microscopy (FESEM). The optical properties of the films were determined using UV-vis-NIR spectrophotometer. The electrical properties were measured using Hall effect measurements. The energy band offsets at the Cu2SnS3/In2O3: Sn interface were calculated using x-ray photoelectron spectroscopy (XPS). The valence band offset was found to be -3.4 +/- 0.24 eV. From the valence band offset value, the conduction band offset is calculated to be -1.95 +/- 0.34 eV. The energy band alignment indicates a type-II misaligned heterostructure formation.

Evidence for double valence fluctuation in metallic oxides of lead

The possible role of double valence fluctuation in both lead and oxide ions with reference to metallization in oxides of lead is examined by x-ray-photoemission spectroscopy, ultraviolet-photoemission spectroscopy (UPS), and 207Pb NMR studies. The double valence fluctuations may be viewed as Pb4++2O2-⇄Pb2+O22-. While the insulating oxides PbO, Pb3O4, and Sr2PbO4 show a single oxide ion, O2- characterized by O(1s) at 529.7 eV, the insulating peroxide BaO2 is characterized by the ion O22- with a single O(1s) at 533 eV. The metallic PbO2, BaPbO3, BaBiPbO3, and SrPbO3 showed the occurrence of both O2- and O22- ions. The valence band in these compounds has also been studied by UPS, and clear evidence for the coexistence of O2- and O22- is seen in PbO2. A simultaneous study of 207Pb NMR suggests that the Pb ion could also exist in mixed-valence states. Qualitative arguments are presented to rationalize the existence of such mixed valences of the anion in metal oxides in general and their role in superconductivity.

Study of band offsets in InN/Ge heterojunctions

InN layers were directly grown on Ge substrate by plasma-assisted molecular beam epitaxy (PAMBE). The valence band offset (VBO) of wurtzite InN/Ge heterojunction is determined by X-ray photoemission spectroscopy (XPS). The valence band of Ge is found to be 0.18 +/- 0.04 eV above that of InN and a type-II heterojunction with a conduction band offset (CBO) of similar to 0.16 eV is found. The accurate determination of the VBO and CBO is important for the design of InN/Ge based electronic devices. (C) 2011 Elsevier B.A. All rights reserved.

Evidences for ambient oxidation of indium nitride quantum dots

Investigations were carried out on the ambient condition oxidation of self-assembled, fairly uniform indium nitride (InN) quantum dots (QDs) fabricated on p-Si substrates. Incorporation of oxygen in to the outer shell of the QDs was confirmed by the results of transmission electron microscopy (TEM), X-ray photoemission spectroscopy (XPS). As a consequence, a weak emission at high energy (similar to 1.03?eV) along with a free excitonic emission (0.8?eV) was observed in the photoluminescence spectrum. The present results confirm the incorporation of oxygen into the lattice of the outer shell of InN QDs, affecting their emission properties. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Valence band offset at GaN/beta-Si3N4 and beta-Si3N4/Si(111) heterojunctions formed by plasma-assisted molecular beam epitaxy

Ultra thin films of pure beta-Si3N4 (0001) were grown on Si (111) surface by exposing the surface to radio- frequency nitrogen plasma with a high content of nitrogen atoms. Using beta-Si3N4 layer as a buffer layer, GaN epilayers were grown on Si (111) substrate by plasma-assisted molecular beam epitaxy. The valence band offset (VBO) of GaN/beta-Si3N4/ Si heterojunctions is determined by X-ray photoemission spectroscopy. The VBO at the beta-Si3N4 /Si interface was determined by valence-band photoelectron spectra to be 1.84 eV. The valence band of GaN is found to be 0.41 +/- 0.05 eV below that of beta-Si3N4 and a type-II heterojunction. The conduction band offset was deduced to be similar to 2.36 eV, and a change of the interface dipole of 1.29 eV was observed for GaN/ beta-Si3N4 interface formation. (c) 2011 Elsevier B.V. All rights reserved.

Valence band electronic structure of Nd1-xYxMnO3 using X-ray absorption, photoemission and GGA plus U calculations

The electronic structures of Nd1-xYxMnO3 (x=0-0.5) were studied using X-ray absorption near-edge structure (XANES) at the Mn L-3,L-2- and O K-edge along with valence-band photoemission spectroscopy (VB-PES). The systematic increase in white-line intensity of the Mn L-3,L-2-edge with doping, suggests a decrease in the occupancy of Mn 3d orbitals. The O K-edge XANES shows a depletion of unoccupied states above the Fermi energy. The changes in the O K-edge spectra due to doping reflects an increase in the Jahn-Teller distortion. The VB-PES shows broadening of the features associated with Mn 3d and O 2p hybridized states and the shift of these features to a slightly higher binding energy in agreement with our GGA + U calculations. The system shows a net shift of the occupied and unoccupied states away from the Fermi energy with doping. The shift in theoretical site-projected density of states of x=0.5 composition with respect to x=0 suggest a subtle change from a charge transfer to Mott-Hubbard type insulator. (C) 2013 Elsevier B.V. All rights reserved.

X-ray spectroscopic study of chromium, nickel, and molybdenum compounds

Chemical shifts in the K-absorption edges, AE, of a series of chromium, nickel, and molybdenum compounds have been investigated. The AE values in a given series vary in the same direction as the metal-core-level binding energies obtained from X-ray photoelectron spectroscopy. The AI3 values are related to the effective atomic charge of the metal by a parabolic relation. In the case of molybdenum compounds, the chemical shifts of the K, emission lines vary in the same manner as M.

X-ray photoelectron spectroscopic studies of surface oxidation of metallic glasses

Surface oxidation of the metallic glass Fe40Ni38Mo4B18 has been studied by X-ray photoelectron spectroscopy. The oxidation behaviour of the metallic glass has been compared with a crystallized sample of the same composition. A similar study has been carried out on the metallic glass Ni76Si12B12,which shows the importance of chemical composition in determining the surface oxidation behaviour of these alloys.

X-ray photoelectron spectroscopic studies on Se/As2S3 and Sb/As2S3 nanomultilayered film

Photoinduced diffusion in Se/As2S3 and Sb/As2S3 nanomultilayered thin films are studied by X-ray photoelectron spectroscopy (XPS). The XPS measurements show the atomic movements during photoinduced diffusion in Se/As2S3 and Sb/As2S3 nanomultilayered film. The analysis of experimental data describes the nature of light induced changes indifferent structural units. (C) 2009 Elsevier B.V. All rights reserved.

Critical test for Altshuler-Aronov theory: Evolution of the density of states singularity in double perovskite Sr2FeMoO6 with controlled disorder

With high-resolution photoemission spectroscopy measurements, the density of states (DOS) near the Fermi level (E-F) of double perovskite Sr2FeMoO6 having different degrees of Fe/Mo antisite disorder has been investigated with varying temperature. The DOS near E-F showed a systematic depletion with increasing degree of disorder, and recovered with increasing temperature. Altshuler-Aronov (AA) theory of disordered metals well explains the dependences of the experimental results. Scaling analysis of the spectra provides experimental indication for the functional form of the AA DOS singularity.

A microspectroscopic study of the electronic homogeneity of ordered and disordered Sr2FeMoO6

Disordered Sr2FeMoO6 shows a drastic reduction in saturation magnetization compared to highly ordered samples, moreover magnetization as a function of the temperature for different disordered samples shows qualitatively different behaviours. We investigate the origin of such diversity by performing spatially resolved photoemission spectroscopy on various disordered samples. Our results establish that extensive electronic inhomogeneity, arising most probably from an underlying chemical inhomogeneity in disordered samples, is responsible for the observed magnetic inhomogeneity. It is further pointed out that these inhomogeneities are connected with composition fluctuations of the type Sr2Fe1+xMo1-xO6 with Fe-rich (x > 0) and Mo-rich (x < 0) regions.

Lack of Cu3+, Pb4+, and Bi5+ ions in metallic and superconducting oxides

With a view to understand the oxidation states of metal ions involved in oxide superconductors, oxidation behavior of Cu, Pb, and Bi metals have been studiedi employing x-ray-photoemission and ultraviolet-photoemission spectroscopy. Pb and Bi have distinct 6p (0 to 4 eV) and 6s (7.5 to 10 eV) bands and upon oxidation, only the 6p electrons are ionized forming PbO and Bi2O3 with the simultaneous development of the O2-(2p) band (3 to 7 eV). We show that the 6s band of metals lies below the O2-(2p) band, and hence 6s electrons cannot be ionized to form Pb4+ and Bi4+ as expected in PbO2, BaPbO3, BaBiO3, and BaPb0.75Bi0.25O3. Instead these oxides are stabilized with lower valent O22- along with O2- ions with metals remaining in +2 and +3 states. Similarly, it is shown that the Cu2+(3d) band overlaps with the O2-(2p) band in the YBa2Cu3O6.95 completely and the excess oxygen can be stabilized through lower valent oxide ions instead of Cu3+.

Photoemission study of the high-Tc superconductor Bi1.8Pb0.4Sr2Ca2.2Cu3O10

Ultraviolet and X-ray photoemission spectroscopic (UPS and XPS) studies to characterize the electronic structure of bismuth cuprate superconductor with nominal composition of Bi1.8Pb0.4Sr2Ca2.2Cu3O10 have been carried out. The data clearly shows the metallic emission at the Fermi level (EF). The shoulder (-1.2 eV) near the EF is attributed to the Cu-O derived states. Cu satellite structures observed both in the UPS and XPS show the strongly correlated nature of the Cu 3d electrons. Core level shifts indicate that 3+ and 4+ are the main oxidation of Bi and Pb, respectively. The Pb core lines show two components indicating their inequivalent sites. Core level O 1s spectrum is deconvoluted to show the presence of structurally non-equivalent oxygen sites.

Cu 2p core-level photoemission spectrum of Sr2CuO3

We measure the Cu 2p X-ray photoemission spectrum (XPS) of Sr2CuO3 and analyze it by means of exact diagonalization calculations for (CunO3n)(4n-) clusters. In Sr2CuO3, the intensity ratio of the 3d(y) satellite to the 3d(10)(L) under bar main line is 0.35-0.4, which is evidently smaller than that in the other high-T-c related cuprates. We ascribe it as the smaller charge-transfer energy between the Cu 3d and O 2p. The origin of the broad main-line of Sr2CuO3 is also discussed.

Electronic structure of early 3d-transition-metal oxides by analysis of the 2p core-level photoemission spectra

The electronic structures of a wide range of early transition-metal (TM) compounds, including Ti and V oxides with metal valences ranging from 2+ to 5+ and formal d-electron numbers ranging from 0 to 2, have been investigated by a configuration-interaction cluster model analysis of the core-level metal 2p x-ray photoemission spectra (XPS). Inelastic energy-loss backgrounds calculated from experimentally measured electron-energy-loss spectra (EELS) were subtracted from the XPS spectra to remove extrinsic loss features. Parameter values deduced for the charge-transfer energy Delta and the d-d Coulomb repulsion energy U are shown to continue the systematic trends established previously for the late TM compounds, giving support to a charge-transfer mechanism for the satellite structures. The early TM compounds are characterized by a large metal d-ligand p hybridization energy, resulting in strong covalency in these compounds. Values for Delta and U suggest that many early TM compounds should be reclassified as intermediate between the charge-transfer regime and the Mott-Hubbard regime.