253 resultados para POROUS SILICON LUMINESCENCE


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This paper deals with the pulsatile blood flow in the lung alveolar sheets by idealizing each of them as a channel covered by porous media. As the blood flow in the lung is of low Reynolds number, a creeping flow is assumed in the channel. The analytical and numerical results for the velocity and pressure distribution in the porous medium are presented. The effect of an imposed slip condition is also studied. Comparisons with the corresponding results for the steady-state case are made at the end.

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The limits of stability and extinction of a laminar diffusion flame have been experimentally studied in a two-dimensional laminar boundary layer over a porous flat plate through which n-pentane vapour was uniformly injected. The stability and extinction boundaries are mapped on a plot of free stream oxidant velocity versus fuel injection velocity. Effects of free stream temperature and of dilution of fuel and oxidant on these boundaries have been examined. The results show that there exists a limiting oxidant flux beyond which the diffusion flame cannot be sustained. This limiting oxidant flux has been found to depend_on the free stream oxygen concentration, fuel concentration and injection'velocity of the fuel.

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Aluminum-silicon alloy pins were slid against steel disks under nominally dry condition at a speed of 0.6 m s-1. Each pin was slid at a constant load for 5 min, the load being increased in suitable steps from 2 to 65 N. The results show the wear to increase almost monotonically with load, to be sensitive to the presence of silicon in the alloy, and to be insensitive to actual silicon content. The monotonic nature of wear rate-load characteristic suggests that one dominant wear mechanism prevails over the load range studied. Morphological studies of the pin surface and the debris support this contention and point to delamination as being the dominant mode of wear.

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There has been a lot of effort to make Silicon optically active. In this work we examine two methods of generating nanocrystals of Silicon from bulk fragments. This approach of ours allows us to play with the shape of the nanocrystals and therefore the degeneracy of the conduction band minimum. We go on to examine whether similar sized particles with different shapes have the same physical properties, and finally whether Silicon may be rendered optically active by this route. While we do find that similar sized particles with different shapes may have different band gaps, this route of modifying the degeneracy of the conduction band minimum makes nano Si slightly optically active.

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The apparent thermal activation energy of 0.56 eV and the electron thermal capture cross section of 2.0 × 10-16 cm2 are measured for the gold related acceptor level in p+ nn+ silicon diodes by isothermal current transient and DLTS techniques. Using the emission and capture rate data and a degeneracy ratio of 2, the energy separation of the trap level from the conduction band is calculated and found to have the same temperature dependence as the band gap indicating that the acceptor level is pinned with respect to the valence band a t Ev + 0.637 eV.

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Silicon tetrahalides, SiX4 (X=F, Cl, Br) and the fluorosilicates of sodium and potassium react with phosphorus pentoxide above 300°C. The tetrahalides give rise to the corresponding phosphoryl halides and silica, while the fluorosilicates form the corresponding metal fluorophosphates and silicon tetrafluoride. The reaction of the fluorosilicates of sodium and potassium with sulphur trioxide occurs at room temperature to give rise to the corresponding metal fluorosulphates and silicon tetrafluoride.

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Molybdenum trioxide (MoO3) has been deposited onto single-crystal p-type silicon by neutralized ion-beam sputter techniques. The results indicate that the diode behavior is a function of oxygen partial pressure during the reactive sputtering. Film thickness, deposition rate, index of refraction, resistivity, and integrated transmission have been measured under AM1 illumination. It appears that thin films of MoO3 could serve as an n-type transparent semiconductor for photovoltaic applications. Applied Physics Letters is copyrighted by The American Institute of Physics.

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A mathematical model for doped-oxide-source diffusion is proposed. In this model the concept of segregation of impurity at the silicon-silicon dioxide is used and also a constant of “rate limitation” is introduced through a chemical reaction at the interface.

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Abstract is not available.

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Carbon particles synthesized by acetylene pyrolysis in a porous graphite reactor have been investigated. The intimate chemical and physical structures of the particles were probed by proton nuclear magnetic resonance spectroscopy, infrared Fourier transform spectroscopy and X-ray diffraction. The analysis points towards a chemical structure composed of soluble low-mass aromatics surrounding small insoluble larger aromatic islands bridged by aliphatic groups. The diffraction profile indicates that the particles are mostly amorphous with small crystalline domains of not, vert, similar6.5 Å composed of a few stacked graphene layers. The properties of these particles are compared with these obtained with other types of production methods such as laser pyrolysis and combustion flames. The results are briefly discussed in the context of the evolution of infrared interstellar emitters. Possible uses of the reactor are proposed.

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Silicon particles standing proud on aluminium-silicon alloy surfaces provide protection in tribology. Permanent sinking of such particles into the matrix under load can be deleterious. The mechanical response of the alloy to nano-indentation of single silicon particles embedded in the matrix is explored. A nominal critical pressure required to plastically deform the matrix to permanently embed the particle is determined experimentally. Within a framework suggested by two-dimensional models of plastic response to indentation, a probable correlation is established between the normal mean pressure required to cause permanent sinking of silicon particles and a factor which relates the relevant particle dimensions.

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Subsurface geophysical surveys were carried out using a large range of methods in an unconfined sandstone aquifer in semiarid south-western Niger for improving both the conceptual model of water flow through the unsaturated zone and the parameterization of numerical a groundwater model of the aquifer. Methods included: electromagnetic mapping, electrical resistivity tomography (ERT), resistivity logging, time domain electromagnetic sounding (TDEM), and magnetic resonance sounding (MRS). Analyses of electrical conductivities, complemented by geochemical measurements, allowed us to identify preferential pathways for infiltration and drainage beneath gullies and alluvial fans. The mean water content estimated by MRS (13%) was used for computing the regional groundwater recharge from long-term change in the water table. The ranges in permeability and water content obtained with MRS allowed a reduction of the degree of freedom of aquifer parameters used in groundwater modelling.