Study of switching characteristics and thermal noise in ferroelectric crystals both in the pure and radiation damaged state

The phase transition in gamma-irradiated triglycine sulphate (TGS) has been investigated by using a method based on the measurement of thermal noise. The results of a study of the polarization switching characteristics of gamma irradiated TGS and sodium nitrite (NaNO2) have also been presented. The effect of irradiation on the phase transition and the switching processes has been discussed.

Autonomous Line Scanning for SPC Telephone Switching Systems

An Autonomous Line Scanning Unit (ALSU) for completely autonomous detection of call originations in the SPC Telephone Switching System is described. Through its own memories, ALSU maintains an up-to-date record of subscribers' statuses, detects call originations, performs 'hit timing check' and informs the Switching System of the identity of calling subscribers. The ALSU needs minimum interaction with the Central Processor, resulting in increased call handling capacity

Switching in copper oxide

This paper presents the results of an investigation conducted on the switching behavior of copper oxide. The filamentary nature of the current and also the formation of a copper channel have been observed to be associated with the process of switching. The experiments and the analysis carried out by the authors show that the formation of copper channel is due only to a secondary process and is not responsible for the actual switching of the device to the low-voltage mode. The switching, as is clear from the analysis, seems to be the result of a purely electrothermal process. The effect of the dimensions of the device on the V-I characteristics is also discussed. It has further been shown that it is possible to prevent the formation of copper channel to obtain a monoshot type of switching transition.

A Note on Minimal Reed-Muller Canonical Forms of Switching Functions

A nonexhaustive procedure for obtaining minimal Reed-Muller canonical (RMC) forms of switching functions is presented. This procedure is a modification of a procedure presented earlier in the literature and enables derivation of an upper bound on the number of RMC forms to be derived to choose a minimal one. It is shown that the task of obtaining minimal RMC forms is simplified in the case of symmetric functions and self-dual functions.

The composition dependence of electrical switching behavior of Ge7Se93-xSbx glasses

Bulk Ge7Se93-xSbx (21 <= x <= 32) glasses are prepared by melt quenching method and electrical switching studies have been undertaken on these samples to elucidate the type of switching and the composition and thickness dependence of switching voltages. On the basis of the compressibility and atomic radii, it has been previously observed that Se-based glasses exhibit memory switching behavior. However, the present results indicate that Ge7Se93-xSbx glasses exhibit threshold type electrical switching with high switching voltages. Further, these samples are found to show fluctuations in the current-voltage (I-V) characteristics. The observed threshold behavior of Ge7Se93-xSbx glasses has been understood on the basis of larger atomic radii and lesser compressibilities of Sb and Ge. Further. the high switching voltages and fluctuations in the I-V characteristics of Ge-Se-Sb samples can be attributed to the high resistance of the samples and the difference in thermal conductivities of different structural units constituting the local structure of these glasses. The switching voltages of Ge7Se93-xSbx glasses have been found to decrease with the increase in the Sb concentration. The observed composition dependence of switching voltages has been understood on the basis of higher metallicity of the Sb additive and also in the light of the Chemically Ordered Network (CON) model. Further, the thickness dependence of switching voltages has been studied to reassert the mechanism of switching.

High field electrical switching behavior of Ge10Se90-xTlx glasses

Electrical Switching Studies on bulk Ge10Se90-xTlx ( 15 <= x <= 34) glasses have been undertaken to examine the type of switching, composition and thickness dependence of switching voltages. Unlike Ge-Se-Tl thin films which exhibit memory switching, the bulk Ge10Se90-xTlx glasses are found to exhibit threshold type switching with fluctuations seen in their current-voltage (I-V) characteristics. Further, it is observed that the switching voltages (V-T) of Ge10Se90-xTlx glasses decrease with the increase in the Tl concentration. An effort has been made to understand the observed composition dependence on the basis of nature of bonding of Tl atoms and a decrease in the chemical disorder with composition. In addition. the network connectivity and metallicity factors also contribute for the observed decrease in the switching voltages of Ge10Se90-xTlx glasses with Tl addition. It is also interesting to note that the composition dependence of switching voltages of Ge10Se90-xTlx glasses exhibit a small Cusp around the composition x = 22. which is understood on the basis of a thermally reversing window in this system in the composition range 22 <= x <= 30. The thickness dependence of switching voltages has been found to provide an insight about the type of switching mechanism involved in these samples. (C) 2009 Elsevier B.V. All rights reserved

Effect of indium doping on the electrical switching behaviour of Ge-Te glasses

Bulk Ge15Te85-xInx (1 <= x <= 11) series of glasses have been found to exhibit a threshold switching behaviour for an input current of 2 mA. An initial decrease is seen in the switching voltages (V-T) with the addition of indium, which is due to the higher metallicity of indium. An increase is seen in V-T above 3 at.% of indium, which proceeds until 8 at.%, with a change in slope (lower to higher) seen around 7 at.%. Beyond x = 8, a reversal in trend is exhibited in the variation of V-T, with a well-defined minimum around x = 9 at.%. Based on the composition dependence of V-T, it is proposed that Ge15Te85-xInx glasses exhibit an extended rigidity percolation threshold. The composition, x = 3, at which the V-T starts to increase and the composition, x = 7, at which a slope change is exhibited correspond to the onset and completion, respectively, of the extended stiffness transition. Thermal studies and photoconductivity e85-xInx glasses. In addition, the minimum seen in V-T at x = 9 is associated with the chemical threshold (CT) of this glassy system.

Electrical switching and in situ Raman scattering studies on the set-reset processes in Ge-Te-Si glass

Bulk Ge15Te83Si2 glass has been found to exhibit memory-type switching for 1 mA current with a threshold electric field of 7.3 kV/cm. The electrical set and reset processes have been achieved with triangular and rectangular pulses, respectively, of 1 mA amplitude. In situ Raman scattering studies indicate that the degree of disorder in Ge15Te83Si2 glass is reduced from off to set state. The local structure of the sample under reset condition is similar to that in the off state. The Raman results are consistent with the switching results which indicate that the Ge15Te83Si2 glass can be set and reset easily. (C) 2007 American Institute of Physics.

Low correlation sequences over AM-PSK and QAM alphabets

A construction for a family of sequences over the 8-ary AM-PSK constellation that has maximum nontrivial correlation magnitude bounded as theta(max) less than or similar to root N is presented here. The famfly is asymptotically optimal with respect to the Welch bound on maximum magnitude of correlation. The 8-ary AM-PSK constellation is a subset of the 16-QAM constellation. We also construct two families of sequences over 16-QAM with theta(max) less than or similar to root 2 root N. These families are constructed by interleaving sets of sequences. A construction for a famBy of low-correlation sequences over QAM alphabet of size 2(2m) is presented with maximum nontrivial normalized correlation parameter bounded above by less than or similar to a root N, where N is the period of the sequences in the family and where a ranges from 1.61 in the case of 16-QAM modulation to 2.76 for large m. When used in a CDMA setting, the family will permit each user to modulate the code sequence with 2m bits of data. Interestingly, the construction permits users on the reverse link of the CDMA channel to communicate using varying data rates by switching between sequence famflies; associated to different values of the parameter m. Other features of the sequence families are improved Euclidean distance between different data symbols in comparison with PSK signaling and compatibility of the QAM sequence families with sequences belonging to the large quaternary sequence families {S(p)}.

Electrical switching and thermal studies on Ge22Te78-xIx chalcohalide glasses: The effect of iodine on network-topology

Investigations on the electrical switching behavior and thermal studies using Alternating Differential Scanning Calorimetry have been undertaken on bulk, melt-quenched Ge22Te78-,Is (3 <= x <= 10) chalcohalide glasses. All the glasses studied have been found to exhibit memory-type electrical switching. The threshold voltages of Ge22Te78-I-x(x) glasses have been found to increase with the addition of iodine and the composition dependence of threshold voltages of Ge22Te78-xIx glasses exhibits a cusp at 5 at.% of iodine. Also, the variation with composition of the glass transition temperature (Tg) of Ge22Te78-I-x(x) glasses, exhibits a broad hump around this composition. Based on the present results, the composition x = 5 has been identified as the inverse rigidity percolation threshold at which Ge22Te78-I-x(x) glassy system exhibits a change from a stressed rigid amorphous solid to a flexible polymeric glass. Further, a sharp minimum is seen in the composition dependence of non-reversing enthalpy (Delta H-nr) of Ge22Te78-I-x(x) glasses at x = 5, which is suggestive of a thermally reversing window at this composition. (C) 2007 Elsevier Ltd. All rights reserved.

Electrical switching behavior of bulk Si15Te85-xSbx chalcogenide glasses - A study of compositional dependence

Studies on the electrical switching behavior of melt quenched bulk Si15Te85-xSbx glasses have been undertaken in the composition range (1 <= x <= 10), in order to understand the effect of Sb addition on the electrical switching behavior of Si15Te85-x base glass. It has been observed that all the Si15Te85-xSbx glasses studied exhibit a smooth memory type switching. Further, the switching voltages are found to decrease almost linearly with Sb content, which indicates that the metallicity of the dopant plays a dominant role in this system compared to network connectivity/rigidity. The thickness dependence of switching voltage (V-th) indicates a clear thermal origin for the switching mechanism. The temperature variation of switching voltages reveals that the Si15Te85-xSbx glasses studied have a moderate thermal stability. (C) 2009 Elsevier B.V. All rights reserved.

Quadratic Nonlinearity of One- and Two-Electron Oxidized Metalloporphyrins and Their Switching in Solution

We report the quadratic nonlinearity of one- and two-electron oxidation products of the first series of transition metal complexes of meso-tetraphenylporphyrin (TPP). Among many MTPP complexes, only CuTPP and ZnTPP show reversible oxidation/reduction cycles as seen from cyclic voltammetry experiments. While centrosymmetric neutral metalloporphyrins have zero first hyperpolarizability, β, as expected, the cation radicals and dications of CuTPP and ZnTPP have very high β values. The one- and two-electron oxidation of the MTPPs leads to symmetry-breaking of the metal−porphyrin core, resulting in a large β value that is perhaps aided in part by contributions from the two-photon resonance enhancement. The calculated static first hyperpolarizabilities, β0, which are evaluated in the framework of density functional theory by a coupled perturbed Hartree−Fock method, support the experimental trend. The switching of optical nonlinearity has been achieved between the neutral and the one-electron oxidation products but not between the one- and the two-electron oxidation products since dications that are electrochemically reversible are unstable due to the formation of stable isoporphyrins in the presence of nucleophiles such as halides.

A rate-one full-diversity low-complexity space-time-frequency block code (STFBC) for 4-Tx MIMO-OFDM

It is known that by employing space-time-frequency codes (STFCs) to frequency selective MIMO-OFDM systems, all the three diversity viz spatial, temporal and multipath can be exploited. There exists space-time-frequency block codes (STFBCs) designed using orthogonal designs with constellation precoder to get full diversity (Z.Liu, Y.Xin and G.Giannakis IEEE Trans. Signal Processing, Oct. 2002). Since orthogonal designs of rate one exists only for two transmit antennas, for more than two transmit antennas STFBCs of rate-one and full-diversity cannot be constructed using orthogonal designs. This paper presents a STFBC scheme of rate one for four transmit antennas designed using quasi-orthogonal designs along with co-ordinate interleaved orthogonal designs (Zafar Ali Khan and B. Sundar Rajan Proc: ISIT 2002). Conditions on the signal sets that give full-diversity are identified. Simulation results are presented to show the superiority of our codes over the existing ones.

Space-Vector-Based Hybrid Pulsewidth Modulation Techniques for Reduced Harmonic Distortion and Switching Loss

Novel switching sequences can be employed in spacevector-based pulsewidth modulation (PWM) of voltage source inverters. Differentswitching sequences are evaluated and compared in terms of inverter switching loss. A hybrid PWM technique named minimum switching loss PWM is proposed, which reduces the inverter switching loss compared to conventional space vector PWM (CSVPWM) and discontinuous PWM techniques at a given average switching frequency. Further, four space-vector-based hybrid PWM techniques are proposed that reduce line current distortion as well as switching loss in motor drives, compared to CSVPWM. Theoretical and experimental results are presented.

Support vector machine approach for the switching transient peak overvoltages during line energization

At the time of restoration transmission line switching is one of the major causes, which creates transient overvoltages. Though detailed Electro Magnetic Transient studies are carried out extensively for the planning and design of transmission systems, such studies are not common in a day-today operation of power systems. However it is important for the operator to ensure during restoration of supply that peak overvoltages resulting from the switching operations are well within safe limits. This paper presents a support vector machine approach to classify the various cases of line energization in the category of safe or unsafe based upon the peak value of overvoltage at the receiving end of line. Operator can define the threshold value of voltage to assign the data pattern in either of the class. For illustration of proposed approach the power system used for switching transient peak overvoltages tests is a 400 kV equivalent system of an Indian southern gri