Effect of indium doping on the electrical switching behaviour of Ge-Te glasses


Autoria(s): Manikandan, N; Asokan, S
Data(s)

01/11/2007

Resumo

Bulk Ge15Te85-xInx (1 <= x <= 11) series of glasses have been found to exhibit a threshold switching behaviour for an input current of 2 mA. An initial decrease is seen in the switching voltages (V-T) with the addition of indium, which is due to the higher metallicity of indium. An increase is seen in V-T above 3 at.% of indium, which proceeds until 8 at.%, with a change in slope (lower to higher) seen around 7 at.%. Beyond x = 8, a reversal in trend is exhibited in the variation of V-T, with a well-defined minimum around x = 9 at.%. Based on the composition dependence of V-T, it is proposed that Ge15Te85-xInx glasses exhibit an extended rigidity percolation threshold. The composition, x = 3, at which the V-T starts to increase and the composition, x = 7, at which a slope change is exhibited correspond to the onset and completion, respectively, of the extended stiffness transition. Thermal studies and photoconductivity e85-xInx glasses. In addition, the minimum seen in V-T at x = 9 is associated with the chemical threshold (CT) of this glassy system.

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/26207/1/884525_.pdf

Manikandan, N and Asokan, S (2007) Effect of indium doping on the electrical switching behaviour of Ge-Te glasses. In: Philosophical Magazine, 87 (32). 5109 -5116.

Publicador

Taylor and Francis Group

Relação

http://www.informaworld.com/smpp/content~db=all~content=a782934619

http://eprints.iisc.ernet.in/26207/

Palavras-Chave #Instrumentation and Applied Physics (Formally ISU)
Tipo

Journal Article

PeerReviewed