Behaviour of acceptor states in semiconducting BaTiO3 and SrTiO3

The semiconductivity inMTiO3 (M=Ba, Sr) in the temperature range of practical applications is greatly influenced by the electronic charge redistribution among the acceptor states, arising from the frozen cation vacancies as well as the transition metal ion impurities. The conductivity measurements and defect chemistry investigations above 800 K indicate that the predominant lattice defects areM− and oxygen vacancies. There is dominantp-type conduction at higherP O 2 values in acceptor doped materials at high temperatures. However, they are insulating solids around room temperature due to the redistribution of electrons between the neutral, singly-or doubly-ionised acceptor states. Results fromepr and resistivity measurements show that the above charge redistribution is dependent on crystal structure changes. Hence the electron or hole loss by the acceptor states is influenced by the soft modes which also accounts for the differences in electrical properties of BaTiO3 and SrTiO3. The results are also useful in explaining the positive temperature coefficient in resistance and some photo-electrochemcial properties of these solids.

Electrical transport in layered crystalline semiconductors GeS doped with Ag, P impurities at high pressure

A study of the transport properties of layered crystalline semiconductors GeS (undoped and doped with Ag, P impurity) under quasihydrostatic pressure using Bridgman anvil system is made for the first time. Pressure-induced effects in undoped crystals reveal initial rise in resistivity followed by two broad peaks at higher pressures. Silver doping induces only minor changes in the behaviour except removing the second peak. Phosphorous impurity is found to have drastic effect on the transport properties. Temperature dependence of the resistivity exhibits two activation energies having opposite pressure coefficients. Results are discussed in the light of intrinsic features of the layered semiconductors.

Effect of magnetic and electrical fields on dendritic freezing of aqueous solutions of sodium chloride

Aqueous solutions of sodium chloride were solidified under the influence of magnetic and electrical fields using two different freezing systems. In the droplet system, small droplets of the solution are introduced in an organic liquid column at −20°C which acts as the heat sink. In the unidirectional freezing system the solutions are poured into a tygon tube mounted on a copper chill, maintained at −70°C, from which the freezing initiates. Application of magnetic fields caused an increase in the spacing and promoted side branching of primary ice dendrites in the droplet freezing system, but had no measurable effect on the dendrites formed in the unidirectional freezing system. The range of electric fields applied in this investigation had no measurable effect on the dendritic structure. Possible interactions between external magnetic and electrical fields have been reviewed and it is suggested that the selective effect of magnetic fields on dendrite spacings in a droplet system could be due to a change in the nucleation behaviour of the solution in the presence of a magnetic field.

Electrical transport in Bi doped n-type amorphous semiconductors (GeSe3.5)100-xBix at high pressure

Electrical transport in Bi doped amorphous semiconductors (GeSe3.5)100-xBix (x=0,4,10) is studied in a Bridgman anvil system up to a pressure of 90 kbar and down to 77 K. A pressure induced continuous transition from an amorphous semiconductor to a metal-like solid is observed in GeSe3.5. The addition of Bi disturbs significantly the behaviour of resistivity with pressure. The results are discussed in the light of molecular cluster model for GeySe1-y proposed by Phillips.

Synthesis of liquid crystalline benzothiazole base derivatives: A study of their optical and electrical properties

Two new donor-acceptor type liquid crystalline semiconductors based on benzothiazole have been synthesized. Their structural, photophysical and electronic properties were investigated using X-ray diffraction, atomic force microscopy, cyclic voltammetry, UV-Vis, photoluminescence, and Raman spectroscopy. The liquid crystalline behaviour of the molecules was thoroughly examined by differential scanning calorimetry (DSC) and optical polarizing microscope. The DSC and thermogravimetric analysis (TGA) show that these materials posses excellent thermal stability and have decomposition temperatures in excess of 300 degrees C. Beyond 160 degrees C both molecules show a smectic A liquid crystalline phase that exists till about 240 degrees C. Field-effect transistors were fabricated by vacuum evaporating the semiconductor layer using standard bottom gate/top contact geometry. The devices exhibit p-channel behaviour with hole mobilities of 10(-2) cm(2)/Vs. (C) 2009 Elsevier B.V. All rights reserved.

Tool wear monitoring using ant behaviour

In this paper we show the applicability of Ant Colony Optimisation (ACO) techniques for pattern classification problem that arises in tool wear monitoring. In an earlier study, artificial neural networks and genetic programming have been successfully applied to tool wear monitoring problem. ACO is a recent addition to evolutionary computation technique that has gained attention for its ability to extract the underlying data relationships and express them in form of simple rules. Rules are extracted for data classification using training set of data points. These rules are then applied to set of data in the testing/validation set to obtain the classification accuracy. A major attraction in ACO based classification is the possibility of obtaining an expert system like rules that can be directly applied subsequently by the user in his/her application. The classification accuracy obtained in ACO based approach is as good as obtained in other biologically inspired techniques.

Behaviour of autonomous mobile agents using linear cyclic pursuit laws

In this paper, the behaviour of a group of autonomous mobile agents under cyclic pursuit is studied. Cyclic pursuit is a simple distributed control law, in which the agent i pursues agent i + 1 modulo n.. The equations of motion are linear, with no kinematic constraints on motion. Behaviourally, the agents are identical, but may have different controller gains. We generalize existing results in the literature and show that by selecting these gains, the behavior of the agents can be controlled. They can be made to converge at a point or be directed to move in a straight line. The invariance of the point of convergence with the sequence of pursuit is also shown.

Synthesis, magnetic and electrical properties of Fe-containing SiO2 nanocomposite

Nanocrystalline Fe powders were synthesized by transmetallation reaction and embedded in silica to form Fe-SiO2 nanocomposite. Thermomagnetic study of the as-prepared Fe sample indicates the presence of Fe3O4 and Fe particles. Oxidation studies of Fe and Fe-SiO2 show an increased thermal stability of Fe-SiO2 nanocomposite over pure Fe. The Fe-SiO2 shows an enhanced oxidation temperature (i.e., 780 K) and a maximum saturation magnetization value of (135 emu/g) with 64 wt.% of Fe content in silica. Electrical and dielectric behaviour of the Fe-SiO2 nanocomposite has been investigated as a function of temperature and frequency. Low frequency ac conductivity and dielectric constants were found to be influenced by desorptions of chemisorbed moisture. High saturation magnetization, thermal stability, frequency-dependent conductivity and low power loss make Fe-silica a promising material for high frequency applications. (C) 2010 Elsevier B.V. All rights reserved.

Electrical switching in benzidine-DDQ under pressure

The effect of pressure on non-ohmic conduction and electrical switching in the charge transfer complex benzidine-DDQ has been studied up to a pressure of 7·66 GPa at a temperature of 300K. Pulsed I-V measurements reveal heating contribution to non-ohmicity and switching. At high electric fields (∼ 3 × 103 V/cm), the sample switches from high resistance OFF state of several kiloohms to low resistance ON state of several ohms. Temperature dependence of conductivity of ON state show semiconducting behaviour with very low activation energy.

Critical phenomena in electrical resistance of binary liquids: A study of the frequency dependence

The electrical resistance is measured in two binary liquid systems CS2 + CH3NO2 and n-C7H16 + CH3OH in the critical region as a function of frequency from 10 Hz to 100 kHz. The critical exponent b ≈ 0.35 in the singularity of dR/dT α (T - Tc)−b near Tc has no appreciable dependence upon the frequency. Thus any contribution from dielectric dispersion to the critical resistivity is not appreciable. The universal behaviour of the dR/dT anomaly does not seem to be followed in binary liquid systems.

Electrical-Resistivity Studies on GE-SE Glasses at High-Pressures and Low-Temperatures

High pressure electrical resistivity measurements were carried out on GexSe100-x (0 less-than-or-equal-to x less-than-or-equal-to 40) glasses at ambient and low temperatures using the Bridgman anvil system. All the melt quenched glasses show a discontinuous glassy semiconductor to crystalline metal transition at high pressures. The high pressure phases of Ge-Se samples do not correspond to any of the equilibrium phases of the system. Additionally, the variation of transition pressure (P(T)), ambient resistivity (rho0) and the activation energy (DELTAE(t)) with composition, exhibit a change in behaviour at x = 20 and 33. The unusual variations observed in these glasses are discussed in the light of chemical and percolation thresholds occurring in the glassy system.

Numerical and experimental study of the thermal behaviour of coining and upsetting processes

A numerical simulation technique has been employed to study the thermal behavior of hot-forging type forming processes. Experiments on the coining and upsetting of an aluminum billet were conducted to validate the numerical predictions. Typical forming conditions for both the coining and upsetting processes were then studied in detail. an electrical analogy scheme was used to determine the thermal contact resistance. This scheme can conviniently provide the interface characteristics for typical processing conditions, which normally involve high pressures and temperatures. A single forging cycle was first considered, and then a batch of twenty-five forgings was studied. Each forging cycle includes the billet mounting, ascent, loading, dwelling, unloading, descent, and billet removal stages. The temperature distribution in the first forging to be formed is found to be significantly different from that at the end of the batch. In industry, forging is essentially a batch operation. The influence of forming speed and reduction on thermal characteristics was investigated also. The variations that can occur in the process design by considering differences in temperature characteristics are discussed also.

Crystal structure, thermal expansion and electrical conductivity of Nd0.7Sr0.3Fe1-xCoxO3 (0 <= x <= 0.8)

The crystal structure, thermal expansion and electrical conductivity of the solid solution Nd0.7Sr0.3Fe1-xCoxO3 for 0 less than or equal to x less than or equal to 0.8 were investigated. All compositions had the GdFeO3-type orthorhombic perovskite structure. The lattice parameters were determined at room temperature by X-ray powder diffraction (XRPD). The pseudo-cubic lattice constant decreased continuously with x. The average linear thermal expansion coefficient (TEC) in the temperature range from 573 to 973 K was found to increase with x. The thermal expansion curves for all values of x displayed rapid increase in slope at high temperatures. The electrical conductivity increased with x for the entire temperature range of measurement. The calculated activation energy values indicate that electrical conduction takes place primarily by the small polaron hopping mechanism. The charge compensation for the divalent ion on the A-site is provided by the formation of Fe4+ ions on the B-site (in preference to Co4+ ions) and vacancies on the oxygen sublattice for low values of x. The large increase in the conductivity with x in the range from 0.6 to 0.8 is attributed to the substitution of Fe4+ ions by Co4+ ions. The Fe site has a lower small polaron site energy than Co and hence behaves like a carrier trap, thereby drastically reducing the conductivity. The non-linear behaviour in the dependence of log sigmaT with reciprocal temperature can be attributed to the generation of additional charge carriers with increasing temperature by the charge disproportionation of Co3+ ions. (C) 2002 Elsevier Science B.V. All rights reserved.

Structure and electrical properties of sputtered lithium cobaltite thin films

LixCoOy films with x < 1 and y > 2 have been prepared by radio-frequency (rf) sputtering from high temperature (HT) LiCoO2 targets. Their structures have been examined with high resolution electron microscopy. Conductivities have been studied between 77 and 400 K. The electrochemical behaviour of film electrodes have been investigated with Li/LiClO4-PC/LixCoOy cells. The annealed films consist of nanocrystalline domains with amorphous boundaries. Electrical conductivities appear to arise from variable-range hopping (VRH) of holes. The films form good electrodes with operating potentials between 2.7 and 3.8 V. The observations have been discussed on the basis of a tentative and heuristic molecular orbital based energy band diagram. (C) 2002 Published by Elsevier Science Ltd.