Non-uniform slot injection (suction) or wall enthalpy into a steady nonsimilar compressible laminar boundary layer

Steady two-dimensional and axisymmetric compressible nonsimilar laminar boundary-layer flows with non-uniform slot injection (or suction) and non-uniform wall enthalpy have been studied from the starting point of the streamwise co-ordinate to the exact point of separation. The effect of different free stream Mach number has also been considered. The finite discontinuities arising at the leading and trailing edges of the slot for the uniform slot injection (suction) or wall enthalpy are removed by choosing appropriate non-uniform slot injection (suction) or wall enthalpy. The difficulties arising at the starting point of the streamwise co-ordinate, at the edges of the slot and at the point of separation are overcome by applying the method of quasilinear implicit finite difference scheme with an appropriate selection of finer step size along the streamwise direction. It is observed that the non-uniform slot injection moves the point of separation downstream but the non-uniform slot suction has the reverse effect. The increase of Mach number shifts the point of separation upstream due to the adverse pressure gradient. The increase of total enthalpy at the wall causes the separation to occur earlier while cooling delays it. The non-uniform total enthalpy at the wall (i.e., the cooling or heating of the wall in a slot) along the streamwise co-ordinate has very little effect on the skin friction and thus on the point of separation.

Si, Si-Ge and the new heterostructure world

Semiconductor heterostructures based on AlAs/GaAs and other III-V compounds have been the focus of active research for some time now. Ih the last decade, a new heterostructure material, the strained Si/SiGe system, has emerged. This heterojunction technology can potentially be integrated into the current VLSI environment with large-scale impact in the growing microelectronics market. Si/SiGe heterojunction bipolar transistors with cut-off frequencies exceeding 100 GHz and other electronic and optical devices with superior properties compared to all-Si technology have been demonstrated in laboratories worldwide.

The dynamics of the Ramdas layer

A little more than sixty years ago, the late L. A. Ramdas discovered a curious atmospheric phenomenon which had not been satisfactorily explained till recently. The phenomenon is the observation of a temperature minimum some 20-50 cm above bare soil on calm, clear nights. The first reports of these observations were treated with much scepticism, as the prevailing view was that the nocturnal temperature minimum always occurs at ground. In the present address the history of work on the lifted temperature minimum is traced and a new explanation is offered. It is emphasized that in this as well as many other phenomena, it is important to account for surfaces that are not perfectly black radiatively, i.e. those whose emissivity is not unity.

Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE

One of the scientific challenges of growing InN quantum dots (QDs), using Molecular beam epitaxy (MBE), is to understand the fundamental processes that control the morphology and distribution of QDs. A systematic manipulation of the morphology, optical emission, and structural properties of InN/Si (111) QDs is demonstrated by changing the growth kinetics parameters such as flux rate and growth time. Due to the large lattice mismatch, between InN and Si (similar to 8%), the dots formed from the Strannski-Krastanow (S-K) growth mode are dislocated. Despite the variations in strain (residual) and the shape, both the dot size and pair separation distribution show the scaling behavior. We observed that the distribution of dot sizes, for samples grown under varying conditions, follow the scaling function.

Diurnal variation of atmospheric CO2 concentration and delta C-13 in an urban atmosphere during winter-role of the Nocturnal Boundary Layer

The paper presents the importance of the Nocturnal Boundary Layer in driving the diurnal variability of the atmospheric CO2 mixing ratio and the carbon isotope ratio at ground level from an urban station in India. Our observations are the first of their kind from this region. The atmospheric CO2 mixing ratio and the carbon isotopic ratio were measured for both the morning (05:30-07:30 IST) and afternoon time (16:00-18:00 IST) air samples at 5 m above ground level in Bangalore city, Karnataka State (12 degrees 58' N, 77 degrees 38' E, masl = 920 m) for a 10 day period during the winter of 2008. We observed a change of similar to 7% the in CO2 mixing ratio between the morning and afternoon time air samples. A stable isotope analysis of CO2 from morning samples showed a depletion in the carbon isotope ratio by similar to 2 parts per thousand compared to the afternoon samples. Along with the ground-based measurement of air samples, data of radiosonde measurements were also obtained from the Indian Meteorological Department to identify the vertical atmospheric structure at different time in a day. We proposed the presence or absence of the NBL as a controlling factor for the observed variability in the mixing ratio as well as its isotopic composition. Here we used the Keeling model approach to find out the carbon isotope ratio for the local sources. The local sources have further been characterized as anthropogenic and biological respiration (in %) using a two-component mixing model. We also used a vertical mixing model based on the concept of the mixing of isotopically depleted (carbon isotope) ``polluted air'' (PA) with isotopically enriched ``free atmospheric air'' (FA) above. Using this modeling approach, the contribution of FA at ground level is being estimated for both the morning and afternoon time air samples.

A transfer matrix approach for evaluation of the response of a multi-layer infinite plate to a two-dimensional pressure excitation

A 6 X 6 transfer matrix is presented to evaluate the response of a multi-layer infinite plate to a given two-dimensional pressure excitation on one of its faces or, alternatively, to evaluate the acoustic pressure distribution excited by the normal velocity components of the radiating surfaces. It is shown that the present transfer matrix is a general case embodying the transfer matrices of normal excitation and one-dimensional pressure excitation due to an oblique incident wave. It is also shown that the present transfer matrix obeys the necessary checks to categorize the physically symmetric multi-layer plate as dynamically symmetric. Expressions are derived to obtain the wave propagation parameters, such as the transmission, absorption and reflection coefficients, in terms of the elements of the transfer matrix presented. Numerical results for transmission loss and reflection coefficients of a two-layer configuration are presented to illustrate the effect of angles of incidence, layer characteristics and ambient media.

Metastable phase formation during mechanical alloying of Al-Ge and Al-Si alloys

In this paper we report the mechanical alloying behaviour of elemental aluminium with diamond cubic elements Ge and Si. A metastable crystalline phase with rhombohedral crystal structure forms in Al-70 Ge-30 and Al-60 Ge-40 alloy compositions. The phase always coexists with elemental constituents and decomposes over a broad temperature range. No such metastable phase could be observed in the Al-Si system. We also report X-ray diffractometry and differential scanning calorimetry results suggestive of amorphization. Finally a comparison was made of the present result with that obtained in rapid solidification.

Microstructure control and wear of Al2O3-SiC-(Al,Si) composites made by melt oxidation

Ceramic matrix composites of Al2O3-SiC-(Al,Si) have been fabricated by directed melt oxidation of aluminum alloys into SiC particulate preforms. The proportions of Al2O3, alloy, and porosity in the composite can be controlled by proper selection of SLC particle size and the processing temperature. The wear resistance of composites was evaluated in pin-on-disk experiments against a hard steel substrate. Minimum wear rate comparable to conventional ceramics such as ZTA is recorded for the composition containing the highest fraction of alloy, owing to the development of a thin and adherent tribofilm with a low coefficient of friction.

Microwave-assisted selective deoxygenation of layer- and chain-containing oxides

Very rapid (within 5 min), selective, single-step deoxygenation of layer- and chain-containing oxides, MoO3, CrO3, V2O5, alpha-VOPO4 . 2H(2)O and Ag6Mo10O33 has been accomplished using graphitic carbon in a microwave-assisted reaction. The products were found to be MoO2, Cr2O3, VO2, VPO4 and a mixture of (Ag + MoO2), respectively. Products were characterised by X-ray diffraction (XRD), differential scanning calorimetry (DSC), IR and electron paramagnetic resonance (EPR) spectroscopies. Although conventional methods of preparing these materials are tedious, the present method is simple, fast and yields very homogeneous products of good crystallinity. Our results reveal that while layer- and chain-containing oxides undergo rapid microwave-assisted carbothermal reduction, the non-layered materials do not. The high structural selectivity of these reactions is suggestive of the topochemical nature of the fast reduction process.

Passivation of surface and bulk defects in p-GaSb by hydrogenated amorphous silicon treatment

Passivation of point and extended defects in GaSb has been observed as a result of hydrogenated amorphous silicon (a-Si:H) treatment by the glow discharge technique. Cathodoluminescence (CL) images recorded at various depths in the samples clearly show passivation of defects on the surface as well as in the bulk region. The passivation of various recombination centers in the bulk is attributed to the formation of hydrogen-impurity complexes by diffusion of hydrogen ions from the plasma a-Si:H acts as a protective cap layer and prevents surface degradation which is usually encountered by bare exposure to hydrogen plasma. An enhancement in luminescence intensity up to 20 times is seen due to the passivation of nonradiative recombination centers. The passivation efficiency is found to improve with an increase in a-Si:H deposition temperature. The relative passivation efficiency of donors and acceptors by hydrogen in undoped and Te-compensated p-GaSb has been evaluated by CL and by the temperature dependence of photoluminescence intensities. Most notably, effective passivation of minority dopants in tellurium compensated p-GaSb is evidenced for the first time. (C) 1996 American Institute of Physics.

Quasicrystals, crystals and multiple twins in rapidly solidified Al-Cr-Si, Al-Mn-Si and Al-Mn-Cr-Si alloys

The coexistence of quasicrystals and rational approximant structures (RAS) has been observed in melt-spun Al80Cr14Si6, Al80Mn14Si6 and Al75Mn10Cr5Si10 alloys. The presence of a b.c.c. alpha-AlMnSi phase in Al-Mn-Si and alpha-AlMnSi(Cr) phase in Al-Mn-Cr-Si has been seen. A multiple twinning around an irrational axis of the RAS has been reported in an aggregate of fine size cubic crystallites in all three alloys. Selected area diffraction patterns show that the crystalline aggregate symmetry is linked to the icosahedral point group symmetry (m35). Various ways of expressing the twin relationship in the cubic crystalline aggregates have been discussed. The thermal stability of the icosahedral phase at high temperatures reveals that the icosahedral phase in Al-Mn-Si and Al-Mn-Cr-Si alloys transforms to alpha-AlMnSi at temperatures of 690 and 670 K, respectively. In Al-Cr-Si alloy, heating to a high temperature (615 K) leads to the transformation of the icosahedral phase into a new metastable phase having an ordered cubic structure equivalent to alpha-AlMnSi. The occurrence of multiple twinning leading to icosahedral symmetry in the as-spun Al-Cr-Si alloy is presumably due to this metastable phase. Copyright (C) 1996 Acta Metallurgica Inc.