Excitation- and power-dependent photoluminescence from oxidized Ge

Wafer/microcrystallites of oxidized Ge with holes/nanoholes synthesized by thermal oxidation strategy from Ge wafer/microcrystallites can convert one wavelength to another. Both oxidized Ge wafer and microcrystallites shows excitation- and power-dependent luminescence. Red-shift is observed as the excitation wavelength is increased, while blue-shift is observed as power density is increased. Over all, blue-green-yellow-orange luminescence is observed depending on the excitation wavelength and the morphology of oxidized Ge. The various defects level associated with germanium-oxygen vacancies in GeO2 and Ge/GeO2 interface are responsible for the excitation-dependent luminescence. Being a light-conversion material, oxidized Ge is expected to find potential applications in solid-state lighting, photovoltaic devices and photocatalysis. (C) 2013 Elsevier B.V. All rights reserved.

Temperature-Dependent Magnetic and EPR Studies of Bulk and Nanoparticles of Bi0.1Ca0.9MnO3

We report temperature-dependent magnetic and electron paramagnetic resonance (EPR) properties of bulk and nanoparticle samples of Bi0.1Ca0.9MnO3 (BCMO). The nanoparticles of BCMO (dia similar to 50 nm) were prepared by the standard sol-gel technique and bulk samples by solid-state reaction method. We have investigated the magnetic ordering in the two samples by carrying out temperature-dependent magnetic and EPR studies and compared their properties. According to earlier reports, antiferromagnetic and ferromagnetic orders coexist in the bulk sample of Bi0.1Ca0.9MnO3. Our magnetization and EPR results show the existence of ferromagnetism in the bulk sample which is present in the nanosample as well but with somewhat weakened strength with the size reduction.

Effect of catchment characteristics on the relationship between past discharge and the power law recession coefficient

This study concerns the relationship between the power law recession coefficient k (in - dQ/dt = kQ(alpha), Q being discharge at the basin outlet) and past average discharge Q(N) (where N is the temporal distance from the center of the selected time span in the past to the recession peak), which serves as a proxy for past storage state of the basin. The strength of the k-Q(N) relationship is characterized by the coefficient of determination R-N(2), which is expected to indicate the basin's ability to hold water for N days. The main objective of this study is to examine how R-N(2) value of a basin is related with its physical characteristics. For this purpose, we use streamflow data from 358 basins in the United States and selected 18 physical parameters for each basin. First, we transform the physical parameters into mutually independent principal components. Then we employ multiple linear regression method to construct a model of R-N(2) in terms of the principal components. Furthermore, we employ step-wise multiple linear regression method to identify the dominant catchment characteristics that influence R-N(2) and their directions of influence. Our results indicate that R-N(2) is appreciably related to catchment characteristics. Particularly, it is noteworthy that the coefficient of determination of the relationship between R-N(2) and the catchment characteristics is 0.643 for N = 45. We found that topographical characteristics of a basin are the most dominant factors in controlling the value of R-N(2). Our results may be suggesting that it is possible to tell about the water holding capacity of a basin by just knowing about a few of its physical characteristics. (C) 2015 Elsevier B.V. All rights reserved.

Impedance spectroscopic studies on microwave synthesized NaPO3-V2O5 glasses containing SO42- ions

Impedance spectroscopic studies on modified phospho-vanadate glasses containing SO42- ions have been carried out over wide range of frequency. Modulated DSC studies suggest that the addition of alkali salt makes the glass less rigid and more fragile. The frequency dependent impedance data has been used to calculate d.c conductivity and activation energies. These values are comparable with the other ionic liquids. The conductivity and relaxation phenomenon was rationalized using universal a.c conductivity power law and modulus formalism. The activation energies for relaxation mechanism was also determined using imaginary parts of electrical modulus peaks which were close to those of the d.c conductivity implying the involvement of similar energy barriers in both the processes. Kohlrausch-William-Watts (KWW) stretched exponent beta, is temperature insensitive and power law (s) exponent is temperature dependent. The enhanced conductivity in these glasses is attributed to the depolymerised structure in which migration of Na+ ions proceeds in an expanded network comprising SO42- ions in the interstitials. The effect of structure on activation energy is well supported by abinitio DFT computations. (C) 2015 Elsevier B.V. All rights reserved.

Simulations of impinging droplets with surfactant-dependent dynamic contact angle

An arbitrary Lagrangian-Eulerian (ALE) finite element scheme for computations of soluble surfactant droplet impingement on a horizontal surface is presented. The numerical scheme solves the time-dependent Navier-Stokes equations for the fluid flow, scalar convection-diffusion equation for the surfactant transport in the bulk phase, and simultaneously, surface evolution equations for the surfactants on the free surface and on the liquid-solid interface. The effects of surfactants on the flow dynamics are included into the model through the surface tension and surfactant-dependent dynamic contact angle. In particular, the dynamic contact angle (theta(d)) of the droplet is defined as a function of the surfactant concentration at the contact line and the equilibrium contact angle (theta(0)(e)) of the clean surface using the nonlinear equation of state for surface tension. Further, the surface forces are included into the model as surface divergence of the surface stress tensor that allows to incorporate the Marangoni effects without calculating the surface gradient of the surfactant concentration on the free surface. In addition to a mesh convergence study and validation of the numerical results with experiments, the effects of adsorption and desorption surfactant coefficients on the flow dynamics in wetting, partially wetting and non-wetting droplets are studied in detail. It is observed that the effects of surfactants are more in wetting droplets than in the non-wetting droplets. Further, the presence of surfactants at the contact line reduces the equilibrium contact angle further when theta(0)(e) is less than 90 degrees, and increases it further when theta(0)(e) is greater than 90 degrees. Nevertheless, the presence of surfactants has no effect on the contact angle when theta(0)(e) = 90 degrees. The numerical study clearly demonstrates that the surfactant-dependent contact angle has to be considered, in addition to the Marangoni effect, in order to study the flow dynamics and the equilibrium states of surfactant droplet impingement accurately. The proposed numerical scheme guarantees the conservation of fluid mass and of the surfactant mass accurately. (C) 2015 Elsevier Inc. All rights reserved.

Partial rotation of the isopropyl group in the solid state: single-crystal-to-single-crystal phase transformation in a carvacrol derivative

A hitherto unseen rotation of the isopropyl group in the solid state, predicted to be forbidden based on theoretical investigations, is reported. This C-C rotation observed during the temperature dependent single-crystal-to-single-crystal transformation is attributed to the concomitant changes in molecular structure and intermolecular packing.

Percolative switching in transition metal dichalcogenide field-effect transistors at room temperature

We have addressed the microscopic transport mechanism at the switching or `on-off' transition in transition metal dichalcogenide (TMDC) field-effect transistors (FETs), which has been a controversial topic in TMDC electronics, especially at room temperature. With simultaneous measurement of channel conductivity and its slow time-dependent fluctuation (or noise) in ultrathin WSe2 and MoS2 FETs on insulating SiO2 substrates where noise arises from McWhorter-type carrier number fluctuations, we establish that the switching in conventional backgated TMDC FETs is a classical percolation transition in a medium of inhomogeneous carrier density distribution. From the experimentally observed exponents in the scaling of noise magnitude with conductivity, we observe unambiguous signatures of percolation in a random resistor network, particularly, in WSe2 FETs close to switching, which crosses over to continuum percolation at a higher doping level. We demonstrate a powerful experimental probe to the microscopic nature of near-threshold electrical transport in TMDC FETs, irrespective of the material detail, device geometry, or carrier mobility, which can be extended to other classes of 2D material-based devices as well.

Spin-glass state in nanoparticulate (La0.7Sr0.3MnO3)(1-x) (BaTiO3)(x) solid solutions: Experimental and density-functional studies

We report the transition from robust ferromagnetism to a spin- glass state in nanoparticulate La0.7Sr0.3MnO3 through solid solution with BaTiO3. The field- and temperature-dependent magnetization and the frequency-dependent ac magnetic susceptibility measurements strongly indicate the existence of a spin- glass state in the system, which is further confirmed from memory effect measurements. The breaking of long-range ordering into short-range magnetic domains is further investigated using density-functional calculations. We show that Ti ions remain magnetically inactive due to insufficient electron leakage from La0.7Sr0.3MnO3 to the otherwise unoccupied Ti-d states. This results in the absence of a Mn-Ti-Mn spin exchange interaction and hence the breaking of the long-range ordering. Total-energy calculations suggest that the segregation of nonmagnetic Ti ions leads to the formation of short-range ferromagnetic Mn domains.

Organization dependent collective magnetic properties of secondary nanostructures with differential spatial ordering and magnetic easy axis orientation

Achieving control on the formation of different organization states of magnetic nanoparticles is crucial to harness their organization dependent physical properties in desired ways. In this study, three organization states of iron oxide nanoparticles (gamma-Fe2O3), defining as (i) assembly (ii) network aggregate and (iii) cluster, have been developed by simply changing the solvent evaporation conditions. All three systems have retained the same phase and polydispersity of primary particles. Magnetic measurements show that the partial alignment of the easy axes of the particles in the network system due to the stacking aggregation morphology can result in significant enhancement of the coercivity and remanence values, while the opposite is obtained for the cluster system due to the random orientation of easy axes. Partial alignment in the aggregate system also results in noticeable non -monotonic field dependence of ZFC peak temperature (TpeaB). The lowest value of the blocking temperature (TB) for the cluster system is related to the lowering of the effective anisotropy due to the strongest demagnetizing effect. FC (Field cooled) memory effect was observed to be decreasing with the increasing strength of dipolar interaction of organization states. Therefore, the stacking aggregation and the cluster formation are two interesting ways of magnetic nanoparticles organization for modulating collective magnetic properties significantly, which can have renewed application potentials from recording devices to biomedicine. (C) 2016 Elsevier B.V. All rights reserved.

On the Geometrically Dependent Quasi-Saturation and g(m) Reduction in Advanced DeMOS Transistors

This paper reveals an early quasi-saturation (QS) effect attributed to the geometrical parameters in shallow trench isolation-type drain-extended MOS (STI-DeMOS) transistors in advanced CMOS technologies. The quasi-saturation effect leads to serious g(m) reduction in STI-DeMOS. This paper investigates the nonlinear resistive behavior of the drain-extended region and its impact on the particular behavior of the STI-DeMOS transistor. In difference to vertical DMOS or lateral DMOS structures, STI-DeMOS exhibits three distinct regions of the drain extension. A complete understanding of the physics in these regions and their impact on the QS behavior are developed in this paper. An optimization strategy is shown for an improved g(m) device in a state-of-the-art 28-nm CMOS technology node.