Percolative switching in transition metal dichalcogenide field-effect transistors at room temperature
Data(s) |
2016
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Resumo |
We have addressed the microscopic transport mechanism at the switching or `on-off' transition in transition metal dichalcogenide (TMDC) field-effect transistors (FETs), which has been a controversial topic in TMDC electronics, especially at room temperature. With simultaneous measurement of channel conductivity and its slow time-dependent fluctuation (or noise) in ultrathin WSe2 and MoS2 FETs on insulating SiO2 substrates where noise arises from McWhorter-type carrier number fluctuations, we establish that the switching in conventional backgated TMDC FETs is a classical percolation transition in a medium of inhomogeneous carrier density distribution. From the experimentally observed exponents in the scaling of noise magnitude with conductivity, we observe unambiguous signatures of percolation in a random resistor network, particularly, in WSe2 FETs close to switching, which crosses over to continuum percolation at a higher doping level. We demonstrate a powerful experimental probe to the microscopic nature of near-threshold electrical transport in TMDC FETs, irrespective of the material detail, device geometry, or carrier mobility, which can be extended to other classes of 2D material-based devices as well. |
Formato |
application/pdf |
Identificador |
http://eprints.iisc.ernet.in/53446/1/Nan_27_12_125706_2015.pdf Paul, Tathagata and Ghatak, Subhamoy and Ghosh, Arindam (2016) Percolative switching in transition metal dichalcogenide field-effect transistors at room temperature. In: NANOTECHNOLOGY, 27 (12). |
Publicador |
IOP PUBLISHING LTD |
Relação |
http://dx.doi.org/10.1088/0957-4484/27/12/125706 http://eprints.iisc.ernet.in/53446/ |
Palavras-Chave | #Physics |
Tipo |
Journal Article PeerReviewed |