231 resultados para electronic implementation


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One of the long standing problems in quantum chemistry had been the inability to exploit full spatial and spin symmetry of an electronic Hamiltonian belonging to a non-Abelian point group. Here, we present a general technique which can utilize all the symmetries of an electronic (magnetic) Hamiltonian to obtain its full eigenvalue spectrum. This is a hybrid method based on Valence Bond basis and the basis of constant z-component of the total spin. This technique is applicable to systems with any point group symmetry and is easy to implement on a computer. We illustrate the power of the method by applying it to a model icosahedral half-filled electronic system. This model spans a huge Hilbert space (dimension 1,778,966) and in the largest non-Abelian point group. The C60 molecule has this symmetry and hence our calculation throw light on the higher energy excited states of the bucky ball. This method can also be utilized to study finite temperature properties of strongly correlated systems within an exact diagonalization approach. (C) 2011 Wiley Periodicals, Inc. Int J Quantum Chem, 2012

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Photoemission spectroscopy offers the unique possibility of mapping out the electronic structure of the occupied electron states. However, the extreme surface sensitivity of this technique ensures that only the surface and the near-surface regions of any sample are probed. An important question arises in this context—Is the electronic structure of the surface region the same as that of the bulk? We address this issue using two different series of vanadium oxides, Ca1−xSrxVO3 and La1−xCaxVO3. Our results clearly establish that the electronic structure of the surface region is drastically different from that of the bulk in both these cases. We provide a method to separate the two contributions: one arising from the near-surface region and the other representative of the bulk. This separation allows us to deduce some very unusual behaviors of the electronic structures in these systems.

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Recent developments in our laboratory related to polymer-based light sensors are reviewed. The inherent processibility of the active polymer medium is utilized in the implementation of different designs for the opto-electronic applications. The utility of these devices as sensitive photodetectors, image sensors and position sensitive detectors is demonstrated. The schottky-type layer formation at interfaces of polymers such as polyalkylthiophenes and aluminum accompanied by the enhanced photo-induced charge separation due to high local electric field is tapped for some of these device structures. The sensitivity of polymer-based field effect transistors to light also provides a convenient lateral geometry for efficient optical-coupling and control of the transistor state. ne range of these polymer-detectors available with the option of operating in the diode and transistor modes should be an attractive feature for many potential applications.

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Symmetrized DMRG calculations on long oligomers of poly- para-phenylene (PPP) and poly-para-phenylene vinylene (PPV) systems within a `U-V' model have been carried out to obtain the one-photon, two-photon and singlet-triplet gaps in these systems. The extrapolated gaps (in eV) are 2.89, 3.76 and 2.72 in PPP and 3.01, 3.61 and 2.23 in PPV for the one- photon, two-photon and spin gaps respectively. By studying doped systems, we have obtained the exciton binding energies. The larger exciton binding energies, compared to strongly dimerized linear chains emphasizes the role of topology in these polymers. Bond orders, charge and spin correlations in the low-lying states bring out the similarities between the lowest one-photon, the lowest triplet and the lowest bipolaronic states in these systems. The two-photon state bond orders show evidence for strong localization of this excitation in both PPP and PPV systems.

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This paper describes the different types of space vector based bus clamped PWM algorithms for three level inverters. A novel bus clamp PWM algorithm for low modulation indices region is also presented. The principles and switching sequences of all the types of bus clamped algorithms for high switching frequency are presented. Synchronized version of the PWM sequences for high power applications where switching frequency is low is also presented. The implementation details on DSP based digital controller and experimental results are presented. The THD of the output waveforms is studied for the entire operating region and is compared with the conventional space vector PWM technique. The bus clamped techniques can be used to reduce the switching losses or to improve the output voltage quality or both.. Different issues dominate depending on the type of application and power rating of the inverters. The results presented in this paper can be used for judicious use of the PWM techniques, which result in improved system efficiency and performance.

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This paper presents the design and implementation of a learning controller for the Automatic Generation Control (AGC) in power systems based on a reinforcement learning (RL) framework. In contrast to the recent RL scheme for AGC proposed by us, the present method permits handling of power system variables such as Area Control Error (ACE) and deviations from scheduled frequency and tie-line flows as continuous variables. (In the earlier scheme, these variables have to be quantized into finitely many levels). The optimal control law is arrived at in the RL framework by making use of Q-learning strategy. Since the state variables are continuous, we propose the use of Radial Basis Function (RBF) neural networks to compute the Q-values for a given input state. Since, in this application we cannot provide training data appropriate for the standard supervised learning framework, a reinforcement learning algorithm is employed to train the RBF network. We also employ a novel exploration strategy, based on a Learning Automata algorithm,for generating training samples during Q-learning. The proposed scheme, in addition to being simple to implement, inherits all the attractive features of an RL scheme such as model independent design, flexibility in control objective specification, robustness etc. Two implementations of the proposed approach are presented. Through simulation studies the attractiveness of this approach is demonstrated.

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We report Raman signatures of electronic topological transition (ETT) at 3.6 GPa and rhombohedral (alpha-Bi2Te3) to monoclinic (beta-Bi2Te3) structural transition at similar to 8 GPa. At the onset of ETT, a new Raman mode appears near 107 cm(-1) which is dispersionless with pressure. The structural transition at similar to 8 GPa is marked by a change in pressure derivative of A(1g) and E-g mode frequencies as well as by appearance of new modes near 115 cm(-1) and 135 cm(-1). The mode Grilneisen parameters are determined in both the alpha and beta-phases. (C) 2011 Elsevier Ltd. All rights reserved.

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In todays era of energy crisis and global warming, hydrogen has been projected as a sustainable alternative to depleting CO2-emitting fossil fuels. However, its deployment as an energy source is impeded by many issues, one of the most important being storage. Chemical hydrogen storage materials, in particular B?N compounds such as ammonia borane, with a potential storage capacity of 19.6 wt?% H2 and 0.145 kg?H?2?L-1, have been intensively studied from the standpoint of addressing the storage issues. Ammonia borane undergoes dehydrogenation through hydrolysis at room temperature in the presence of a catalyst, but its practical implementation is hindered by several problems affecting all of the chemical compounds in the reaction scheme, including ammonia borane, water, borate byproducts, and hydrogen. In this Minireview, we exhaustively survey the state of the art, discuss the fundamental problems, and, where applicable, propose solutions with the prospect of technological applications.

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We present the effect of edge structures on the edge energy and stress of BN nanoribbons. Ab initio density functional calculations show that the armchair edge is lower in energy than the zigzag edge by 0.43 eV/angstrom. Both types of the edges are under the compressive stress. The zigzag edges are mechanically more stable than the armchair edges. Based on the calculated edge energies, the equilibrium shape of the BN flakes are found to be regular hexagonal, and dominated by the armchair edges. The zigzag ribbons are found to be half-metallic, whereas the armchair ribbons are semiconducting.

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High molecular weight polyaniline (PANI) was synthesized by a combined procedure incorporating various synthesis methods. Temperature and open circuit potential of the reaction mixture were collected to monitor the reaction progress. The polymer is characterized by various techniques including gel permeation chromatography, dynamic light scattering, infrared spectroscopy, solid-state nuclear magnetic resonance, and differential scanning calorimetry for elucidating the molecular architecture obtained by this method. As-synthesized PANI was found to possess high molecular weight, reduced branching, reduced cross-linking, and to predominantly consist of linear polymer chains. This polymer was also found to be more stable in solution form. JV characteristics of as-synthesized PANI films indicate a high current density which is due to increased free pathways and less traps for the charge transport to occur in PANI films. POLYM. ENG. SCI., 2012. (C) 2012 Society of Plastics Engineers

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Changes in electronic and photovoltaic properties of semiconductor nanocrystals predominantly due to changes in shape are discussed here. Cadmium sulfide (CdS) semiconductor nanocrystals of various shapes (tetrapod, tetrahedron, sphere and rod) obtained using an optimized solvothermal process exhibited a mixed cubic (zinc blende) and hexagonal (wurtzite) crystal structure. The simultaneous presence of the two crystal phases in varying amounts is observed to play a pivotal role in determining both the electronic and photovoltaic properties of the CdS nanocrystals. Light to electrical energy conversion efficiencies (measured in two-electrode configuration laboratory solar cells) remarkably decreased by one order in magnitude from tetrapod -> tetrahedron -> sphere -> rod. The tetrapod-CdS nanocrystals, which displayed the highest light to electrical energy conversion efficiency, showed a favorable shift in position of the conduction band edge leading to highest rate of electron injection (from CdS nanocrystal to the wide band gap semiconductor viz, titanium dioxide, TiO2) and lowest rate of electron-hole recombination (higher free electron lifetimes).

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The demand for high power density lithium-ion batteries (LIBs) for diverse applications ranging from mobile electronics to electric vehicles have resulted in an upsurge in the development of nanostructured electrode materials worldwide. Graphite has been the anode of choice in commercial LiBs. Due to several detrimental electrochemical and environmental issues, efforts are now on to develop alternative non-carbonaceous anodes which are safe, nontoxic and cost effective and at the same time exhibit high lithium storage capacity and rate capability. Titania (TiO2) and tin (Sn) based systems have gained much attention as alternative anode materials. Nanostructuring of TiO2 and SnO2 have resulted in enhancement of structural stability and electrochemical performances. Additionally, electronic wiring of mesoporous materials using carbon also effectively enhanced electronic conductivity of mesoporous electrode materials. We discuss in this article the beneficial influence of structural spacers and electronic wiring in anatase titania (TiO2) and tin dioxide (SnO2).

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Ensuring reliable operation over an extended period of time is one of the biggest challenges facing present day electronic systems. The increased vulnerability of the components to atmospheric particle strikes poses a big threat in attaining the reliability required for various mission critical applications. Various soft error mitigation methodologies exist to address this reliability challenge. A general solution to this problem is to arrive at a soft error mitigation methodology with an acceptable implementation overhead and error tolerance level. This implementation overhead can then be reduced by taking advantage of various derating effects like logical derating, electrical derating and timing window derating, and/or making use of application redundancy, e. g. redundancy in firmware/software executing on the so designed robust hardware. In this paper, we analyze the impact of various derating factors and show how they can be profitably employed to reduce the hardware overhead to implement a given level of soft error robustness. This analysis is performed on a set of benchmark circuits using the delayed capture methodology. Experimental results show upto 23% reduction in the hardware overhead when considering individual and combined derating factors.

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In this work, several tertiary amine-based diaryl diselenides were synthesized and evaluated for their glutathione peroxidase (GPx)-like antioxidant activities using hydrogen peroxide, tert-butyl hydroperoxide and cumene hydroperoxide as substrates and thiophenol (PhSH) and glutathione (GSH) as co-substrates. A comparison of the GPx-like activity of 4-methoxy-substituted N,N-dialkylbenzylamine-based diselenides with that of the corresponding 6-methoxy-substituted compounds indicates that the activity highly depends on the position of the methoxy substituent. Although the methoxy group at 4- and 6-position alters the electronic properties of selenium, the substitution at the 6-position provides the required steric protection for some of the key intermediates in the catalytic cycle. A detailed experimental and theoretical investigation reveals that the 6-methoxy substituent prevents the undesired thiol exchange reactions at the selenium centers in the selenenyl sulfide intermediates. The 6-methoxy substituent also prevents the formation of seleninic and selenonic acids. When PhSH is used as the thiol co-substrate, the 4-methoxy-substituted diselenides exhibit GPx-like activity similar to that of the parent compounds as the 4-methoxy substituent does not block the selenium center in the selenenyl sulfide intermediates from thiol exchange reactions. In contrast, the 4-methoxy substituent significantly enhances the GPx-like activity of the diselenides when glutathione (GSH) is used as the co-substrate. (C) 2012 Elsevier Ltd. All rights reserved.

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Facile synthesis of two new dimesitylboryl appended BODIPYs is reported. The two dyads have similar fluorescent chromophores but differ in their molecular conformations. They exhibit dual fluorescence, intramolecular energy transfer between boryl and BODIPY chromophores and different fluorescence responses (emission enhancement and quenching) upon fluoride binding.