442 resultados para Pressure films
Resumo:
The simply supported rhombic plate under transverse load has received extensive attention from elasticians, applied mathematicians and engineers. All known solutions are based on approximate procedures. Now, an exact solution in a fast converging explicit series form is derived for this problem, by applying Stevenson's tentative approach with complex variables. Numerical values for the central deflexion and moments are obtained for various corner angles. The present solution provides a basis for assessing the accuracy of approximate methods for analysing problems of skew plates or domains.
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The metal to insulator transition in the charge-transfer NiS2-xSex compound has been investigated through infrared reflectivity. Measurements performed by applying pressure to pure NiS2 (lattice contraction) and by Se alloying (lattice expansion) reveal that in both cases an anomalous metallic state is obtained. We find that optical results are not compatible with the linear Se-alloying vs pressure-scaling relation previously established through transport, thus pointing out the substantially different microscopic origin of the two transitions.
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The electrical activation energy and optical band-gap of GeSe and GeSbSe thin films prepared by flash evaporation on to glass substrates have been determined. The conductivities of the films were found to be given by Image , the activation energy Ea being 0.53 eV and 0.40 eV for GeSe and GeSbSe respectively. The optical absorption constant α near the absorption edge could be described by Image from which the optical band-gaps E0 were found to be 1.01 eV for GeSe and 0.67 eV for GeSbSe at 300°K. At 110°K the corresponding values of E0 were 1.07 eV and 0.735 eV respectively. The significance of these values is discussed in relation to those of other amorphous semiconductors.
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The present study is to investigate the interaction of strong shock heated oxygen on the surface of SiO2 thin film. The thermally excited oxygen undergoes a three-body recombination reaction on the surface of silicon dioxide film. The different oxidation states of silicon species on the surface of the shock-exposed SiO2 film are discussed based on X-ray Photoelectron Spectroscopy (XPS) results. The surface morphology of the shock wave induced damage at the cross section of SiO2 film and structure modification of these materials are analyzed using scanning electron microscopy and ion microscopy. Whether the surface reaction of oxygen on SiO2 film is catalytic or non-catalytic is discussed in this paper.
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The interfacial shear rheological properties of a continuous single-crystalline film of CuS and a 3D particulate gel of CdS nanoparticles (3−5 nm in diameter) formed at toluene−water interfaces have been studied. The ultrathin films (50 nm in thickness) are formed in situ in the shear cell through a reaction at the toluene−water interface between a metal−organic compound in the organic layer and an appropriate reagent for sulfidation in the aqueous layer. Linear viscoelastic spectra of the nanofilms reveal solid-like rheological behavior with the storage modulus higher than the loss modulus over the range of angular frequencies probed. Large strain amplitude sweep measurements on the CdS nanofilms formed at different reactant concentrations suggest that they form a weakly flocculated gel. Under steady shear, the films exhibit a yield stress, followed by a steady shear thinning at high shear rates. The viscoelastic and flow behavior of these films that are in common with those of many 3D “soft” materials like gels, foams, and concentrated colloidal suspensions can be described by the “soft” glassy rheology model.
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The performance of optoelectronic devices critically depends on the quality of active layer. An effective way to obtain a high quality layers is by creating excess of metal atoms through various heat treatments. Recently, rapid thermal annealing (RTA) has proved a versatile technique for the post-treatment of semiconductor materials as compared to other techniques due to its precise control over the resources. Thus, we carried out a set of experiments on SnS films to explore the influence of RTA treatment on their properties. From these experiments we noticed that the films treated at 400 °C for 1 min in N2 atmosphere have a low electrical resistivity of ~5 Ωcm with relatively high Hall mobility and carrier density of 99 cm2/Vs and 1.3 × 1016 cm−3, respectively. The observed results, therefore, emphasise that it is possible to obtain good quality SnS films through RTA treatment without disturbing their crystal structure.
Similar solutions for the incompressible laminar boundary layer with pressure gradient in micropolar
Resumo:
This paper presents the similarity solution for the steady incompressible laminar boundary layer flow of a micropolar fluid past an infinite wedge. The governing equations have been solved numerically using fourth orderRunge-Kutta-Gill method. The results indicate the extent to which the velocity and microrotation profiles, and the surface shear stress are influenced by coupling, microrotation, and pressure gradient parameters. The important role played by the standard length of the micropolar fluid in determining the structure of the boundary layer has also been discussed.
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Tyrosine aminotransferase activity in the liver increased about fourfold after 9h, on exposure of rats to stress of low pressure. 2. The phenylalanine hydroxylase activity increased about 60% on exposure for 24h or more. 3. An environmental pressure decrease of about 0.033 MN/m2 is needed to increase the activity of tyrosine aminotransferase. 4. Adrenalectomy completely abolished the increase in activity of tyrosine aminotransferase obtained on exposure to low pressure. 5. Treatment with cycloheximide or actinomycin D prevented the increase in activity of tyrosine aminotransferase. 6. Treatment with cycloheximide at the early part of exposure to stress prevented the increase in activity of phenylalanine hydroxylase obtained after 24h.
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The pressure dependence (0-7 kbar) of the magnetic susceptibility is reported for the intermediate valence system EuPd2Si2 in the temperature interval 77-300K. It is found that the thermally induced valence transition becomes more gradual on application of pressure The characteristic fluctuation temperature Tf, also seems to be pressure dependent.
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Some aspects of the pyrolysis of polystyrene peroxide (PSP) have been examined. Low-temperature decomposition studies at 60°C and 70°C have been carried out to elucidate the ageing behaviour of PSP. The exothermic decomposition was found to be complete in 44 h at 70°C suggesting that all peroxide bonds have broken. Enthalpy measurements of the aged samples were carried out as a function of storage time. Ageing was also followed by infrared spectroscopy, and the intensity of the peroxide absorption around 1050 cm−1 was found to decrease with ageing time. Benzaldehyde formed as a result of PSP pyrolysis is readily converted into benzoic acid, which crystallizes during the ageing process. Pyrolysis—gas chromatographic studies have shown that up to 450°C the basic decomposition mechanism (i.e., the formation of benzaldehyde and formaldehyde as the major products) does not change. No effect of pressure on the decomposition exotherm in differential thermal analysis was observed, suggesting that peroxide composition involves only condensed phase reactions. Hydroquinone, p-aminophenol and cadmium sulphide were found to retard the thermal decomposition of PSP, suggesting that these compounds would be potential antioxidants for polymers.
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Electrical transport in Bi doped amorphous semiconductors (GeSe3.5)100-xBix (x=0,4,10) is studied in a Bridgman anvil system up to a pressure of 90 kbar and down to 77 K. A pressure induced continuous transition from an amorphous semiconductor to a metal-like solid is observed in GeSe3.5. The addition of Bi disturbs significantly the behaviour of resistivity with pressure. The results are discussed in the light of molecular cluster model for GeySe1-y proposed by Phillips.
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Scaling relations between the critical indices are derived for two similar systems exhibiting λ lines: binary liquid systems and ferromagnets under pressure. In addition to the usual scaling relations, this procedure gives information about other weakly divergent quantities like isothermal compressibility and thermal expansion. Suggestions for more detailed investigations are made.