Mechanical and Chemical Thresholds in IV-VI Chalcogenide Glasses

It has been possible to identify two critical compositions in the IV-VI chalcogenide glassy system GexSe100-x by the anomalous variations of the high-pressure electrical resistivity behavior. The first critical composition, the chemical threshold, refers to the stoichiometric composition. The second critical composition, identified recently as the mechanical percolation threshold, is connected with the structural rigidity of the material.

Ionic conductivity and dielectric measurements in single crystal β---AgI

Ionic conductivity measurements have been made on pure, copper-doped and cadmium-doped single crystals. Dielectric measurements in the frequency range 30Hz–100Hz showed that there was no anomalously to be (0.64 ± 0.02) eV and migration energies for silver ion intersitials and vacancies in the c direction to be (0.41 ± 0.02) eV and (0.50 ± 0.02) eV respectively. ESR measurements have shown that copper exists as Cu+ in these crystals. Dielectric measurements in the frequency range (OHz–100KHz showed that there was no anomalously high value for ε as reported earlier.

Non-periodic tilings in 2-dimensions: 4- and 7-fold symmetries

By inflating basic rhombuses, with a self-similarity principle, non-periodic tiling of 2-d planes is possible with 4, 5, 6, 7, 8, … -fold symmetries. As examples, non-periodic tilings with crystallographically allowed 4-fold symmetry and crystallographically forbidden 7-fold symmetry are presented in detail. The computed diffraction patterns of these tilings are also discussed.

Electrophilic Substitution Reactions of Copper(II) Acetylacetoneimine Complexes with Arene Diazonium Ions

Copper(II) complexes of ethylene/propylene-bis(acetylacetoneimine), Cu(baen) or Cu(bapn), react quickly and quantitatively in aqueous methanol at the methine position with arene diazonium ions in a stepwise manner to yield mono- and di-substituted copper(II) complexes. All the complexes are paramagnetic with μeff∼1.88 B.M. In all the complexes the diazo substituted part of the ligand coordinates to the metal through the agr-nitrogen of the azo group and the imine nitrogen, forming glyoxaliminearylhydrazone type of ligand system. The complexes have been characterized by elemental analysis, electronic, esr, ir and mass spectroscopic methods.

Anisotropic properties of the layered semiconductor in Te

Anisotropic properties of the Bridgman grown layered semiconductor p-InTe were studied by analyzing the temperature dependence of electrical conductivity and Hall mobility parallel and perpendicular to the layer planes. The mobilities were μamalgamation or coproduct = 50–60 cm2V−1 sec−1 and μperpendicular = 10–15 cm2V−1sec−1 and varied as μ ≈ Tn where n = 1.43 due to impurity scattering. Pressure-induced semiconductor-metal transition occurred at about 50 kbar. The pressure coefficient of resistance was 3 times larger in the direction perpendicular to the layer plane due to the difference between inter and intra-planar bonding.

Investigations of the Nature of Critical Line Very Close to a Double Critical Point

The curvature of the line of critical points in a reentrant ternary mixture is determined by approaching the double critical point (DCP) extremely closely. The results establish the continuous and quadratic nature of this line. Out study encompasses as small a loop size (ΔT) as 663 mK. The DCP is realized when ΔT becomes zero.

Measurement of the corrosion rate of aluminium in sodium hydroxide using holographic interferometry

The application of holographic interferometry to the measurement of the corrosion rate of aluminium in sodium hydroxide is investigated. Details of the fabrication of the corrosion cell and the experimental procedure are given. Thickness loss of aluminium was found for different dissolution times and compared with the conventional weight-loss method using a microbalance.

Perturbation of critical solution temperatures by impurity doping

An expression is developed for the variation of the critical solution temperature of a binary liquid system when a third component (dopant) is added, using an extension of the regular solution theory. The model can be used for UCST, LCST and for closed loop systems and has the correct features in the limiting cases.

Symmetry preservation during radiation damage

An examination of radiation-damage processes consequent to high-energy irradiation in certain ammonium salts studied using ESR of free radical together with the structural information available from neutron diffraction studies shows that, other factors being equal/nearly equal, symmetry-related bonds are preserved in preference to those unrelated to one another by any symmetry.

Coexistence of para and ferromagnetic phases of Fe3+ in undoped CdZnTe (Zn similar to 4%) crystals

The signatures of the coexistence of para and ferromagnetic phases for the Fe3+ charge state of iron have been identified in the low temperature electron spin resonance (ESR) spectra in undoped CdZnTe (Zn similar to 4%) crystals and independently verified by superconducting quantum interference device (SQUID) and AC susceptibility measurements. In the paramagnetic phase the inverse of AC susceptibility follows the Curie-Weiss law. In the ferromagnetic phase the thermal evolution of magnetization follows the well-known Bloch T-3/2 law. This is further supported by the appearance of hysteresis in the SQUID measurements at 2 K below T-c which is expected to lie in between 2 and 2.5 K. (C) 2010 Elsevier Ltd. All rights reserved.

Impurity effects on the critical behaviour of the electrical resistance of binary liquid mixtures

The electrical resistance of the binary liquid system cyclohexane + acetic anhydride is measured, in the critical region, both in the pure mixture and when the mixture is doped with small amounts (≈ 100 ppm) of H2O/D2O impurities.T c was approached to aboutt=3×10−6 wheret=(T −T c )/T c . The critical exponentb ≈ 0.35 in the fit of the resistance data to the equationdR/dT ∼t −b does not seem to be affected appreciably by the impurities. There is a sign reversal ofdR/dt in the non-critical region. Binary liquid systems seem to violate the universality of the critical resistivity.

Directional solidification of aluminum-nickel eutectic alloys using electroslag remelting

Attempts were made to produce directionally solidified, specifically grain aligned Al-6 wt pct Ni eutectic alloy using a laboratory scale ESR unit. For this purpose sand cast alloy electrodes were electroslag remelted under different mold conditions. The grain structure of the ingots obtained from these meltings showed that insulated silica molds gave the best vertical alignment of grains along the length of the ingot. The NiAl3 fibers within the grains tended to fan out and there was only a preferred alignment of fibers along the growth direction under the conditions of our experiments. The ESR parameters most suitable for vertical alignment of eutectic grains have been identified. In some electroslag remelting trials ingots were grown on a seed ingot. This resulted in a fewer vertical grains compared to the case when no seed ingot was used. The sand cast specimen of the eutectic exhibited a maximum tensile strength of around 88.2 MN/m2 (9.0 kg/mm2) whereas conventional ESR using water cooled mold gave strength value of 98.0 MN/m2 (10 kg/mm2). The directionally solidified ESR material showed longitudinal tensile strength as high as 213.7 MN/m2 (21.8 kg/mm2) which could be further increased to 220.6 MN/m2 (22.5 kg/mm2) by using the seed ingot. The average growth rate was varied between 5 to 25 mm/min during electroslag remelting in this study. The flow stresses, tangent modulus and ultimate tensile strength of directionally solidified eutectic increased with increasing growth rates.