283 resultados para well shooting

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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本文是关于低渗油田增产技术的室内模拟实验研究的论文。我们对井内爆炸采油、核爆采油和高能气体压裂进行全面调研以后,吸取了井内爆炸采油的教训,借鉴了高能气体压裂的成功经验,提出了低渗油田“层内爆炸”增产技术。该技术是利用水力压裂技术的现有设备,将适当的炸药压入岩石裂缝,再用适当的方法起爆,从而在岩石裂缝周围产生大量裂缝,在不会对储层产生不利影响也不会毁坏井筒的前提下,达到提高采取收率并增产油气的目的。首先,建立了圆管点火实验装置、小尺度模拟实验装置和平板点火实验装置;然后利用实验装置进行了“层内爆炸”用特种火药和特种炸药配方的探索。通过实验我们至少找到了一种“层内爆炸”用药品的配方,并且在小尺度模拟实验装置中实现了“层内爆炸”基本过程的模拟实验,从而证实“层内爆炸”思路正确,原理上可行。接着,建立了爆燃推进的模型,并在恒稳推进和不可压缩简化条件下得到几组算例,这些解在物理上是合理的。通过计算我们得知爆燃恒温推进的条件是苛刻的,需要多个参数的匹配。通过本人硕士论文的工作,证实了低渗油田“层内爆炸”增产技术在原理上的可行性。但因为“层内爆炸”过程中牵涉到多个特征尺度,因此并不能从小尺度向大尺度简单地推广,下一步工作是建立中大尺度模拟实验装置,考察在中大尺度条件下“层内爆炸”的可行性,为现场实际应用作充分的实验准备。

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Research and field experience have shown that well-path control is important in many cases, not only to reach the desired coordinates, but also to arrive at the well completion target from the preferred trajectory.

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It is now possible to improve the precision of well survey calculations by order of magnitude with numerical approximation.

Although the most precise method of simulating and calculating a wellbore trajectory generally requires more calculation than other, less-accurate methods, the wider use of computers in oil fields now eliminates this as an obstacle.

The results of various calculations show that there is a deviation of more than 10 m among the different methods of calculation for a directional well of 3,000 m.1 Consequently, it is important to improve the precision and reliability of survey calculation-the fundamental, necessary work of quantitatively monitoring and controlling wellbore trajectories.

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Based on the theory of the pumping well test, the transient injection well test was suggested in this paper. The design method and the scope of application are discussed in detail. The mathematical models are developed for the short-time and long-time transient injection test respectively. A double logarithm type curve matching method was introduced for analyzing the field transient injection test data. A set of methods for the transient injection test design, experiment performance and data analysis were established. Some field tests were analyzed, and the results show that the test model and method are suitable for the transient injection test and can be used to deal with the real engineering problems.

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Two-dimensional ZnO nanowall networks were grown on ZnO-coated silicon by thermal evaporation at low temperature without catalysts or additives. All of the results from scanning electronic spectroscope, X-ray diffraction and Raman scattering confirmed that the ZnO nanowalls were vertically aligned and c-axis oriented. The room-temperature photoluminescence spectra showed a dominated UV peak at 378 nm, and a much suppressed orange emission centered at similar to 590 nm. This demonstrates fairly good crystal quality and optical properties of the product. A possible three-step, zinc vapor-controlled process was proposed to explain the growth of well-aligned ZnO nanowall networks. The pre-coated ZnO template layer plays a key role during the synthesis process, which guides the growth direction of the synthesized products. (C) 2007 Elsevier B.V. All rights reserved.

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This paper describes a new technology for solonchak soil reclamation in which surface flood irrigation of fresh water and pumped wells drainage of salty groundwater are combined. The comprehensive investigation of water and salt movement has been conducted through field test, laboratory simulation and numerical calculation. The dependence of desalination on irrigation water quantity, drainage quantity, leaching time and other parameters is obtained based on the field tests. The entire desalination process under the flood-irrigation and well-drainage operations was experimentally simulated in a vertical soil column. The water and salt movement has been numerically analysed for both the field and laboratory conditions. The present work indicates that this new technology can greatly improve the effects of desalination.

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Pathogenic conformational conversion is a general causation of many disease, such as transmissible spon- giform encephalopathy (TSE) caused by misfolding of prion, sickle cell anemia, and etc. In such structural changes, misfolding occurs in regions important for the stability of native structure firstly. This destabi- lizes the normal conformation and leads to subsequent errors in folding pathway. Sites involved in the first stage can be deemed switch regions of the protein, and are vital for conformational conversion. Namely it could be a switch of disease at residue level. Here we report an algorithm that can identify such sites computationally with an accuracy of 93%, by calculating the probability of the native structure of a short segment jumping to a mistake one. Knowledge of such switch sites could be used to target clinical therapy, study physiological and pathologic mechanism of protein, and etc.

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Abstract. The atomic motion is coupled by the fast and slow components due to the high frequency vibration of atoms and the low frequency deformation of atomic lattice, respectively. A two-step approximate method was presented to determine the atomic slow motion. The first step is based on the change of the location of the cold potential well bottom and the second step is based on the average of the appropriate slow velocities of the surrounding atoms. The simple tensions of one-dimensional atoms and two-dimensional atoms were performed with the full molecular dynamics simulations. The conjugate gradient method was employed to determine the corresponding location of cold potential well bottom. Results show that our two-step approximate method is appropriate to determine the atomic slow motion under the low strain rate loading. This splitting method may be helpful to develop more efficient molecular modeling methods and simulations pertinent to realistic loading conditions of materials.

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We investigate the enhancement of Kerr nonlinearity in an asymmetric GaAs double quantum well via Fano interference, which is caused by tunneling from the excited subband to the continuum. In our structure, owing to Fano interference, the Kerr nonlinearity can be enhanced by appropriately choosing the values of the detunings and the intensity of the pump field, while cancel the linear and nonlinear absorptions.

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We investigate the emission spectra of the semiconductor quantum well for few-cycle and sub-cycle pulse exciting. We find that Fano interference may induce third harmonic enhancement. Third harmonic enhancement varies with the magnitude and duration of the incident pulse, and may be enhanced by approximately one order of magnitude for the low intensity region of the sub-cycle incident pulse exciting.

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We investigate the carrier-wave Rabi flopping effects in an asymmetric semiparabolic semiconductor quantum well (QW) with few-cycle pulse. It is found that higher spectral components of few-cycle ultrashort pulses in the semiparabolic QW depend crucially on the carrier-envelope phase (CEP) of the few-cycle ultrashort pulses: continuum and distinct peaks can be achieved by controlling the CEP. Our results demonstrate that by adjusting the CEP of few-cycle ultrashort pulses, the intersubband dynamics in the asymmetric semiparabolic QW can be controlled in an ultrashort timescale with moderate laser intensity. (c) 2008 Optical Society of America.

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We propose an asymmetric double AlGaAs/GaAs quantum well structure with a common continuum to generate a large cross-phase modulation (XPM). It is found, owing to resonant tunneling, that a large XPM can be achieved with vanishing linear and two-photon absorptions. (c) 2007 Optical Society of America.

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A spin-injection/-detection device has been fabricated based on the multiple quantum well light emitting diode (LED) structure. It is found that only a broad electroluminescence (EL) peak of a full width at half maximum of 8.6 nm appears at the wavelength of 801 nm in EL spectra with a circular luminescence polarization degree of 18%, despite PL spectra always show three well resolved peaks. The kinetic energy gained by injected electrons and holes in their drift along opposite directions broadens the EL peak, and makes three EL peaks converge together. The same process also destroys the injected spin polarization of electrons mainly dominated by the Bir-Aronov-Pikus spin relaxing mechanism.

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Using effective-mass Hamiltonian model of semiconductors quantum well structures, we investigate the electronic structures of the Gamma-conduction and L-conduction subbands of GeSn/GeSiSn strained quantum well structure with an arbitrary composition. Our theoretical model suggests that the band structure could be widely modified to be type I, negative-gap or indirect-gap type II quantum well by changing the mole fraction of alpha-Sn and Si in the well and barrier layers, respectively. The optical gain spectrum in the type I quantum well system is calculated, taking into account the electrons leakage from the Gamma-valley to L-valley of the conduction band. We found that by increasing the mole fraction of alpha-Sn in the barrier layer and not in the well layer, an increase in the tensile strain effect can significantly enhance the transition probability, and a decrease in Si composition in the barrier layer, which lowers the band edge of Gamma-conduction subbands, also comes to a larger optical gain.