Polarization Self-Modulation Phenomenon in a Free Oscillated Nd: YAG Laser

Polarization self-modulation effect in a free oscillated Nd:YAG laser is investigated after a quarter wave plate is introduced independently in the two positions of the cavity. As described in the previous experiments, the intensity components in the orthogonal directions are modulated with a period of the round-trip time or twice. Different pulse shapes reveal that the seed field from the spontaneous emission is not uniform and seems to be stochastic for each pulse.

Numerical Analysis of a Dual Polarization Mode-Locked Laser with a Quarter Wave Plate

Dynamical behaviors and frequency characteristics of an active mode-locked laser with a quarter wave plate (QWP) are numerically studied by using a set pf vectorial laser equation. Like a polarization self-modulated laser, a frequency shift of half the cavity mode spacing exists between the eigen-modes in the two neutral axes of QWP. Within the active medium, the symmetric gain and cavity structure maintain the pulse's circular polarization with left-hand and right-hand in turn for each round trip. Once the left-hand or right-hand circularly polarized pulse passes through QWP, its polarization is linear and the polarized direction is in one of the directions of i45o with respect to the neutral axes of QWP. The output components in the directions of i45" from the mirror close to QWP are all linearly polarized with a period of twice the round-trip time.

Frequency characteristics and dynamical behaviors of self-modulation in vertical-cavity surface-emitting lasers

The frequency characteristics of a VCSEL with a quarter-wave plate (QWP) and an external reflector are investigated with the translation matrix of the vectorial field. Two series of eigenmode with a shift of half the free spectrum range are linearly polarized, respectively, along the neutral axes of QWP. We also numerically explore the polarization self-modulation phenomenon by using a vectorial laser equation and considering the inhomogeneous broadening of the gain medium. If the external cavity is so short that the shift is bigger than the homogeneous broadening, two stable longitudinal modes oscillate, respectively, on the neutral axes of QWP because they consume different carriers. With a long external cavity, the competition of the modes for the common carriers causes the intensity fluctuation of the modes with a period of one round-trip time of the external cavity.

Femtosecond pulse laser-induced self-organized nanostructures on the surface of ZnO crystal

This paper reports self-organized nanostructures observed on the surface of ZnO crystal after irradiation by a focused beam of a femtosecond Ti:sapphire laser with a repetition rate of 250 kHz. For a linearly polarized femtosecond laser, the periodic nanograting structure on the ablation crater surface was promoted. The period of self-organization structures is about 180 nm. The grating orientation is adjusted by the laser polarization direction. A long range Bragg-like grating is formed by moving the sample at a speed of 10 mu m/s. For a circularly polarized laser beam, uniform spherical nanoparticles were formed as a result of Coulomb explosion during the interaction of near-infrared laser with ZnO crystal.

Femtosecond pulse laser-induced self-organized nanogratings on the surface of a ZnSe crystal

Periodic nanostructures are observed on the surface of ZnSe after irradiation by a focused beam of a femtosecond Ti:sapphire laser, which are aligned perpendicular to the laser polarization direction. The period of self-organized grating structures is about 160 nm. The phenomenon is interpreted in terms of interference between the incident light field and the surface scattered wave of 800-nm laser pulses. With the laser polarization parallel to the moving direction we produce long-range Bragg-like gratings by slowly moving the crystal under a fixed laser focus. The nanograting orientation is adjusted by laser polarization and the accumulation effect.

Polarization-dependent Talbot effect

The term "polarization-dependent Talbot effect" means that the Talbot self-imaging intensity of a high-density grating is different for TE and TM polarization modes. Numerical simulations with the finite-difference time-domain method show that the polarization dependence of the Talbot images is obvious for gratings with period d between 2 lambda and 3 lambda. Such a polarization-dependent difference for TE and TM polarization of, a high-density grating of 630 lines/mm (corresponding to d/lambda = 2.5) is verified through experiments with the scanning near-field optical microscopy technique, in which a He-Ne laser is used as its polarization is changed from the TE mode to the TM mode. The polarization-dependent Talbot effect should help us to understand more clearly the diffraction behavior of a high-density grating in nano-optics and contribute to wide application of the Talbot effect. (c) 2006 Optical Society of America.

Phase interpretation for polarization-dependent near-field images of high-density gratings

It has been described that the near-field images of a high-density grating at the half self-imaging distance could be different for TE and TM polarization states. We propose that the phases of the diffraction orders play an important role in such polarization dependence. The view is verified through the coincidence of the numerical result of finite-difference time-domain method and the reconstructed results from the rigorous coupled-wave analysis. Field distributions of TE and TM polarizations are given numerically for a grating with period d = 2.3 lambda, which are verified through experiments with the scanning near-field optical microscopy technique. The concept of phase interpretation not only explains the polarization dependence at the half self-imaging distance of gratings with a physical view, but also, it could be widely used to describe the near-field diffraction of a variety of periodic diffractive optical elements whose feature size comparable to the wavelength. (C) 2008 Elsevier B.V. All rights reserved.

Effect of spontaneous and piezoelectric polarization on intersubband transition in AlxGa1-xN-GaN quantum well

A self-consistent solution of conduction band profile and subband energies for AlxGa1-xN-GaN quantum well is presented by solving the Schrodinger and Poisson equations. A new method is introduced to deal with the accumulation of the immobile charges at the AlxGa1-xN-GaN interface caused by spontaneous and piezoelectric polarization in the process of solving the Poisson equation. The effect of spontaneous and piezoelectric polarization is taken into account in the calculation. It also includes the effect of exchange-correlation to the one electron potential on the Coulomb interaction. Our analysis is based on the one electron effective-mass approximation and charge conservation condition. Based on this model, the electron wave functions and the conduction band structure are derived. We calculate the intersubband transition wavelength lambda(21) for different Al molar fraction of barrier and thickness of well. The calculated result can fit to the experimental data well. The dependence of the absorption coefficient a on the well width and the doping density is also investigated theoretically. (C) 2004 American Vacuum Society.

Properties and turning of intraband optical absorption in InxGa1-xAs/GaAs self-assembled quantum dot superlattice

We investigated properties of intraband absorption in In-x Ga1-xAs quantum dots (QDs) superlattice. Energy levels in conduction band in QDs were calculated for a cone-shaped quantum dot associated with coupling between QDs in the framework of the effective-mass envelope-function theory. Theoretical results demonstrated that energy levels in conduction band were greatly affected by the vertical coupling between quantum dots, which can be used to modify transition wavelength by adjusting the space layer thickness. Intraband transition is really sensitive to normal incidence and the absorption peak intensity is dependent on the polarization. A satisfying agreement is found between theoretical and experimental values. This result opens up prospects for the fabrication of QDs infrared detectors, which work at atmospheric windows.

Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy

Self-ordering of quasi-quantum wires in multilayer InAlAs/AlGaAs nanostructures grown by molecular beam epitaxy is identified. The chain-like structures along the [1 (1) over bar 0] Of direction formed by coalescence of quantum dots were observed. The photoluminescence of the nanostructures is partially polarized along the [1 (1) over bar 0] direction. The polarization ratio depends on the wavelength and the maximum polarization is on the lower energy side. The maximum polarization increases from 0.32 at 10 K to 0.53 at 100 K, and the energy position of maximum polarization moves near to PL peak with increasing temperature. They are all related to the existence of isolated islands and quasi-quantum wires in our sample. This result provides a novel approach to produce narrow quantum wires. (C) 2000 Elsevier Science B.V. All rights reserved.

Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy

The influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy (XPS) is discussed, and a modification method based on a modified self-consistent calculation is proposed to eliminate the influence and thus increasing the precision of XPS. Considering the spontaneous polarization at the surfaces and interfaces and the different positions of Fermi levels at the surfaces, we compare the energy band structures of Al/Ga-polar AlN/GaN and N-polar GaN/AlN heterojunctions, and give corrections to the XPS-measured valence band offsets. Other AlN/GaN heterojunctions and the piezoelectric polarization are also introduced and discussed in this paper.

Two-photon asymmetric color-locking second-order stochastic correlation of attosecond polarization beats

Based on the phase-conjugation polarization interference between two two-photon processes, we theoretically investigated the attosecond scale asymmetry sum-frequency polarization beat in four-level system (FASPB). The field correlation has weak influence on the FASPB signal when the laser has narrow bandwidth. Conversely, when the laser has broadband linewidth, the FASPB signal shows resonance-nonresonance cross correlation. The two-photon signal exhibits hybrid radiation-matter detuning terahertz; damping oscillation, i.e., when the laser frequency is off resonance from the two-photon transition, the signal exhibits damping oscillation and the profile of the two-photon self-correlation signal also exhibits zero time-delay asymmetry of the maxima. We have also investigated the asymmetry of attosecond polarization beat caused by the shift of the two-photon self-correlation zero time-delay phenomenon, in which the maxima of the two two-photon signals are shifted from zero time-delay point to opposite directions. As an attosecond ultrafast modulation process, FASPB can be intrinsically extended to any level-summation systems of two dipolar forbidden excited states.

A novel PTFE-reinforced multilayer self-humidifying composite membrane for PEM fuel cells

A novel polytetrafluoroethylene (PTFE)-reinforced multilayer self-humidifying composite membrane is developed. The membrane is composed of Nafion-impregnated porous PTFE composite as the central layer and nanosized SiO2 supported Pt catalyst imbedded into Nafion as the two side layers. The proton exchange membrane (PEM) fuel cells employing the self-humidifying membrane (20 mu m thick) under dry H-2/O-2 gave a peak power density of 0.95 W/cm(2) and an open-circuit voltage of 1.032 V. The good membrane performance is attributed to hygroscopic Pt-SiO2 catalyst at the two side layers, which results in enhanced anode side self-humidification function and decreased cathode polarization. (c) 2005 The Electrochemical Society.