论大型拆离滑覆构造的特征、形成机制及其与油气成藏关系—以渤海湾盆地冀中坳陷饶阳凹陷为例

The studies of this paper is an important part of the "ninth five" science&technology-tackling project of CNPC -The oil and gas distribution regulation and the aims of explortion in jizhong depression. Basing on the former research results, with the materials of regional structural setting, major tectonic movements, bi-and tri-dimension seismic sections, oil well sections and reservoir sections, this paper involves studies of tectonic evolution, sedimentarv evolution, magma movement and reservoir prediction. The existence of huge stripping and gliding nappe is proved in the RaoYang Sag for the frist time. The properties, development, evolution and the relationship with reservoir of the stripping and gliding nappe are discussed in details in this paper. It is also talked about the affects of stripping and nappes to oil and gas exploration theoretically and practically in the paper. The marking attributes of the stripping and gliding nappe includes stripping and gliding plane, two deformation systems, stratigraphic repeat and hiatus close to the stripping and gliding plane, and the deformation attributes in the front and back of stripping and gliding nappe. The RaoYang stripping and gliding nappes can be divided into different belts in north-south direction and different zones in east-west direction. RaoYang Stripping and gliging nappes took place in the late Paleogene period and before the sedimentation of Neogene period. The sliding direction is NWW. The sliding distance is about 6km. The geothermal gradient in the separating slump area is low and stable. The formation of the stripping and gliding nappes is due to the regional structural setting, the sediments of Paleogene system, the soft roof and the uneven rising movement of structure units. The evolution of the stripping and gliding nappes can be divided into the following stages: regional differential elevation and subsidence, unstable gravity and gravitational sliding, the frist wholly stripping faults and sliding stage, and the following second and third stripping faults and sliding stages. The identification of RaoNan stripping and gliding nappes has an important role on the research of regional structure and oil and gas exploration. Basing on the properties of stripping and gliding nappes, we can identtify the gliding fractures, ductile compressional folds, the front and back structures of gliding nappes and gliding plane covered structures. Combination with different reservoir forming conditions, these structures can lead to different categories of reservoirs.

Application of plane wave method to the calculation of electronic states of nano-structures

The electronic states of nano-structures are studied in the framework of effective-mass envelope-function theory using the plane wave basis. The barrier width and the number of plane waves are proposed to be 2.5 times the effective Bohr radius and 15(n), respectively, for n-dimensional nano-structures (n = 1,2,3). Our proposals can be widely applied in the design of various nano-structure devices.

Interface-related in-plane optical anisotropy in GaAs/AlxGa1-xAs single-quantum-well structures studied by reflectance difference spectroscopy

The in-plane optical anisotropies of a series of GaAs/AlxGa1-xAs single-quantum-well structures have been observed at room temperature by reflectance difference spectroscopy. The measured degree of polarization of the excitonic transitions is inversely proportional to the well width. Numerical calculations based on the envelope function approximation incorporating the effect of C-2v-interface symmetry have been performed to analyze the origin of the optical anisotropy. Good agreement with the experimental data is obtained when the optical anisotropy is attributed to anisotropic-interface structures. The fitted interface potential parameters are consistent with predicted values.

Calculation of Valence Subband Structures for Strained Quantum-Wells by Plane Wave Expansion Method Within 6 * 6 Luttinger-Kohn Model

The valence subband energies and wave functions of a tensile strained quantum well are calculated by the plane wave expansion method within the 6 * 6 Luttinger-Kohn model. The effect of the number and period of plane-waves used for expansion on the stability of energy eigenvalues is examined. For practical calculation, it should choose the period large sufficiently to ensure the envelope functions vanish at the boundary and the number of plane waves large enough to ensure the energy eigenvalues keep unchanged within a prescribed range.

Micro-shock waves generated inside a fluid jet impinging on plane wall

An Nd:glass laser pulse (18 ns, 1.38 J) is focused in a tiny area of about 100-mum diam under ambient conditions to produce micro-shock waves. The laser is focused above a planar surface with a typical standoff distance of about 4 mm, The laser energy is focused inside a supersonic circular jet of carbon dioxide gas produced by a nozzle with internal diameter of 2.9 mm and external diameter of 8 mm, Nominal value of the Mach number of the jet is around 2 with the corresponding pressure ratio of 7.5 (stagnation pressure/static pressure at the exit of the nozzle), The interaction process of the micro-shock wave generated inside the supersonic jet with the plane wall is investigated using double-pulse holographic interferometry. A strong surface vortex field with subsequent generation of a side jet propagating outward along the plane wail is observed. The interaction of the micro-shock wave with the cellular structure of the supersonic jet does not seem to influence the near surface features of the flowfield. The development of the coherent structures near the nozzle exit due to the upstream propagation of pressure waves seems to be affected by the outward propagating micro-shock wave. Mach reflection is observed when the micro-shock wave interacts with the plane wall at a standoff distance of 4 mm, The Mach stem is slightly deflected, indicating strong boundary-layer and viscous effects near the wall. The interaction process is also simulated numerically using an axisymmetric transient laminar Navier-Stokes solver. Qualitative agreement between experimental and numerical results is good.

A new type of boundary integral-equation for plane problems of elasticity including rotational forces

Based on the idea proposed by Hu [Scientia Sinica Series A XXX, 385-390 (1987)], a new type of boundary integral equation for plane problems of elasticity including rotational forces is derived and its boundary element formulation is presented. Numerical results for a rotating hollow disk are given to demonstrate the accuracy of the new type of boundary integral equation.

The effects of surface tension on the elastic properties of nano structures

In the absence of external loading, surface tension will induce a residual stress field in the bulk of nano structures. However, in the prediction of mechanical properties of nano structures, the elastic response of the bulk is usually described by classical Hooke’s law, in which the aforementioned residual stress was neglected in the existing literatures. The present paper investigates the influences of surface tension and the residual stress in the bulk induced by the surface tension on the elastic properties of nano structures. We firstly present the surface elasticity in the Lagrangian and the Eulerian descriptions and point out that even in the case of infinitesimal deformations the reference and the current configurations should be discriminated; otherwise the out-plane terms of surface displacement gradient, associated with the surface tension, may sometimes be overlooked in the Eulerian descriptions, particularly for curved and rotated surfaces. Then, the residual stress in the bulk is studied through the non-classical boundary conditions and used to construct the linear elastic constitutive relations for the bulk material. Finally, these relations are adopted to analyze the size-dependent properties of pure bending of Al nanowires. The present results show that surface tension will considerably affect the effective Young’s modulus of Al nanowires, which decrease with either the decrease of nanowires thickness or the increase of the aspect ratio.

A load simulation method of piezoelectric actuator in FEM for smart structures

More and more piezoelectric materials and structures have been used for structure control in aviation and aerospace industry. More efficient and convenient computation method for large complex structure with piezoelectric actuation devices is required. A load simulation method of piezoelectric actuation is presented in this paper. By this method, the freedom degree of finite element simulation is significantly reduced, the difficulty in defining in-plane voltage for multi-layers piezoelectric composite is overcome and the transfer computation between material main direction and the element main direction is simplified. The concept of simulation load is comprehensible and suitable for engineers of structure strength in shape and vibration control, thereby is valuable for promoting the application of piezoelectric material and structures in practical aviation and aerospace fields.

Nonpolar m-plane thin film GaN and InGaN/GaN light-emitting diodes on LiAlO2(100) substrates

The nonpolar m-plane (1 (1) over bar 00) thin film GaN and InGaN/GaN light-emitting diodes (LEDs) grown by metal-organic chemical vapor deposition on LiAlO2 (100) substrates are reported. The LEDs emit green light with output power of 80 mu W under a direct current of 20 mA for a 400x400 mu m(2) device. The current versus voltage (I-V) characteristic of the diode shows soft rectifying properties caused by defects and impurities in the p-n junction. The electroluminescence peak wavelength dependence on injection current, for currents in excess of 20 mA, saturates at 515-516 nm. This proves the absence of polarization fields in the active region present in c-plane structures. The light output intensity versus current (L-I) characteristic of the diode exhibits a superlinear relation at low injection current caused by nonradiative centers providing a shunt path and a linear light emission zone at high current level when these centers are saturated. (c) 2007 American Institute of Physics.

Magnetic anisotropies of laterally confined structures of epitaxial Fe films on GaAs (001)

We have investigated magnetic properties of laterally confined structures of epitaxial Fe films on GaAs (001). Fe films with different thicknesses were grown by molecular-beam epitaxy and patterned into regular arrays of rectangles with varying aspect ratios. In-plane magnetic anisotropy was observed in all of the patterned Fe films both at 15 and 300 K. We have demonstrated that the coercive fields can be tuned by varying the aspect ratios of the structures. The magnitudes of the corresponding anisotropy constants have been determined and the shape anisotropy constant is found to be enhanced as the aspect ratio is increased.

Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry

The well-width dependence of in-plane optical anisotropy (IPOA) in (001) GaAs/AlxGa1-xAs quantum wells induced by in-plane uniaxial strain and interface asymmetry has been studied comprehensively. Theoretical calculations show that the IPOA induced by in-plane uniaxial strain and interface asymmetry exhibits much different well-width dependence. The strain-induced IPOA is inversely proportional to the energy spacing between heavy- and light-hole subbands, so it increases with the well width. However, the interface-related IPOA is mainly determined by the probability that the heavy- and light-holes appear at the interfaces, so it decreases with the well width. Reflectance difference spectroscopy has been carried out to measure the IPOA of (001) GaAs/AlxGa1-xAs quantum wells with different well widths. Strain- and interface-induced IPOA have been distinguished by using a stress apparatus, and good agreement with the theoretical prediction is obtained. The anisotropic interface potential parameters are also determined. In addition, the energy shift between the interface- and strain-induced 1H1E reflectance difference (RD) structures, and the deviation of the 1L1E RD signal away from the prediction of the calculation model have been discussed.

Photonic band structures of two-dimensional photonic crystals with deformed lattices

Using the plane-wave expansion method, we have calculated and analysed the changes of photonic band structures arising from two kinds of deformed lattices, including the stretching and shrinking of lattices. The square lattice with square air holes and the triangular lattice with circular air holes are both studied. Calculated results show that the change of lattice size in some special ranges can enlarge the band gap, which depends strongly on the filling factor of air holes in photonic crystals; and besides, the asymmetric band edges will appear with the broken symmetry of lattices.

Interface-related in-plane optical anisotropy of quantum wells studied by reflectance-difference spectroscopy

The in-plane optical anisotropy of three groups of GaAs/AlGaAs quantum well structures has been studied by reflectance-difference spectroscopy (RDS). For GaAs/Al0.36Ga0.64As single QW structures, it is found that the optical anisotropy increases quickly as the well width is decreased. For an Al0.02Ga0.98As/AlAs multiple QW with a well width of 20nm, the optical anisotropy is observed not only for the transitions between ground states but also for those between the excited states with transition index n up to 5. An increase of the anisotropy with the transition energy, or equivalently the transition index n, is clearly observed. The detailed analysis shows that the observed anisotropy arises from the interface asymmetry of QWs, which is introduced by atomic segregation or anisotropic interface roughness formed during the growth of the structures. More, when the 1 ML InAs is inserted at one interface of GaAs/AlGaAs QW, the optical anisotropy of the QW can be increased by a factor of 8 due to the enhanced asymmetry of the QW. These results demonstrate clearly that the RDS is a sensitive and powerful tool for the characterization of semiconductor interfaces.

Study on in-plane optical anisotropy of Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetric superlattice by reflectance difference spectroscopy - art. no. 071908

Si0.75Ge0.25/Si/Si0.5Ge0.5 trilayer asymmetric superlattices were prepared on Si (001) substrate by ultrahigh vacuum chemical vapor deposition at 500 degrees C. The nonlinear optical response caused by inherent asymmetric interfaces in this structure predicted by theories was verified by in-plane optical anisotropy in (001) plane measured via reflectance difference spectroscopy. The results show Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetric superlattice is optically biaxial and the two optical eigen axes in (001) plane are along the directions [110] and [-110], respectively. Reflectance difference response between the above two eigen axes can be influenced by the width of the trilayers and reaches as large as similar to 10(-4)-10(-3) in 15-period 2.7 nm-Si0.75Ge0.25/8 nm-Si/1.3 nm-Si0.5Ge0.5 superlattice when the normal incident light wavelength is in the range of 500-1100 nm, which is quite remarkable because the optical anisotropy does not exist in bulk Si.

Spin-polarized transport in one-dimensional waveguide structures with spatially-periodic electronic and magnetic fields

We investigate theoretically the spin-polarized transport in one-dimensional waveguide structure with spatially-periodic electronic and magnetic fields. The interplay of the spin-orbit interaction and in-plane magnetic field significantly modifies the spin-dependent transmission and the spin polarization. The in-plane magnetic fields increase the strength of the Rashba spin-orbit coupling effect for the electric fields along y axis and decrease this effect for reversing the electric fields, even counteract the Rashba spin-orbit coupling effect. It is very interesting to find that we may deduce the strength of the Rashba effect through this phenomenon. (c) 2005 Elsevier Ltd. All rights reserved.