Mechanism study of femtosecond laser induced selective metallization (FLISM) on glass surfaces

We investigate the mechanism of selective metallization on glass surfaces with the assistance of femtosecond laser irradiation followed by electroless plating. Irradiation of femtosecond laser makes it possible to selectively deposit copper microstructures in the irradiated area on glass surfaces coated with silver nitrate films. The energy-dispersive X-ray (EDX) analyses reveal that silver atoms are produced on the surface of grooves formed by laser ablation, which serve as catalysis seeds for subsequent electroless copper plating. (C) 2008 Elsevier B.V. All rights reserved.

Fabrication of an integrated Raman sensor by selective surface metallization using a femtosecond laser oscillator

We demonstrate that a Raman sensor integrated with a micro-heater, a microfluidic chamber, and a surface-enhanced Raman scattering (SERS) substrate can be fabricated in a glass chip by femtosecond laser micromachining. The micro-heater and the SERS substrate are fabricated by selective metallization on the glass surface using a femtosecond laser oscillator, whereas the microfluidic chamber embedded in the glass sample is fabricated by femtosecond laser ablation using a femtosecond laser amplifier. We believed that this new strategy for fabricating multifunctional integrated microchips has great potential application for lab-on-a-chips. (C) 2008 Elsevier B.V. All rights reserved.

Selective metallization on insulator surfaces with femtosecond laser pulses

We report selective metallization on surfaces of insulators ( glass slides and lithium niobate crystal) based on femtosecond laser modification combined with electroless plating. The process is mainly composed of four steps: (1) formation of silver nitrate thin films on the surfaces of glass or crystal substrates; (2) generation of silver particles in the irradiated area by femtosecond laser direct writing; (3) removal of unirradiated silver nitrate films; and (4) selective electroless plating in the modified area. We discuss the mechanism of selective metallization on the insulators. Moreover, we investigate the electrical and adhesive properties of the copper microstructures patterned on the insulator surfaces, showing great potential of integrating electrical functions into lab-on-a-chip devices. (C) 2007 Optical Society of America.

Spectroscopic, and thermal studies of some new binuclear transition metal(II) complexes with hydrazone ligands containing acetoacetanilide and isoxazole

A new chelating ligand, 2-(2-(5-tert-butylisoxazol-3-yl)hydrazono)-N-(2,4-dimethylphenyl)-3-oxobutanamide (HL), and its four binuclear transition metal complexes, M-2(L)(2) (mu-OCH3)(2) [M = Ni(II), Co(II), Cu(II), Zn(II)], were synthesized using the procedure of diazotization, coupling and metallization. Their structures were postulated based on elemental analysis, H-1 NMR, MALDI-MS, FT-IR spectra and UV-vis electronic absorption spectra. Smooth films of these complexes on K9 glass substrates were prepared using the spin-coating method and their absorption properties were evaluated. The thermal properties of the metal(II) complexes were investigated by thermogravimetry (TG) and differential scanning calorimetry (DSC. Different thermodynamic and kinetic parameters namely activation energy (E

Nickel(II) and copper(II) complexes containing 2-(2-(5-substitued isoxazol-3-yl)hydrazono)-5,5-dimethylcyclohexane-1,3-dione ligands: Synthesis, spectral and thermal characterizations

Two new hydrazone chelating ligands, 2-(2-(5-methylisoxazol-3-yl)hydrazono)-5,5-dimethylcyclohexane-1,3-dione (HL1) and 2-(2-(5-tert-butylisoxazol-3-yl)hydrazono)-5,5-dimethylcyclohexane- 1,3-dione (HL2), and their nickel(II) and copper(II) complexes were synthesized using the procedure of diazotization, coupling and metallization. Their structures were postulated based on elemental analysis, H-1 NMR, ESI-MS, FT-IR spectra and UV-vis electronic absorption spectra. Smooth films of these complexes on K9 glass substrates were prepared using spin-coating and their absorption properties were evaluated. The thermal properties of the metal(II) complexes were investigated by thermogravimetry (TG) and differential thermogravimetry (DTG). Different thermodynamic and kinetic parameters namely activation energy (E

Formation of high reflective Ni/Ag/Ti/Au contact on p-GaN

A metallization scheme of Ni/Ag/Ti/Au has been developed for obtaining high reflective contacts on p-type GaN. In order to find optimal conditions to get a high reflectivity, we studied samples with various Ni thicknesses, annealing temperatures and annealing times. By annealing at 500 degrees C for 5 min in an O-2 ambient, a reflectivity as high as 94% was obtained from Ni/Ag/Ti/Au (1/120/120/50 nm). The effects of Ti layers on the suppression of Ag agglomeration were investigated by using Auger electron spectroscopy (AES). From AES depth profiles, it is clear that Ti acts as a diffusion barrier to prevent Au atoms from diffusing into the Ag layer, which is important in the formation of high reflectivity.

The study of high temperature annealing of a-SiC : H films

A series of amorphous silicon carbide films were prepared by plasma enhanced chemical vapor deposition technique on (100) silicon wafers by using methane, silane, and hydrogen as reactive resources. A very thin (around 15 A) gold film was evaporated on the half area of the aSiC:H films to investigate the metal induced crystallization effect. Then the a-SiC:H films were annealed at 1100 degrees C for 1 hour in the nitrogen atmosphere. Fourier transform infrared spectroscopy (FTIR), X-Ray diffraction (XRD), and scanning electron microscopy (SEM) were employed to analyze the microstructure, composition and surface morphology of the films. The influences of the high temperature annealing on the microstructure of a-SiC:H film and the metal induced metallization were investigated.

The study of high temperature annealing of a-SiC : H films

A series of amorphous silicon carbide films were prepared by plasma enhanced chemical vapor deposition technique on (100) silicon wafers by using methane, silane, and hydrogen as reactive resources. A very thin (around 15 A) gold film was evaporated on the half area of the aSiC:H films to investigate the metal induced crystallization effect. Then the a-SiC:H films were annealed at 1100 degrees C for 1 hour in the nitrogen atmosphere. Fourier transform infrared spectroscopy (FTIR), X-Ray diffraction (XRD), and scanning electron microscopy (SEM) were employed to analyze the microstructure, composition and surface morphology of the films. The influences of the high temperature annealing on the microstructure of a-SiC:H film and the metal induced metallization were investigated.

DNA-Templated Gold Nanoparticles Formation

The interaction between HAuCl4 and DNA has enabled creation of DNA-templated gold nanoparticles without formation of large nanoparticles. It was found that spheral DNA-HAuCl4 hybrid of 8.7 nm in diameter, flower-like DNA-HAuCl4 hybrid, nanoparticles chains and nanoparticles network of DNA-HAuCl4 hybrid could be obtained by varying the reaction conditions, including DNA concentration and reaction temperature. The intermediate product was investigated by shortening the reaction time of DNA and HAuCl4, and the obtained nanoparticles preserved a small DNA segment, which indicated that the reaction between DNA and HAuCl4 had a process.

Fabrication of silver nanoparticles ring templated by plasmid DNA

Silver nanoparticles ring was successfully fabricated by electrostatic assembling 4-aminothiophenol (4-ATP) capped silver nanoparticles on predefined extended circular plasmid pBR322 DNA. The silver nanoparticles ring which was about 1.5 mu m in length, and about 2.2 nm in height can be obtained by adjusting the reaction time. The normal Raman scattering spectra reveal that the 4-ATP has contacted with the silver nanoparticles by forming a strong Ag-S bond. The AFM data show that the assembly of 4-ATP capped silver nanoparticles on DNA is ordered.

卷绕式海绵材料真空磁控溅射镀膜设备的研制

本文介绍了海绵卷绕真空磁控溅射镀膜设备的结构及其特点,采用独特的传动机构,靶极结构及控制方式实现了海绵连续卷绕真空磁控溅射镀膜。

西秦岭晚古生代弧前盆地沉积与成矿作用

The Western Qinling Orogenie belt in the Taibai-Fengxian and Xihe-Lixian areas can be subdivided into three units structurally from north to south, which are the island-arc, forearc basin and accretionary wedge, respectively. The forearc basin developed in the Late Paleozoic mainly controls sedimentation and some larger lead-zinc and gold deposits in the western Qinling. Stratigraphically, the island arc is dissected into the Liziyuan Group, the Danfeng Group and the Luohansi Group. The metavolcanic rocks include basic, intermediate and acidic rocks, and their geochemistry demonstrates that these igneous rocks generated in an island arc. Where, the basalts are subalkaline series charactered by low-medium potassium, with enriched LREE, negative Eu anomaly, and positive Nd anomaly. Cr-content of volcanic rocks is 2-3 times higher than that of island arc tholeiite all over the world. In addition, the lightly metamorphosed accretionary wedge in the areas of Huixian, Chengxian, Liuba and Shiqun is dominated by terrigenous sediments with carbonatite, chert, mafic and volcanic rocks. The age of the wedge is the Late Palaeozoic to the Trassic, while previous work suggested that it is the Silurian. The Upper Paleozoic between the island arc belt and accretionary wedge are mainly the sediments filled in the fore arc basin. The fillings in the forearc basin were subdivided into the Dacaiotan Group, the Tieshan Group, the Shujiaba Group and the Xihanshui Group, previously. They outcropped along the southern margins of the Liziyuan Group. The Dacaotan Group, the Upper Devonian, is close to the island arc complex, and composed of a suite of red and gray-green thick and coarse terrestrial elastics. The Shujiaba Group, the Mid-Upper Devonian, is located in the middle of the basin, is mainly fine-grained elastics with a few intercalations of limestone. The Xihanshui Group, which distributes in the southern of the basin, is mainly slates, phyllites and sandstones with carbonatite and reef blocks. The Tieshan Group, the Upper Devonian, just outcrops in the southwest of the basin, is carbonatite and clastic rocks, and deposited in the shallow -sea environment. The faults in the basin are mainly NW trend. The sedimentary characteristics, slump folds, biological assemblages in both sides of and within those faults demonstrate that they were syn-sedimentary faults with multi-period activities. They separated the forearc basin into several sub-basins, which imbricate in the background of a forearc basin with sedimentary characteristics of the piggyback basin. The deep hydrothermal fluid erupted along the syn-sedimentary faults, supported nutrition and energy for the reef, and resulted in hydrothermal-sedimentary rocks, reef and lead-zinc deposits along these faults. The sedimentary facies in the basin varies from the continental slope alluvial fan, to shallow-sea reef facies, and then to deep-water from north to south, which implies that there was a continental slope in the Devonian in the west Qinling. The strata overlap to north and to east respectively. Additionally, the coeval sedimentary facies in north and south are significantly different. The elastics become more and more coarser to north in the basin as well as upward coarsing. These features indicate prograding fillings followed by overlaps of the different fans underwater. The paleocurrent analyses show that the forearc basin is composed of thrust-ramp-basins and deep-water basins. The provenance of the fillings in the basin is the island arc in the north. The lead-zinc deposits were synchronous with the Xihanshui Group in the early stage of development of the forearc basin. They were strongly constrained by syn-sedimentary faults and then modified by the hydrothermal fluids. The gold deposits distributed in the north of the basin resulted from the tectonic activities and magmatism in the later stage of the basin evolution, and occurred at the top of the lead-zinc deposits spatially. The scales of lead-zinc deposits in the south of the basin are larger than that of the gold-deposits. The Pb-Zn deposits in the west of the basin are larger than those in the east, while the Gold deposits in the west of the basin are smaller than those in the east. Mineralizing ages of these deposits become younger and younger to west.