Laser cooling of rubidium atoms from background vapor in diffuse light

In this paper we describe an experiment on laser cooling of Rb-87 atoms directly from a vapor background in diffuse light. Diffuse light is produced in a ceramic integrating sphere by multiple scattering of two laser beams injected through multimode fibers. A probe beam, whose propagation direction is either horizontal or vertical, is used to detect cold atoms. We measured the absorption spectra of the cold atoms by scanning the frequency of the probe beam, and observed both the absorption signal and the time of flight signal after we switched off the cooling light, from which we estimated the temperature and the number of cold atoms. This method is clearly attractive for building a compact cold atom clock.

Generation of optimized wavelength-tunable optical pulse from an uncooled gain-switched Fabry-Perot semiconductor laser using optical amplifier as external light injection

We present a novel system design that can generate the optimized wavelength-tunable optical pulse streams from an uncooled gain-switched Fabry-Perot semiconductor laser using an optical amplifier as external light source. The timing jitter of gain-switched laser has been reduced from about 3 ps to 600 fs and the pulse width has been optimized by using our system. The stability of the system was also experimentally investigated. Our results show that an uncooled gain-switched FP laser system can feasibly produce the stable optical pulse trains with pulse width of 18 ps at the repetition frequency of 5 GHz during 7 h continuous working. We respectively proved the system feasibility under 1 GHz, 2.5 GHz and 5 GHz operation. (c) 2008 Elsevier B.V. All rights reserved.

Generating monoenergetic heavy-ion bunches with laser-induced electrostatic shocks

A method for efficient laser acceleration of heavy ions by electrostatic shock is investigated using particle-in-cell (PIC) simulation and analytical modeling. When a small number of heavy ions are mixed with light ions, the heavy ions can be accelerated to the same velocity as the light ions so that they gain much higher energy because of their large mass. Accordingly, a sandwich target design with a thin compound ion layer between two light-ion layers and a micro-structured target design are proposed for obtaining monoenergetic heavy-ion beams.

Near dipole-dipole effects on the propagation of few-cycle pulse in a dense two-level medium

The propagation behaviors, which include the carrier-envelope phase, the area evolution and the solitary pulse number of few-cycle pulses in a dense two-level medium, are investigated based on full-wave Maxwell-Bloch equations by taking Lorentz local field correction (LFC) into account. Several novel features are found: the difference of the carrier-envelope phase between the cases with and without LFC can go up to pi at some location; although the area of ultrashort solitary pulses is lager than 2 pi, the area of the effective Rabi frequency, which equals to that the Rabi frequency pluses the product of the strength of the near dipole-dipole (NDD) interaction and the polarization, is consistent with the standard area theorem and keeps 2 pi; the large area pulse penetrating into the medium produces several solitary pulses as usual, but the number of solitary pulses changes at certain condition. (C) 2005 Optical Society of America.

Coherent spectroscopy of the Rb-87 Fg=1 -> F-e=0 closed transition

This paper has observed linewidth narrowing of dark states in rubidium cell by using the Hanle configuration. The reduction of the coherent resonance width under the transition of Rb-87 F-g = 1 -> F-e = 0 is observed and the qualitative explanation about its mechanism is presented. Multiple subnatural width dips are obtained with a linearly polarized laser beam for the transition of Rb-87 F-g = 0, 1, 2. The feature of negative and positive slope, namely dispersionlike feature, is observed in the transmitted light.

纳米ZnO粉末中随机激光现象

实验采用三倍频Nd：YAG（波长355nm，脉宽8ns，频率30Hz）脉冲激光器作为抽运光源，在ZnO纳米粉末（直径～100nm）中发现了类似激光现象．并用环形腔理论模拟了ZnO的颗粒密度对平均自由程的影响，从理论上证明在纳秒级激光器的抽运下，ZnO纳米粉末也可以发射激光．

Spectral hole-burning of Eu3+: Y2SiO5 crystal at 579.62 mm

By using an Ar+ ion laser, a tunable Rh 6G dye laser(Linewidth : 0.5 cm(-1)) and a Coherent 899-21 dye laser as light sources and using a monochromator and a phase-locking amplifier, the optical properties of Eu3+ : Y2SiO5 crystal were detected. Persistent spectral hole burning (PSHB) were also observed in (5)Do-(7)Fo transition in the crystal at the temperature of 16 K. For 15 mW dye laser (Wavelength : 579.62 nm) burning the crystal for 0.1 s a spectral hole with about 80 MHz hole width were detected and the hole can been keep for longer than 10 h.

The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy

Wurtzite single crystal GaN films have been grown onto a gamma-Al2O3/Si(001) substrate in a horizontal-type low pressure MOVPE system. A thin gamma-Al2O3 layer is an intermediate layer for the growth of single crystal GaN on Si although it is only an oriented polycrystal film as shown by reflection high electron diffraction. Moreover, the oxide is not yet converted to a fully single crystal film, even at the stage of high temperature for the GaN layer as studied by transmission electron microscopy. Double crystal x-ray linewidth of (0002) peak of the 1.3 mu m sample is 54 arcmin and the films have heavy mosaic structures. A near band edge peaking at 3.4 eV at room temperature is observed by photoluminescence spectroscopy. Raman scattering does not detect any cubic phase coexistence.

Growth and characterization of GaN on LiGaO2 and LiAlO2

The nearly lattice-matched LiGaO2 and LiAlO2 substrates have been used for the growth of GaN by LP-MOVPE. GaN epilayers have been grown on the two substrates at very low input partial pressure of hydrogen and relatively low growth temperature. The difference in the growth rate, crystal and optical qualities of hexagonal GaN epilayers grown on LiAlO2 and LiGaO2 substrate with two polar domains are investigated. LiAlO2 and LiGaO2 single crystal with a single domain structure and an adequate surface plane are promising substrates for the growth of high quality of hexagonal GaN thin films.

Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD

Unintentionally doped and Si-doped single crystal n-GaN films have been grown on alpha-Al2O3 (0001) substrates by LP-MOCVD. Room temperature photoluminescence measurement showed that besides the bandedges, the spectrum of an undoped sample was a broad deep-level emission band peaking from 2.19 to 2.30eV, whereas the spectrum for a Si-doped sample was composed of a dominant peak of 2.19eV and a shoulder of 2.32eV. At different temperatures, photoconductance buildup and its decay were also observed for both samples.. The likely origins of persistent photoconductivity and yellow luminescence, which might be associated with deep defects inclusive of either Ga vacancy(V-Ga)/Ga vacancy complex induced by impurities or N antisite (N-Ga), will be proposed.

ZnO Nanorods as Scatterers for Random Lasing Emission from Dye Doped Polymer Films

A random lasing emission from 4-(dicy-anomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) doped polystyrene (PS) thin films was realized by the scattering role of ZnO nanorods. The device was fabricated by spin-coating DCJTB doped PS on ZnO nanorods. The ZnO nanorods were grown on indium-tin-oxide (ITO) glass substrate by hydrothermal synthesis method. It can be seen that the device emits a resonance multimode peak at center wavelength of 630 nm with a mode line-width of less than 0.23 nm and exhibits threshold excitation intensity as low as 0.375 mJ pulse(-1) cm(-2). The agreement of the dependence of threshold pumped intensity on the excitation area with the random laser theory indicates that the lasing emission realized here is random laser. Our results demonstrate that the nanostructured ZnO nanorods are promising candidate as alternative sources of coherent light emission to realize organic lasers.

Nonlinear spectroscopy of cold atoms in diffuse laser light

The nonlinear spectroscopy of cold atoms in the diffuse laser cooling system is studied in this paper. We present the theoretical models of the recoil-induced resonances (RIR) and the electromagnetically-induced absorption (EIA) of cold atoms in diffuse laser light, and show their signals in an experiment of cooling Rb-87 atomic vapor in an integrating sphere. The theoretical results are in good agreement with the experimental ones when the light intensity distribution in the integrating sphere is considered. The differences between nonlinear spectra of cold atoms in the diffuse laser light and in the optical molasses are also discussed. (c) 2009 Optical Society of America

Laser ranging based on electro-optic switch

Based on electro-optic switch effect in crystal, a novel laser ranging method is proposed. CW-laser emitted by laser transmitter propagates forward to the measured target, after being reflected by the target, and then goes back to the transmitter. Close to the transmitter, a special mono-block LiNbO3 crystal is added into the round-trip light beams. High-voltage pulses with the sharp enough changes in rising edges are loaded on the crystal. Based on electro-optic effect, double refraction and internal double reflection effect in crystal, the crystal cuts off the round-trip light beams, and reflects a light pulse cut out by the crystal to a detector aside from the original beam path. The pulse width T is the period that laser propagates forward and back between the crystal and the target. The feasibility of the new idea is proved by our experiments and a brand-new way for the laser ranging is provided. (c) 2005 Elsevier GmbH. All rights reserved.