Theoretical and experimental research on time-optimal trajectory planning and control of industrial robots

提出了一种用于工业机器人时间最优轨迹规划及轨迹控制的新方法，它可以确保在关节位移、速度、加速度以及二阶加速度边界值的约束下，机器人手部沿笛卡尔空间中规定路径运动的时间阳短。在这种方法中，所规划的关节轨迹都采用二次多项式加余弦函数的形式，不仅可以保证各关节运动的位移、速度 、加速度连续而且还可以保证各关节运动的二阶加速度连续。采用这种方法，既可以提高机器人的工作效率又可以延长机器人的工作寿命以PUMA560机器人为对象进行了计算机仿真和机器人实验，结果表明这种方法是正确的有效的。它为工业机器人在非线性运动学约束条件下的时间最优轨迹规划及控制问题提供了一种较好的解决方案。

基于现场总线的工业机器人联网

本文根据国内工业机器人技术开发和应用现状及其技术发展趋势 ,进行了基于现场总线的工业机器人联网技术的研究和开发 ,并将机器人作为生产线底层设备 ,实现了工业机器人网络的互联 .本文介绍了这个系统的硬件结构、上位监控机软件实现、控制器软件实现以及系统完成的功能 .

基于波扩散方法的工业机器人路径规划

为避免繁琐的机器人示教过程,提出一种离线的基于波扩散方法的工业机器人路径规划算法．首先对机器人的工作空间离散化,针对工作空间中的障碍点和自由点进行二值标记;然后用波扩散方法对自由点进一步标记,并进行了路径搜索;最后,对波扩散法与深度优先算法路径搜索进行了比较．将该算法用于6-自由度工业机器人的仿真实验,得到了满意的效果．

一个多智能体机器人协作装配系统

介绍了一个基于多智能体概念实现的多机器人协作装配系统——ＭＲＣＡＳ（Ｍｕｌｔｉ－ＲｏｂｏｔＣｏｏｐｅｒａｔｉｖｅＡｓｓｍｂｌｙＳｙｓｔｅｍ）。该系统由组织级计算机、三台工业机器人和一台全方位移动小车（ＯＤＶ）组成，采用分层递阶体系结构。利用ＭＲＣＡＳ系统进行了多机器人协作装配的实验：在ＯＤＶ装配平台上，四台机器人合作装配一个大型桁架式工件。该工件具有多种装配构型，但任何一台机器人不能独立完成装配。

Effects of Thermocapillary Convection on the Growth Process in Industrial 8-inch Silicon Czochralski Growth

Czochralski (CZ) crystal growth process is a widely used technique in manufacturing of silicon crystals and other semiconductor materials. The ultimate goal of the IC industry is to have the highest quality substrates, which are free of point defect, impurities and micro defect clusters. The scale up of silicon wafer size from 200 mm to 300 mm requires large crucible size and more heat power. Transport phenomena in crystal growth processes are quite complex due to melt and gas flows that may be oscillatory and/or turbulent, coupled convection and radiation, impurities and dopant distributions, unsteady kinetics of the growth process, melt crystal interface dynamics, free surface and meniscus, stoichiometry in the case of compound materials. A global model has been developed to simulate the temperature distribution and melt flow in an 8-inch system. The present program features the fluid convection, magnetohydrodynamics, and radiation models. A multi-zone method is used to divide the Cz system into different zones, e.g., the melt, the crystal and the hot zone. For calculation of temperature distribution, the whole system inside the stainless chamber is considered. For the convective flow, only the melt is considered. The widely used zonal method divides the surface of the radiation enclosure into a number of zones, which has a uniform distribution of temperature, radiative properties and composition. The integro-differential equations for the radiative heat transfer are solved using the matrix inversion technique. The zonal method for radiative heat transfer is used in the growth chamber, which is confined by crystal surface, melt surface, heat shield, and pull chamber. Free surface and crystal/melt interface are tracked using adaptive grid generation. The competition between the thermocapillary convection induced by non-uniform temperature distributions on the free surface and the forced convection by the rotation of the crystal determines the interface shape, dopant distribution, and striation pattern. The temperature gradients on the free surface are influenced by the effects of the thermocapillary force on the free surface and the rotation of the crystal and the crucible.