25 resultados para impact ionization

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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We have performed an experiment on near threshold double ionization of helium by 106 eV electron impact with an improved reaction microscope. In this experiment the momenta of three particles after ionization were measured, and the information on correlation of emitted electrons was obtained. Detailed descriptions of the experimental setup and the methods of reconstruction of electron momentum were given. We focused on the analysis of momentum and energy distributions and the angular correlation of the emitted electrons. The experimental results were compared with Wannier's prediction, and it was found that the experimental results showed some characteristic features predicted by Wannier theory.

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We address the influence of the orbital symmetry and the molecular alignment with respect to the laser-field polarization on laser-induced nonsequential double ionization of diatomic molecules, in the length and velocity gauges. We work within the strong-field approximation and assume that the second electron is dislodged by electron-impact ionization, and also consider the classical limit of this model. We show that the electron-momentum distributions exhibit interference maxima and minima due to electron emission at spatially separated centers. The interference patterns survive integration over the transverse momenta for a small range of alignment angles, and are sharpest for parallel-aligned molecules. Due to the contributions of the transverse-momentum components, these patterns become less defined as the alignment angle increases, until they disappear for perpendicular alignment. This behavior influences the shapes and the peaks of the electron-momentum distributions.

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A theoretical model is proposed to describe the microscopic processes involved in the ablation in fused silica induced by femtosecond-laser pulse. Conduction-band electron (CBE) can absorb laser energy, the rate is calculated by quantum mechanical method and classical method. CBE is produced via photoionization (PI) and impact ionization (II). The PI and II rates are calculated by using the Keldysh theory and double-flux model, respectively. Besides the CBE production, we investigate laser energy deposition and its distribution. The equation of energy diffusion in physical space is resolved numerically. Taking energy density E-dep=54 kJ/cm(3) as the criterion, we calculate damage threshold, ablation depth, and ablation volumes. It is found that if energy diffusion is considered, energy density near sample surface is reduced to 1/10, damage threshold is enhanced more than 30%, ablation depth is increased by a factor of 10. Our theoretical results agree well with experimental measurements. Several ultrafast phenomena in fused silica are also discussed. (C) 2004 American Institute of Physics.

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A new pump and probe experimental system was developed, the pump pulse duration of which is stretched and is much longer than that of the probe pulse. Using this system, time-resolved electronic excitation processes and damage mechanisms in CaF2 crystals were studied. The measured reflectivity of the probe pulse begins to increase at the peak of the pump pulse and increases rapidly in the latter half of the pump pulse, when the pump pulse duration is stretched to 580fs. Our experimental results indicate that both multiphoton ionization and impact ionization play important roles in the generation of conduction band electrons, at least they do so when the pump pulse durations are equal to or longer than 580fs.

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激光照射下光学材料的损伤过程中,导带电子的加热和碰撞电离是非常重要的过程,影响着导带电子的产生、晶格能量的沉积和破坏.分析了Drude模型的局限性,从经典力学出发求解了周期量级激光场中导带电子的运动方程,计算了导带电子的光吸收和碰撞电离,分析了激光强度、载波相位等对碰撞电离的影响.

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通过对飞秒激光在空气中产生的等离子体通道两端外加高压,来研究通道的寿命变化情况。实验得到,当在等离子体通道两端外加高压时(350 kV/m),等离子体通道寿命延长了近3倍。理论模拟和分析结果表明在外加电场条件下,碰撞电离得到增强,吸附作用相对减弱,解离复合系数随着电子平均能量的增加而下降的趋势更为剧烈,这进一步引起了等离子体通道寿命的延长。实验结果与理论分析共同表明了利用外加电场对空气中激光等离子体通道寿命进行延长的可行性。

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The damage mechanisms and micromachining of 6H SiC are studied by using femtosecond laser pulses at wavelengths between near infrared (NIR) and near ultraviolet (NUV) delivered from an optical parametric amplifier (OPA). Our experimental results indicate that high quality microstructures can be fabricated in SiC crystals. On the basis of the dependence of the ablated area and the laser pulse energy, the threshold fluence of SiC is found to increase with the incident laser wavelength in the visible region, while it remains almost constant for the NIR laser. For the NIR laser pulses, both photoionization and impact ionization play important roles in electronic excitation, while for visible lasers, photoionization plays a more important role.

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The damage in fused silica and CaF2 crystals induced by wavelength tunable femtosecond lasers is studied. The threshold fluence is observed to increase rapidly with laser wavelength lambda in the region of 250-800 nm, while it is nearly a constant for 800 impact ionization plays an important role in the generation of conduction band electrons (CBEs). We study the CBEs absorption via subconduction-band (sub-CB) transition, and develop a coupled avalanche model. Our results indicate that the CBEs absorption via sub-CB transition plays an important role in the damage in dielectrics irradiated by the visible and near ultraviolet femtosecond lasers. Our theory explains well the experiments.

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Damage threshold of crystals SiO2 and YAG against 60-900 fs, 800 nm laser pulses are reported. The breakdown mechanisms were discussed based on the double-flux model and Keldysh theory. We found that impact ionization plays the important role in the femtosecond laser-induced damage in crystalline SiO2, while the roles of photoionization and impact ionization in YAG crystals depend on the laser pulse durations. (C) 2007 Elsevier B.V. All rights reserved.

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Two kinds of HfO2/SiO2 800 nm high-reflective (HR) coatings, with and without SiO2 protective layer were deposited by electron beam evaporation. Laser-induced damage thresholds (LIDT) were measured for all samples with femtosecond laser pulses. The surface morphologies and the depth information of all samples were observed by Leica optical microscopy and WYKO surface profiler, respectively. It is found that SiO2 protective layer had no positive effect on improving the LIDT of HR coating. A simple model including the conduction band electron production via multiphoton ionization and impact ionization is used to explain this phenomenon. Theoretical calculations show that the damage occurs first in the SiO2 protective layer for HfO2/SiO2 HR coating with SiO2 protective layer. The relation of LIDT for two kinds of HfO2/SiO2 HR coatings in calculation agrees with the experiment result. (c) 2006 Elsevier B.V. All rights reserved.

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用电子柬蒸发的方法在BK7玻璃上制备了ZrO2单层膜和ZrO2/SiO2高反膜,利用掺Ti:sapphire飞秒激光系统输出的中心波长为800nm,脉宽为50fs的激光脉冲对这两种样品进行了激光损伤阈值测试.实验结果表明,ZrO2单层膜的阂值比ZrO2/SiO2高反膜的高;这与传统的纳秒脉冲激光的损伤情况相反.利用光离化和碰撞离化激发电子到导带,形成电子等离子体基本模型并对此现象进行了解释.同时,用显微镜对样品的损伤形貌进行了观测,对损伤的特点进行了表征.

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The fragmentations of three bifunctional phenylether compounds including 2-(2, 6-dichloro)phenoxyl propionitrile, N-hydroxyl-4-butoxyl phenylacetyl amine(bufexamc) and 2-(1-methylethoxyl) phenol methylcarbamate (Propoxur) under electron impact ionization were reported, Metastable ion(MI) and collision-induced dissociation(CID) at a low energy have been used to study the fragmentation pathways from molecular ions. Apart from the simple bond cleavages, and the unimolecular dissociations via ion/neutral complex intermediate as a competitive mechanism were demonstrated, Moreover, the intramolecular hydrogen transfer and double hydrogen transfers in the fragmentations of these compounds were discussed in detail.