Femtosecond laser ablation of crystals SiO2 and YAG


Autoria(s): Xu Shizhen; 邱建荣; 贾天卿; Li Chengbin; Sun Haiyi; 徐至展
Data(s)

2007

Resumo

Damage threshold of crystals SiO2 and YAG against 60-900 fs, 800 nm laser pulses are reported. The breakdown mechanisms were discussed based on the double-flux model and Keldysh theory. We found that impact ionization plays the important role in the femtosecond laser-induced damage in crystalline SiO2, while the roles of photoionization and impact ionization in YAG crystals depend on the laser pulse durations. (C) 2007 Elsevier B.V. All rights reserved.

Identificador

http://ir.siom.ac.cn/handle/181231/968

http://www.irgrid.ac.cn/handle/1471x/9838

Idioma(s)

英语

Fonte

Xu Shizhen;邱建荣;贾天卿;Li Chengbin;Sun Haiyi;徐至展.,Opt. Commun.,2007,274(1):163-166

Palavras-Chave #avalanche ionization #photoionization #femtosecond laser #damage threshold #SiO2 #YAG
Tipo

期刊论文