Effects of high-frequency vibration on critical marangoni number

The influence of vibration on thermocapillary convection and critical Marangoni number in liquid bridge of half floating zone was discussed for the low frequency range 0.4-1.5 Hz and the intermediate frequency range 2.5-15 Hz in our previous papers. This paper extends the study to high frequency range 15-100Hz. This ground based experiment was completed on the deck of an electromagnetic vibration machine. The results of our experiment shows when the frequency of the applied acceleration is high enough, the amplitude of the time varying part of the temperature response is disappear and the shape of the free surface of the liquid bridge exhibits no fluctuations due to inertia. The critical Marangoni number which is defined to describe the transitions from a peroidical convection in response to vibration to an oscillatory convection due to internal instability is nearly the same as the critical Marangoni number for oscillatory flow in the absence of vibration.

Simultaneous production of low- and high-frequency sounds by neonatal finless porpoises

Phocoenids are generally considered to be nonwhistling species that produce only high-frequency pulsed sounds. Here our results show that neonatal finless porpoises (Neophocaena phocaenoides) frequently produce clear low-frequency (2-3 kHz) pulsed signals, without distinct high-frequency energy, just after birth and can produce both low- (2-3 kHz) and high-frequency (>100 kHz) pulsed signals simultaneously until about 20 days postnatal. The results indicate that low-frequency signals of neonatal finless porpoises are not an early form of high-frequency signals and suggest that low- and high-frequency signals may be produced by different sound production mechanisms. (C) 2008 Acoustical Society of America.

High-frequency characterization of packaging network in to-can photodiode modules

A simple method for analyzing the effects of TO packaging network on the high-frequency response of photodiode modules is presented. This method is established based on the relations of the scattering parameters of the packaging network, photodiode chip, and module. It is shown that the results obtained by this method agree well with those obtained by the conventional comparison method. The proposed method is much more convenient since only the electrical domain measurements are required. (C) 2008 Wiley Periodicals, Inc.

Silicon bench for passive coupling and packaging of high-frequency optoelectronic devices

Coupling and packaging have become decisive factors in the final performance and cost of high-frequency optoelectronic devices. Here, we report the design and successful fabrication of a silicon bench that integrates a V-groove and high-frequency coplanar waveguide (CPW) on the same high-resistivity silicon wafer as an effective optoelectronic packaging solution.

High-frequency hydrogen-related infrared modes in silicon grown in a hydrogen atmosphere

High-frequency vibrational modes have been observed at liquid-helium temperature in silicon samples grown in a H-2 or D-2 atmosphere. The highest-frequency ones are due to the overtones and combination modes of SiH fundamentals. Others are CH modes due to (C,H) complexes, but the simultaneous presence of NH modes due to (N,H) complexes cannot be excluded. The present results seem to show also the existence of centers including both SiH and CH or NH bonds. One sharp mode at 4349 cm-l is related to a weak SiH fundamental at 2210 cm(-1). The related center is ascribed to a vacancy fully decorated with hydrogen with a nearest-neighbor C atom. [S0163-1829(99)00911-X].

High-frequency ferromagnetic resonance on ultrafine cobalt particles

We report on high-frequency (300-700 GHz) ferromagnetic resonance (HF-FMR) measurements on cobalt superparamagnetic particles with strong uniaxial effective anisotropy. We derive the dynamical susceptibility of the system on the basis of an independent-grain model by using a rectangular approach. Numerical simulations give typical line shapes depending on the anisotropy, the gyromagnetic ratio, and the damping constant. HF-FMR experiments have been performed on two systems of ultrafine cobalt particles of different sizes with a mean number of atoms per particles of 150 +/- 20 and 310 +/- 20. In both systems, the magnetic anisotropy is found to be enhanced compared to the bulk value, and increases as the particle size decreases, in accordance with previous determinations from magnetization measurements. Although no size effect has been observed on the gyromagnetic ratio, the transverse relaxation time is two orders of magnitude smaller than the bulk value indicating strong damping effects, possibly originating from surface spin disorders.

Thermovibrational Instability Of Rayleigh-Marangoni-Benard Convection In Two-Layer Fluid Systems

The thermovibrational instability of Rayleigh-Marangoni-Benard convection in a two-layer system under the high-frequency vibration has been investigated by linear instability analysis in the present paper. General equations for the description of the convective flow and within this framework, the generalized Boussinesq approximation are formulated. These equations are dealt with using the averaging method. The theoretical analysis results show that the high-frequency thermovibrations can change the Marangoni-Benard convection instabilities as well as the oscillatory gaps of the Rayleigh-Marangoni-Benard convection in two-layer liquid systems. It is found that vertical high-frequency vibrations can delay convective instability of this system, and damp the convective flow down. (C) 2007 COSPAR. Published by Elsevier Ltd. All rights reserved.

Wave propagation and the frequency domain Green's functions in viscoelastic Biot/squirt (BISQ) media

In this paper, we examine the characteristics of elastic wave propagation in viscoelastic porous media, which contain simultaneously both the Biot-flow and the squirt-flow mechanisms (BISQ). The frequency-domain Green's functions for viscoelastic BISQ media are then derived based on the classic potential function methods. Our numerical results show that S-waves are only affected by viscoelasticity, but not by squirt-flows. However, the phase velocity and attenuation of fast P-waves are seriously influenced by both viscoelasticity and squirt-flows; and there exist two peaks in the attenuation-frequency variations of fast P-waves. In the low-frequency range, the squirt-flow characteristic length, not viscoelasticity, affects the phase velocity of slow P-waves, whereas it is opposite in the high-frequency range. As to the contribution of potential functions of two types of compressional waves to the Green's function, the squirt-flow length has a small effect, and the effects of viscoelastic parameter are mainly in the higher frequency range. Crown Copyright (C) 2006 Published by Elsevier Ltd. All rights reserved.

Floating zone convection

The microgravity research, as a branch of the advanced sciences and a spe- cialized field of high technology, has been made in China since the late 1980's. The research group investigating microgravity fluid physics consisted of our col- leagues and the authors in the Institute of Mechanics of the Chinese Academy of Sciences (CAS), and we pay special attention to the floating zone convection as our first research priority. Now, the research group has expanded and is a part of the National Microgravity Laboratory of the CAS, and the research fields have been extended to include more subjects related to microgravity science. Howev- er, the floating zone convection is still an important topic that greatly holds our research interests.

Overall optimization of high-speed semiconductor laser modules

Based on the high frequency techniques such as frequency response measurement, equivalent circuit modeling and packaging parasitics compensation, a comprehensive optimization method for packaging high-speed semiconductor laser module is presented in this paper. The experiments show that the small-signal magnitude frequency response of the TO packaged laser module is superior to that of laser diode in frequencies, and the in-band flatness and the phase-frequency linearity are also improved significantly.

Frequency dependence of junction capacitance of GaN p-i-n UV detectors

In this paper frequency dependence of small-signal capacitance of p-i-n UV detectors, which were fabricated on GaN grown on sapphire substrate by metalorganic chemical vapor deposition, has been studied. The Schibli-Milnes model was used to analyze the capacitance-frequency characteristics. According to high frequency C-V measurements, the deep level mean concentration is about 2.98 x 10(20) cm(-3). The deep level is caused by the un-ionised Mg dopant. The calculated Mg activation energy is 260 meV and the hole thermal capture cross section of the deep level is about 2.73 x 10(-22) cm(2). The applicability of the Schibli-Milnes model is also discussed when the concentration of deep levels exceeds that of the heavily doped n-side. It is concluded that the analytic expression of the Schibli-Milnes model can still be used to describe the capacitance-frequency characteristics of GaN p-i-n UV detectors in good agreement with experiment. (c) 2005 Elsevier Ltd. All rights reserved.

High-power electroabsorption modulator for radio over fibre system

An electroabsorption modulator using an intra-step quantum well (IQW) active region is fabricated for a radio over fibre system. The strain-compensated InGaAsP/InGaAsP IQW shows good material quality and improved modulation properties, high extinction ratio efficiency (10 dB V-1) and low capacitance (< 0.42 pF), with which high frequency (> 15 GHz) can be obtained. High-speed measurement under high-power excitation shows no power saturation up to an excitation power of 21 dBm. To our knowledge, the input optical power is the highest reported for a multi-quantum well EAM without a heat sink.

High-power electroabsorption modulator using intrastep quantum well

An electroabsorption modulator using the intrastep quantum well (IQW) active region is fabricated for optical network systems. The strain-compensated InGaAsP/InGaAsP IQW shows good material quality and improved modulation properties, high extinction ratio elliciency 10 dB/V and low capacitance (< 0.42 pF), with which an ultra high frequency (> 15 GHz) can be obtained. High-speed measurement under high-power excitation shows no power saturation up to excitation power of 21 dBm. To our knowledge, the input optical power is the highest reported for multi-quantum well EAMs without heat sinks.

Characterization of parasitics in TO-packaged high-speed laser modules

An elaborate analysis of the parasitic network of high-speed through-hole packaging (TO)-type laser modules is presented using a small-signal equivalent circuit model. The intrinsic laser diode is obtained using the optical modulation technique, and is embedded into the model as a separate component. Three step-by-step measurements are made for determining the packaging parasitic network, including the test fixture, TO header, submount, bonding wire, and parasitics of the laser chip. A good agreement between simulated and measured results confirms the validation and accuracy of the characterization procedures. Furthermore, several key parasitic elements are found based on the simulation of the high-frequency responses of the packaged devices. It is expected that the 3-dB bandwidth of 12 GHz or more of the low-cost TO packaged laser module may be achieved using the proposed optimization method.