Frequency upconversion properties of Er3+/Yb3+-codoped lead-germanium-bismuth oxide glasses

The frequency upconversion properties of Er3+/Yb3+-codoped heavy metal oxide lead-germanium-bismuth oxide glasses under 975 mn excitation are investigated. Intense green and red emission bands centered at 536, 556 and 672 run, corresponding to the H-2(1/2) --> I-4(15/2), S-4(3/2) --> I-4(15/2) and F-4(9/2) -->I-4(15/2) transitions of Er3+, respectively, were simultaneously observed at room temperature. The influences of PbO on upconversion intensity for the green (536 and 556 nm) and red (672 nm) emissions were compared and discussed. The optimized rare earth doping ratio of Er3+ and Yb3+, is 1:5 for these glasses, which results in the stronger upconversion fluorescence intensities. The dependence of intensities of upconversion emission on excitation power and possible upconversion mechanisms were evaluated and analyzed. The structure of glass has been investigated by means of infrared (IR) spectral analysis. The results indicate that the Er3+/Yb3+-codoped heavy metal oxide lead-germanium-bismuth oxide glasses may be a potential materials for developing upconversion fiber optic devices. (C) 2006 Published by Elsevier Ltd.

Effect of oxygen substitution by halide ions on structure, thermal stability and upconversion fluorescence in Er3(+)/Yb3(+)-codoped germanium-bismuth glasses

For the first time. effect of halide ions (F-, Cl-, Br-, and I-) introduction on structure, thermal stability, and upconversion fluorescence in Er3+/Yb3+-codoped oxide-halide germanium-bismuth glasses has been systematically investigated. The results show that halide ions modified germanium-bismuth glasses have lower maximum phonon energy and phonon density, worse thermal stability. longer measured lifetimes of I-4(l1/2) level, and stronger upconversion emission than germanium-bismuth glass. All these results indicate that halide ions play an important role in the formation of glass network, and have an important influence on the upconversion luminescence. The possible upconversion mechanisms of Er3+ ion are also evaluated. © 2005 Elsevier Ltd. All rights reserved.

Fluorescence lifetime increasing with F- ions into ytterbium-doped germanium-lead-tellurite glasses

The effects of F- ions in a germanium-lead-tellurite glass system oil the spectral and potential laser properties of the Yb3+ are investigated. The absorption spectra, lifetimes, the emission cross-sections and the minimum pump intensities of the glass system with and without F- ions have been measured and calculated. The results show that the fluorescence lifetime and the minimum pump intensity of Yb3+ ions increase evidently, which indicates that germanium lead-oxyfluoride tellurite glass is a promising laser host matrix for high power generation. FT-IR spectra were used to analyse the effect of F- ions on OH- groups in this glass system. Analysis demonstrates that addition of fluoride removes the OH- groups and results in improvement of fluorescence lifetime of Yb3+.

Upconversion fluorescence property of Er3+/Yb3+-codoped novel bismuth-germanium glass

Infrared-to-visible upconversion fluorescence property of Er3+/Yb3+ codoped novel bismuth-germanium glass under 975 nm LD excitation has been studied. Intense green and red emissions centered at 525, 546 and 657 nm, corresponding to the transitions H-2(11/2) -> I-4(15/2), S-4(3/2) -> I-4(15/2), and F-4(9/2) -> I-4(15/2), respectively, were observed at room temperature. The quadratic dependence of the 525, 546 and 657 nm emissions on excitation power indicates that a two-photon absorption process occurs. The structure of the bismuth-germanium glass has been investigated by peak-deconvolution of FT-Raman spectrum, and the structural information was obtained from the peak wavenumbers. This novel bismuth-germanium glass with low maximum phonon energy (similar to 750 cm(-1)) can be used as potential host material for upconversion lasers. (c) 2005 Elsevier Ltd. All rights reserved.

Intense upconversion luminescence in ytterbium-sensitized thulium-doped novel oxychloride bismuth-germanium glass

Structural and up-conversion fluorescence properties in ytterbium-sensitized thulium-doped novel oxychloride bismuth-germanium glass have been studied. The structure of novel bismuth-germanium glass was investigated by peak-deconvolution of Raman spectrum, and the structural information was obtained from the peak wave numbers. The Raman spectrum investigation indicates that PbCl2 plays an important role in the formation of glass network, and has an important influence on the up-conversion luminescence. Intense blue and weak red emissions centered at 477 and 650 mn, corresponding to the transitions 1G(4) -> H-3(6) and (1)G(4) -> H-3(4), respectively, were observed at room temperature. The possible up-conversion mechanisms are discussed and estimated. This novel oxychloride bismuth-germanium glass with low maximum phonon energy (similar to 730 cm(-1)) can be used as potential host material for up-conversion lasers. (c) 2005 Elsevier Ltd. All rights reserved.

Structural and upconversion fluorescence properties of Er3+/Yb3+-codoped lead-free germanium-bismuth glass

We study the structural and infrared-to-visible upconversion fluorescence properties of Er3(+)/Yb3+-codoped lead-free germanium-bismuth glass. The structure of lead-free germanium-bismuth-lanthanum glass is investigated by peak-deconvolution of Raman spectroscopy. Intense green and red emissions centred at 525, 546, and 657nm, corresponding to the transitions H-2(11/2) -> (IT15/2)-I-4 -> S-4(3/2) -> 4I(15/2), and F-4(9/2) -> I-4(15/2), respectively, are observed at room temperature. The quadratic dependence of the 525, 546, and 657nm emissions on excitation power indicates that a two-photon absorption process occurs under 975nm excitation.

Structural and upconversion fluorescence properties of Er3+/Yb3+-codoped oxychloride lead-germanium-bismuth glass

Structural and infrared-to-visible upconversion fluorescence properties of Er3+/Yb3+-codoped oxychloride lead-germanium-bismuth glass have been studied. The Raman spectrum investigation indicates that PbCl2 plays an important role in the formation of glass network, and has an important influence on the upconversion luminescence owing to lower phonon energy. Intense green and red emissions centered at 525, 546, and 657 nm, corresponding to the transitions H-2(11/2)-->I-4(15/2,) I-4(3/2)-->I-4(15/2), and F-4(9/2)-->I-4(15/2), respectively, were observed at room temperature. The quadratic dependence of the 525, 546, and 657 nm emissions on excitation power indicates that a two-photon absorption process occurs under 975 nm excitation. (C) 2004 Elsevier Ltd. All rights reserved.

Optical transitions of Er3+ and Yb3+ ions in novel oxyfluoride bismuth-germanium glass: Observation of up-conversion

Er3+/Yb3+-codoped novel oxyfluoride bismuth-germanium glass was prepared and its up-conversion fluorescence property under 975 nm excitation has been studied. Intense green and weak red emissions centered at 525, 546, and 657 nm, corresponding to the transitions 2H(11/2) -> I-4(15/2), S-4(3/2) -> I-4(15/2), and F-4(9/2) -> I-4(15/2), respectively, were observed at room temperature. The possible up-conversion mechanism was also evaluated. The optimal Yb3+-Er3+ concentration ratio is found based on the direct lifetime measurements of excited levels for Er3+ ion. The structure of this novel oxyfluoride bismuth-germanium glass has been investigated by peak-deconvolution of FT-Raman spectrum, and the structural information was obtained from the peak wavenumbers. This novel oxyfluoride bismuth-germanium glass with relatively lower maximum phonon energy (similar to 731 cm(-1)) can be used as potential host material for up-conversion lasers. (c) 2005 Elsevier B.V. All rights reserved.

Comparative investigation of up-conversion luminescence in Tm3+/Yb3+-codoped germanate-niobic and germanium-bismuth glasses: effect of phonon density on up-conversion emission

Tm3+/Yb3+-codoped gernianate-niobic (GN) and germanium-bismuth (GB) glasses have been synthesized by conventional ruching and quenching method. Intense blue and weak red emissions centered at 477 and 650 nm, corresponding to the transitions (1)G(4)->H-3(6) and (1)G(4)->H-3(4), respectively, were observed at room temperature. The possible Up-conversion mechanisms are discussed and estimated. GN glass showed a weaker up-conversion emission than GB glass, which is inconsistent with the prediction from the difference of maximum phonon energy between GN and GB glasses. In this paper, Raman spectroscopy was employed to investigate the origin of the difference in up-conversion luminescence in the two glasses. Compared with phonon side-band spectroscopy, Raman spectroscopy extracts more information including both phonon energy and phonon density. For the first time, our results reveal that, besides the maximum phonon energy, the phonon density of host glasses is also an important factor in determining the up-conversion efficiency. (c) 2005 Elsevier Ltd. All rights reserved.

Green and red upconversion luminescence in ytterbium-sensitized erbrium-doped novel lead-free germanium bismuth lanthanum glass

Structural and infrared-to-visible upconversion fluorescence properties in ytterbium-sensitized erbrium-doped novel lead-free germanium bismuth-lanthanum glass have been studied. The structure of lead-free germanium-bismuth-lanthanum glass was investigated by peak-deconvolution of Raman spectrum, and the structural information was obtained from the peak wavenumbers. Intense green and red emissions centered at 525, 546, and 657 nm, corresponding to the transitions 2H(11/2) -> I-4(15/2), S-4(3/2) -> I-4(15/2), and F-4(9/2) -> I-4(15/2), respectively, were observed at room temperature. The quadratic dependence of the 525, 546, and 657 nm emissions on excitation power indicates that a two-photon absorption process occurs under 975 nm excitation. This novel lead-free germanium-bismuth-lanthanum glass with low maximum phonon energy (similar to 751 cm(-1)) can be used as potential host material for upconversion lasers. (c) 2005 Published by Elsevier B.V.

Investigations on bismuth and aluminum co-doped germanium oxide glasses for ultra-broadband optical amplification

The broadband luminescence covering 1.2-1.6 mu m was observed from bismuth and aluminum co-doped germanium oxide glasses pumped by 808 nm laser at room temperature. The spectroscopic properties of GeO2:Bi,Al glasses strongly depend on the glass compositions and the pumping sources. To a certain extent, the Al3+ ions play as dispersing reagent for the infrared-emission centers in the GeO2:Bi,Al glasses. The broad infrared luminescence with a full width at half maximum larger than 200 nm and a lifetime longer than 200 mu s possesses these glasses with the potential applications in broadly tunable laser sources and ultra-broadband fiber amplifiers in optical communication field. (c) 2005 Elsevier B.V. All rights reserved.

Superbroadband 1310 nm emission from bismuth and tantalum codoped germanium oxide glasses

Near-infrared broadband emission from bismuth-tantalum-codoped germanium oxide glasses was observed at room temperature when the glasses were pumped by an 808 nm laser diode. The emission band covered the 0, E, S, C, and L bands (1260-1625 nm), with a maximum peak at similar to 1310 nm, a FWHM broader than 400 nm, and a lifetime longer than 200 lis. The observed broadband luminescence was attributed to bismuth clusters in the glasses. Bismuth-tantalum-codoped germanium oxide glass might be promising as amplification media for broadly tunable lasers and wideband amplifiers in optical communications. (c) 2005 Optical Society of America.

Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate

We report a room temperature study of the direct band gap photoluminescence of tensile-strained Ge/Si0.13Ge0.87 multiple quantum wells grown on Si-based germanium virtual substrates by ultrahigh vacuum chemical vapor deposition. Blueshifts of the luminescence peak energy from the Ge quantum wells in comparison with the Ge virtual substrate are in good agreement with the theoretical prediction when we attribute the luminescence from the quantum well to the c Gamma 1-HH1 direct band transition. The reduction in direct band gap in the tensile strained Ge epilayer and the quantum confinement effect in the Ge/Si0.13Ge0.87 quantum wells are directly demonstrated by room temperature photoluminescence.

STRUCTURAL DEFECTS AND THEIR ELECTRICAL-ACTIVITY IN GERMANIUM IMPLANTED SILICON

The electrical and structural characteristics of secondary defects in regrown amorphous layers formed in n-type Si(100) with a resistivity of 2 OMEGA cm and 6 OMEGA cm using Ge+ ions, has been studied. The amorphous layers with a thickness of 460 nm are formed by implantation of 1 x 10(15) Ge+ cm-2 at an energy of 400 keV. Both conventional furnace and rapid thermal annealing were used to regrow the amorphous layer and the residual defects have been characterised in terms of their concentration depth distribution and activation energies using C-V and DLTS. Structural information has been obtained from RBS and XTEM. By choosing suitable anneal conditions it is possible to eliminate extended defects, apart from a low concentration of end of range dislocation loops. However, a substantial population of electrically active point defects remain after simple low thermal budget anneals. In a sample implanted with 1 x 10(15) Ge+ cm-2 at 400 keV a region of deep donors approximately 460 nm from the surface is always present When the samples are annealed at higher temperatures (> 850-degrees the total deep donor concentration is reduced by one order of magnitude. Other electrically active defects not observable in the low (750-degrees-C) temperature annealed layers become apparent during anneals at intermediate temperatures.