GERMANIUM EPITAXY ON SILICON BY IONIZED-CLUSTER BEAM

Autoria(s): QIN FG; WANG XM; YANG GR; LIN LY
Data(s)

1984
Identificador

http://ir.semi.ac.cn/handle/172111/14821

http://www.irgrid.ac.cn/handle/1471x/101445
Idioma(s)

英语
Fonte

QIN FG; WANG XM; YANG GR; LIN LY.GERMANIUM EPITAXY ON SILICON BY IONIZED-CLUSTER BEAM,CHINESE PHYSICS,1984,4(4):976-980
Palavras-Chave #半导体材料
Tipo

期刊论文
Acesso ao item digital