Thermal Strain Analysis of a Flip-Chip Package by a Modified Hybrid Method

介绍一种可用于微电子封装局部应变场分析的实验/计算混合方法,该方法结合了有限元的整体/局部模型和实时的激光云纹干涉技术,利用激光云纹干涉技术所测得的应变场来校核有限元整体模型的计算结果,并用整体模型的结果作为局部模型的边界条件,对实验难以确定的封装结构局部位置的应力、应变场进行分析.用这种方法对可控坍塌倒装封装结构在热载荷作用下焊球内的应变场分布进行了分析,结果表明该方法能够提供封装结构内应力-应变场分布的准确和可靠的结果,为微电子封装的可靠性分析提供重要的依据. For the reliability analysis of electronic packages, strains in very localized areas, such as an interconnection or a corner, need to be determined. In this paper, a modified hybrid method of global/local modeling and real time moire interferometry is presented. In this method, a simplified, coarsely meshed global model is developed to get rough information about the deformation of the microelectronic package. In order to make sure the global model has been reasonably simplified and the material properties ...

Flip-chip bonded hybrid CMOS/SEED optoelectronic smart pixels

Hybrid integration of GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays are demonstrated flip-chip bonded directly onto 1 mu m silicon CMOS circuits. The GaAs/AlGaAs MQW devices are designed for 850 nm operation. Some devices are used as input light detectors and others serve as output light modulators. The measurement results under applied biases show good optoelectronic characteristics of elements in SEED arrays. Nearly the same reflection spectrum is obtained for the different devices at an array and the contrast ratio is more than 1.2:1 after flip-chip bonding and packaging. The transimpedance receiver-transmitter circuit can be operated at a frequency of 300 MHz.

Multiple Quantum Well SEED Arrays for Flip-Chip Bonding Optoelectronic Smart Pixels

于2010-11-23批量导入

Optoelectronic Smart Pixels Comprising Flip-Chip-Bonded GaAs/AlGaAs MQW Detectors and Modulators on Silicon CMOS Circuit

于2010-11-23批量导入

Flip-chip bonded hybrid CMOS/SEED optoelectronic smart pixels

Hybrid integration of GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays are demonstrated flip-chip bonded directly onto 1 mu m silicon CMOS circuits. The GaAs/AlGaAs MQW devices are designed for 850 nm operation. Some devices are used as input light detectors and others serve as output light modulators. The measurement results under applied biases show good optoelectronic characteristics of elements in SEED arrays. Nearly the same reflection spectrum is obtained for the different devices at an array and the contrast ratio is more than 1.2:1 after flip-chip bonding and packaging. The transimpedance receiver-transmitter circuit can be operated at a frequency of 300 MHz.

用改进的混合方法分析微电子封装热应变场

介绍一种可用于微电子封装局部应变场分析的实验/计算混合方法，该方法结合了有限元的整体/局部模型和实时的激光云纹干涉技术，利用激光云纹干涉技术所测得的应变场来校核有限元整体模型的计算结果，并用整体模型的结果作为局部模型的边界条件，对实验难以确定的封装结构局部位置的应力、应变场进行分析。用这种方法对可控坍塌倒装封装结构在热载荷作用下焊球内的应变场分布进行了分析，结果表明该方法能够提供封装结构内应力-应变场分布的准确和可靠的结果，为微电子封装的可靠性分析提供重要的依据。

Optimized design on high-power GaN-based Micro-LEDs - art. no. 684108

The structure of micro-LEDs was optimized designed. Optical, electrical and thermal characteristics of micro-LEDs were improved. The optimized design make micro-LEDs suitable for high-power device. The light extraction efficiency of micro-LEDs was analyzed by the means of ray tracing. The results shows that increasing the inclination angle of sidewall and height of mesa, and reducing the absorption of p and n electrode can enhance the light extraction efficiency of micro-LEDs. Furthermore, the total light output power can be boosted by increasing the density of micro-structures on the device. The high-power flip-chip micro-LEDs were fabricated, which has higher quantum efficiency than conventional BALED's. When the number of microstructure in micro-LEDs was increased by 57%, the light output power was enhanced 24%. Light output power is 82.88mW at the current of 350mA and saturation current is up to 800mA, all of these are better than BALED which was fabricated in the same epitaxial wafer. The IN characteristics of micro-LEDs are almost identical to BALED.

The effects of sapphire substrates processes to the LED efficiency - art. no. 68410M

We investigate the relation between the thickness of sapphire substrates and the extraction efficiency of LED. The increasing about 5% was observed in the simulations and experiments when the sapphire thickness changed from 100um to 200um. But the output power increasing is inconspicuous when the thickness is more than 200um. The structure on bottom face of sapphire substrates can enhance the extraction efficiency of GaN-based LED, too. The difference of output power between the flip-chip LED with smooth bottom surface and the LED with roughness bottom surface is about 50%, where only a common sapphire grinding process is used. But for those LEDs grown on patterned sapphire substrate the difference is only about 10%. Another kind of periodic pattern on the bottom of sapphire is fabricated by the dry etch method, and the output of the back-etched LEDs is improved about 50% than a common. case.

Design and Fabrication of Low-microwave loss Coplannar Waveguide and precise V groove on Silicon Substrate for Optoelectronic Packaging - art. no. 601938

Optoelectronic packaging has become a most important factor that influences the final performance and cost of the module. In this paper, low microwave loss coplanar waveguide(CPW) on high resistivity silicon(HRS) and precise V groove in silicon substrate were successfully fabricated. The microwave attenuation of the CPW made on HRS with the simple process is lower than 2 dB/cm in the frequency range of 0 similar to 26GHz, and V groove has the accuracy in micro level and smooth surface. These two techniques built a good foundation for high frequency packaging and passive coupling of the optoelectronic devices. Based on these two techniques, a simple high resistivity silicon substrate that integrated V groove and CPW for flip-chip packaging of lasers was completed. It set a good example for more complicate optoelectronic packaging.

Multiple quantum well self electro-optic effect devices for optoelectronic smart pixels

The investigations on GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays for optoelectronic smart pixels are reported. The hybrid integration of GaAs/AlGaAs multiple quantum well devices flip-chip bonding directly over 1 mu m silicon CMOS circuits are demonstrated. The GaAs/AlGaAs multiple quantum well devices are designed for 850nm operation. The measurement results under applied biases show the good optoelectronic characteristics of elements in SEED arrays. The 4x4 optoelectronic crossbar structure consisting of hybrid CMOS-SEED smart pixels have been designed, which could be potentially used in optical interconnects for multiple processors.

Application of Optical Protein-chip in Detecting Phage M13KO7

Abstract: Avidin layer was bound on the substrate surface of Silicon wafer modified with aldehyde. The interaction between avidin and biotin was adopted for the immobilization of mouse monoclonal biotin-anti-M13 (antibody GP3)-labeled biotin. The surface was incubated in a solution containing phage M13KO7, which was trapped by the antibody GP3 with the interaction between phage M13KO7 and antibody GP3, resulting in a variation of layer thickness that was detected by imaging ellipsometry. The results showed a saturated layer of antibody GP3 with a thickness about 6.9 nm on the surface of the silicon wafer. The specific interaction between phage M13KO7 and antibody GP3 resulted in a variation of layer thickness. The layer of phage M13KO7 bound with antibody GP3 was 17.5 nm in the concentration of 1.1×1010 pfu/mL. Each variation of the layer thickness corresponded to a concentration of phage M13KO7 in the range of 0.1×1010–2.5×1010 pfu/mL, with the sensitivity of 109 pfu/mL. Compared with other methods, the optical protein-chip, requiring only short measurement time, label free, is a quantitative test, and can be visualized. This study could be significant on the interactions between the antibody and the virus, showing potential in the early diagnosis of virosis.

Micro-systems for Optical Protein-Chip

Protein-Chip as micro-assays for the determination of protein interaction, the analysis, the identification and the purification of proteins has large potential applications. The Optical Protein-Chip is able to detect the multi-interaction of proteins and multi-bio-activities of molecules directly and simultaneously with no labeling. The chip is a small matrix on solid substrate containing multi-micro-area prepared by microfabrication with photolithography or soft lithography for surface patterning, and processed with surface modification which includes the physical, chemical, and bio-chemical modifications, etc. The ligand immobilization, such as protein immobilization, especially the oriented immobilization with low steric hindrance and high bio-specific binding activity between ligand and receptor is used to form a sensing surface. Each area of the pattern is corresponding to only one bioactivity. The interval between the areas is non-bioactive and optically extinctive. The affinity between proteins is used to realize non-labeling microassays for the determination of protein identification and protein interaction. The sampling of the chip is non-disturbing, performed with imaging ellipsometry and image processing on a database of proteins.

Simultaneous Laser-Induced Fluorescence And Contactless-Conductivity Detection For Microfluidic Chip

A combined detection system involving simultaneous LIF and contactless-conductometric measurements at the same place of the microfluidic chip was described. The LIF measurement was designed according to the confocal principle and a moveable contactless-conductivity detector was used in (CD)-D-4. Both measurements were mutually independent and advantageous in analyses of mixtures. Various experimental parameters affecting the response were examined and optimized. The performances were demonstrated by simultaneous detection of Rhodamine B. And the results showed that the combined detection system could be used sensitively and reliably. (C) 2008 Yong Yu. Published by Elsevier B.V. on behalf of Chinese Chemical Society. All rights reserved.