Validity ranges of interfacial wave theories in a two-layer fluid system

In the present paper, we endeavor to accomplish a diagram, which demarcates the validity ranges for interfacial wave theories in a two-layer system, to meet the needs of design in ocean engineering. On the basis of the available solutions of periodic and solitary waves, we propose a guideline as principle to identify the validity regions of the interfacial wave theories in terms of wave period T, wave height H, upper layer thickness d(1), and lower layer thickness d(2), instead of only one parameter-water depth d as in the water surface wave circumstance. The diagram proposed here happens to be Le Mehautes plot for free surface waves if water depth ratio r = d(1)/d(2) approaches to infinity and the upper layer water density rho(1) to zero. On the contrary, the diagram for water surface waves can be used for two-layer interfacial waves if gravity acceleration g in it is replaced by the reduced gravity defined in this study under the condition of sigma = (rho(2) - rho(1))/rho(2) -> 1.0 and r > 1.0. In the end, several figures of the validity ranges for various interfacial wave theories in the two-layer fluid are given and compared with the results for surface waves.

Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD

The structural characteristic of cubic GaN (C-GaN) nucleation layers on GaAs(0 0 1) substrates by metalorganic chemical vapor deposition was in detail investigated first by X-ray diffraction (XRD) measurements, using a Huber five-circle diffractometer and an intense synchrotron X-ray source. The XRD results indicate that the C-GaN nucleation layers are highly crystallized. Phi scans and pole figures of the (1 1 1) reflections give a convincing proof that the GaN nucleation layers show exactly cubic symmetrical structure. The GaN(1 1 1) reflections at 54.74degrees in chi are a measurable component, however (002) components parallel to the substrate surface are not detected. Possible explanations are suggested. The pole figures of {1 0 (1) over bar 0} reflections from H-GaN inclusions show that the parasitic H-GaN originates from the C-GaN nucleation layers. The coherence lengths along the close-packed [1 1 1] directions estimated from the (1 1 1) peaks are nanometer order of magnitude. (C) 2002 Elsevier Science B.V. All rights reserved.

Comprehensive analysis of microtwins in the 3C-SiC films on Si(001) substrates

Microtwins in the 3C-SiC films grown on Si(0 0 1) by atmosphere pressure chemical vapor deposition (APCVD) were investigated in detail using X-ray four-circle diffractometry. The Phi scan shows that 3C-SiC films can grow on Si substrates epitaxially and epitaxial relationship is revealed as (0 0 1)(3C) (SiC)parallel to (0 0 1)(Si),[1 1 1](3C-SiC)parallel to [1 1 1](Si). Other diffraction peaks at about 15.8 degrees in x emerged in the pole figures of the (I 1 1) 3C-SiC. We performed the pole figure of (1 0 (1) over bar 0)h-SiC and the reciprocal space mapping from the (1 1 1) reciprocal lattice point of base SiC to the (0 0 2) point of microtwin for the first time, indicating that the diffraction peaks at 15.8 degrees in x result from not hexagonal SiC but microtwins of 3C-SiC, and twin inclusions are estimated to be around 1%. (C) 2001 Published by Elsevier Science B.V.

X-Ray diffraction determination of the fractions of hexagonal and twinned phases in cubic GaN layers grown on (001)GaAs substrate

Being an established qualitative method for investigating presence of additional phases in single crystal materials, X-ray diffraction has been used widely to characterize their structural qualities and to improve the preparation techniques. Here quantitative X-ray diffraction analysis is described which takes into account diffraction geometry and multiplicity factors. Using double-crystal X-ray four-circle diffractometer, pole figures of cubic (002), {111} and hexagonal {10 (1) over bar0} and reciprocal space mapping were measured to investigate the structural characters of mixed phases and to obtain their diffraction geometry and multiplicity factors. The fractions of cubic twins and hexagonal inclusions were calculated by the integrated intensities of rocking curves of cubic (002), cubic twin {111}, hexagonal {10 (1) over bar0} and hexagonal {10 (1) over bar1}. Without multiplicity factors, the calculated results are portions of mixed phases in only one {111} plane of cubic GaN. Diffraction geometry factor can eliminate the effects of omega and X angles on the irradiated surface areas for different scattered planes. (C) 2001 Elsevier Science B.V. All rights reserved.

Multiplicity factor and diffraction geometry factor for single crystal X-ray diffraction analysis and measurement of phase content in cubic GaN/GaAs(001) epilayers

On the basis of integrated intensity of rocking curves, the multiplicity factor and the diffraction geometry factor for single crystal X-ray diffraction (XRD) analysis were proposed and a general formula for calculating the content of mixed phases was obtained. With a multifunction four-circle X-ray double-crystal diffractometer, pole figures of cubic (002), {111} and hexagonal {1010} and reciprocal space mapping were measured to investigate the distributive character of mixed phases and to obtain their multiplicity factors and diffraction geometry factors. The contents of cubic twins and hexagonal inclusions were calculated by the integrated intensities of rocking curves of cubic (002), cubic twin {111}, hexagonal {1010} and {1011}.

Three-Dimensional Linear Instability Analysis of Thermocapillary Return Flow on a Porous Plane

A three-dimensional linear instability analysis of thermocapillary convection in a fluid-porous double layer system, imposed by a horizontal temperature gradient, is performed. The basic motion of fluid is the surface-tension-driven return flow, and the movement of fluid in the porous layer is governed by Darcy's law. The slippery effect of velocity at the fluid-porous interface has been taken into account, and the influence of this velocity slippage on the instability characteristic of the system is emphasized. The new behavior of the thermocapillary convection instability has been found and discussed through the figures of the spectrum.

椭圆芯双模光纤干涉模斑中心间距的研究

通过弱波导近似的方法，讨论了椭圆芯双模光纤中沿光纤长轴的基模模斑半径Wx和短轴的基模模斑半径Wy尺寸，分析了它们的比值随入射光波长λ及纤芯半长轴与半短轴的比值a/b的变化规律。 针对基模LP01和第一高阶模LP11间的相位差变化，计算了双模干涉模斑的分布结构。计算结果表明，当基模LP01和第一高阶模LP11间的相位差为π/2时，两瓣干涉模斑有相同的结构特征。同时，两瓣模斑的中心间距S随Wx/Wy的的增加而变大。而且，当入射波长在0.65 μm和 1.31 μm之间变化时，结合两瓣模斑的中心间距S随Wx/Wy的变化规律，首次给出了S的计算公式。这对于实际应用如传感器和光纤耦合器件设计是很重要的。

Microtwins and twin inclusions in the 3C-SiC epilayers grown on Si(001) by APCVD

Microtwins in the 3C-SiC films grown on Si(001) by APCVD were analyzed in detail using an X-ray four-circle diffractometer. The empty set scan shows that 3C-SiC films can grow on Si substrates epitaxially and the epitaxial relationship is revealed as (001)(3C-SiC)//(001)(Si), [111](3C-SiC)//[111](Si). Other diffractions emerged in the pole figures of the (111) 3C-SiC. We performed the (10 (1) over bar0) h-SiC and the reciprocal space mapping of the (002) plane of twins for the first time, finding that the diffractions at chi = 15.8 degrees result from not hexagonal SiC but microtwins of 3C-SiC, and twin inclusions are estimated to be 1%.

基于约束的4自由度并联机床的可达工作空间分析

针对一种新型的4-DOF并联机构的结构特点,采用基于逆解计算的网格法对其工作空间求解的算法进行了详细的分析,并利用Matlab编制了相应的程序,以Matlab图的形式描绘了几种情况下的工作空间区域,并对此进行了分析。

Configural processing of different topologically structured figures: an ERP Study

According to Chen's theory, topological differences are perceived faster than feature differences in early visual perception. We hypothesized that topological perception is caused by the sensitivity in discriminating figures with and without "holes". An E