X-Ray diffraction determination of the fractions of hexagonal and twinned phases in cubic GaN layers grown on (001)GaAs substrate


Autoria(s): Qu B; Zheng XH; Wang YT; Feng ZH; Liu SA; Lin SM; Yang H; Liang JW
Data(s)

2001

Resumo

Being an established qualitative method for investigating presence of additional phases in single crystal materials, X-ray diffraction has been used widely to characterize their structural qualities and to improve the preparation techniques. Here quantitative X-ray diffraction analysis is described which takes into account diffraction geometry and multiplicity factors. Using double-crystal X-ray four-circle diffractometer, pole figures of cubic (002), {111} and hexagonal {10 (1) over bar0} and reciprocal space mapping were measured to investigate the structural characters of mixed phases and to obtain their diffraction geometry and multiplicity factors. The fractions of cubic twins and hexagonal inclusions were calculated by the integrated intensities of rocking curves of cubic (002), cubic twin {111}, hexagonal {10 (1) over bar0} and hexagonal {10 (1) over bar1}. Without multiplicity factors, the calculated results are portions of mixed phases in only one {111} plane of cubic GaN. Diffraction geometry factor can eliminate the effects of omega and X angles on the irradiated surface areas for different scattered planes. (C) 2001 Elsevier Science B.V. All rights reserved.

Identificador

http://ir.semi.ac.cn/handle/172111/12152

http://www.irgrid.ac.cn/handle/1471x/65046

Idioma(s)

英语

Fonte

Qu B; Zheng XH; Wang YT; Feng ZH; Liu SA; Lin SM; Yang H; Liang JW .X-Ray diffraction determination of the fractions of hexagonal and twinned phases in cubic GaN layers grown on (001)GaAs substrate ,THIN SOLID FILMS,2001 ,392(1):29-33

Palavras-Chave #半导体材料 #gallium nitride #X-ray diffraction #EPITAXY #RATIO
Tipo

期刊论文