Multiple quantum well self electro-optic effect devices for optoelectronic smart pixels

The investigations on GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays for optoelectronic smart pixels are reported. The hybrid integration of GaAs/AlGaAs multiple quantum well devices flip-chip bonding directly over 1 mu m silicon CMOS circuits are demonstrated. The GaAs/AlGaAs multiple quantum well devices are designed for 850nm operation. The measurement results under applied biases show the good optoelectronic characteristics of elements in SEED arrays. The 4x4 optoelectronic crossbar structure consisting of hybrid CMOS-SEED smart pixels have been designed, which could be potentially used in optical interconnects for multiple processors.

Laser ranging based on electro-optic switch

Based on electro-optic switch effect in crystal, a novel laser ranging method is proposed. CW-laser emitted by laser transmitter propagates forward to the measured target, after being reflected by the target, and then goes back to the transmitter. Close to the transmitter, a special mono-block LiNbO3 crystal is added into the round-trip light beams. High-voltage pulses with the sharp enough changes in rising edges are loaded on the crystal. Based on electro-optic effect, double refraction and internal double reflection effect in crystal, the crystal cuts off the round-trip light beams, and reflects a light pulse cut out by the crystal to a detector aside from the original beam path. The pulse width T is the period that laser propagates forward and back between the crystal and the target. The feasibility of the new idea is proved by our experiments and a brand-new way for the laser ranging is provided. (c) 2005 Elsevier GmbH. All rights reserved.

Electro-optic modulation of light propagating near the optic axis with any polarization in uniaxial crystals

The electro-optic effect in uniaxial crystals for light propagating near the optic axis with any polarization has been analyzed. The passive and the electrically induced birefringences and the rotation of polarization direction in crystals have been calculated, and the conoscopic interference figures under orthogonal polariscopes for different polarizer directions have been plotted. The extinction areas caused by the rotation of polarization direction in crystals change with the polarizer direction, but the two heads of the induced optical axes do not vary, which are always on the induced principal axis with bigger refractive index. The directions of polariscopes are always extinction, and the +/- 45 degrees directions with polarizer are always complete transmission. The conoscopic interference figures for LiNbO3 crystals have been demonstrated experimentally by rotating polariscopes directions, which accord with the theoretically calculating plots. (c) 2006 Elsevier GmbH. All rights reserved.

Experimental investigation of optical beam deflection based on PLZT electro-optic ceramic

Based on the optical characteristics of PLZT electro-optic ceramic, two kinds of electro-optic deflectors, triangular electrode structure and optical phased array technology, are studied in detail by using transverse electro-optic effect. Theoretically, the electro-optic deflection characteristics and mechanisms of the deflectors are analyzed. Experimentally, the optical characteristics of ceramic wafer, such as the phase modulation, the hysteresis and the electro-induced loss characteristics, are measured firstly, and then the beam deflection experiments are designed to verify the theoretical results. Moreover, the effect of temperature on the performance of triangular electrode deflector is investigated. The characteristics of both deflectors are also compared and illuminated. (c) 2007 Optical Society of America.

Analysis of interdigital electro-optic Bragg diffraction grating

Some integrated optics devices can be made based on the interdigital electro-optic Bragg diffraction grating. The point-matching method is extended to the analysis of interdigital electro-optic Bragg diffraction gratings. This method provides a simple and fast analytic expression of the electric field in the structure. The field distributions are used to calculate the optical and electrical characteristic parameters of the gratings. The effects of finite conductor thickness have been taken into account in the analysis. It is shown that the simulation results agree well with the measured data.

High-speed 2 x 2 silicon-based electro-optic switch with nanosecond switch time

A 2 x 2 electro-optic switch is experimentally demonstrated using the optical structure of a Mach-Zehnder interferometer (MZI) based on a submicron rib waveguide and the electrical structure of a PIN diode on silicon-on-insulator (SOI). The switch behaviour is achieved through the plasma dispersion effect of silicon. The device has a modulation arm of I mm in length and cross-section of 400 nmx340 nm. The measurement results show that the switch has a V pi L pi figure of merit of 0.145 V-cm and the extinction ratios of two output ports and cross talk are 40 dB, 28 dB and -28 dB, respectively. A 3 dB modulation bandwidth of 90 MHz and a switch time of 6.8 ns for the rise edge and 2.7 ns for the fall edge are also demonstrated.

Electro-optic integration of embedded electrodes and waveguides in LiNbO3 using a femtosecond laser

We describe the fabrication of a Mach-Zehnder optical modulator in LiNbO3 by femtosecond laser micormachining, which is composed of optical waveguides inscripted by a femtosecond laser and embedded microelectrodes subsequently using femtosecond laser ablation and selective electroless plating. A half-wave voltage close to 19 V is achieved at a wavelength of 632.8 nm with an interaction length of 2.6 mm. This simple and cost-effective technique opens up new opportunities for fabricating integrated electro-optic devices. (C) 2008 Optical Society of America

Time domain synthesis of electro-optical birefringent system for optical waveform generation

In this paper is described a novel technique for producing an electro-optical intensity synthesizer which can generate different periodic time domain waveforms through only sine or cosine wave applied-voltages. The synthesizer presented here consists of a series of stages between two polarizers, with each stage consisting of an electro-optic element and a compensator. Every electro-optical element has the same applied-voltage function but different azimuth angles and ratios between the longitudinal and transverse lengths. The main principle is the synthesis of an electro-optic effect and a polarization interference effect in the time domain. This technique is based on an expanded Fourier positive-direction searching algorithm, which can not only simplify the calculation process but also produces many choices of structural parameters for different waveforms generation. A three-stage synthesis of an electro-optical birefringent system for continuous square waveform is undertaken to prove the principle.

Kilohertz electro-optic Q-switched Nd : YAG ceramic laser

We investigate the lasing characteristics of a laser-diode-array side-pumped electro-optic Q-switched Nd:Y3Al5O12 ceramic laser operating at 1000 Hz pulse repetition rate. Using a YAG poltcrystalline rod with Nd3+ concentration at 1 at.% as the gain medium, pumping with 808 nm laser-diode-arrays, the Q-switched laser output at 1064 nm wavelength with 23 mJ pulse energy and less than 12 ns FWHM pulse width are obtained at a pumping power of about 400 W, the slope efficiency is around 15%, the output beam divergence angle is about 1.2 mrad.

Depolarization loss compensated resonator for electro-optic Q-switched solid-state laser

A novel laser resonator for compensating depolarization loss that is due to thermally induced birefringence in active rod is reported. As this new structure being applied to an electro-optic Q-switched LIDA side-pumped Nd:YAG laser operating at a repetition rate of 1000 Hz, substantial reduction in depolarization loss has been observed, the output pulse energy is improved about 56% from that of a traditional resonator without compensation structure. With incident pump energy of 450 mJ per pulse, linearly polarized output energy of 30 mJ per pulse is achieved, the pulse duration is less than 15 ns, and the peak power of pulse is about 2 MW. The extinction ratio of laser beam is better than 10:1, and the beam divergence is 1.3 mrad with beam diameter of around 2.5 mm. (c) 2006 Published by Elsevier B.V.

The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots

The refractive nonlinearities of InAs/GaAs quantum dots under a dc electric field at photon energies above its band gap energy have been studied using the reflection Z-scan technique. The effect of the dc electric field on the nonlinear response of InAs/GaAs quantum dots showed similar linear and quadratic electro-optic effects as in the linear response regime at low fields. This implies that the electro-optic effect in the nonlinear regime is analogous to the response in the linear regime for semiconductor quantum dots. Our experimental results show the potential for voltage tunability in InAs quantum dot-based nonlinear electro-optic devices.

Silicon-on-insulator based electro-optic variable optical attenuator with a series structure

An electro-optic variable optical attenuator in silicon-on-insulator is designed and fabricated. A series Structure is used to improve the device efficiency Compared to the attenuator in the single p-i-n diode Structure in the same modulating length, the attenuation range of the device in the series structure improves 2-3 times in the same injecting current density, while the insertion loss is not affected. The maximum dynamic attenuation of the device is greater than 30 dB. The response frequency is obtained to be about 2 MHz.