水稻OsMYB3R-2 基因对逆境响应的功能研究

低温威胁水稻的生产，其中苗期和生殖阶段对寒害是最敏感的时期。在苗期，阶段性冷害使水稻幼苗生长延迟，甚至造成烂秧现象；在生殖阶段，无法预测的突然降温会导致水稻花粉不育，并致使水稻大幅减产。因此，对水稻逆境胁迫调控的分子机制的深入研究在理论和实践上具有重要的意义。本研究从东乡野生稻、栽培稻及其杂交后代的低温芯片中筛选对低温响应基因的分析着手，对其中一个受低温诱导上调的基因OsMYB3R-2 作进一步研究。生物信息学的分析表明OsMYB3R-2 编码一个R1R2R3 MYB 蛋白，利用基因枪瞬时转化法、酵母GAL4 系统和电泳迁移率变动分析发现OsMYB3R-2 蛋白能够定位在细胞核中、具有转录激活和DNA 结合特性，表现为MYB 转录因子的典型特征。 超表达OsMYB3R-2 的转基因水稻呈现幼苗的矮化和生长相对滞后的表型，对低温胁迫具有耐受性。盐抑制水稻种子的萌发，与野生型和反义的株系相比，OsMYB3R-2 超表达株系的萌发对盐敏感，表现为萌发过程及萌发之后幼苗的生长更加滞后。而OsMYB3R-2 转基因株系对干旱处理敏感。为了进一步寻找OsMYB3R-2 蛋白的靶序列及其调控的靶基因，我们利用电泳迁移率变动分析发现OsMYB3R-2 能够与有丝分裂特异的激活子（mitosis-specific activator）元件特异结合。在低温条件下，OsMYB3R-2 超表达能够激活水稻G2/M 期特异基因的表达，主要包括OsCycB1;1、OsCycB2;1、OsCycB2;2 和OsCDC20.1 等。另一方面，OsMYB3R-2 超表达能够增加根尖细胞的有丝分裂指数，这进一步说明OsMYB3R-2 参与了水稻细胞周期调控。EMSA、RT-PCR 和流式细胞仪分析的结果表明OsMYB3R-2 通过激活其靶基因OsCycB1;1 的表达参与水稻对低温胁迫的调控，该过程由细胞周期介导。 为了研究OsMYB3R-2 与水稻DREB/CBF 途径的关系，我们分析了转基因水稻中DREB/CBF 类基因及其可能调控的下游基因与OsMYB3R-2 的关系，RT-PCR 的结果表明超表达转基因植物中DREB 表达未见明显变化，而其下游基因OsCPT1 在低温条件下被激活表达。同时，转基因植物在低温条件下脯氨酸水平显著提高。这说明OsMYB3R-2 可能在水稻DREB/CBF 途径的下游参与调控。 总之，OsMYB3R-2 基因的超表达赋予转基因水稻在苗期对低温胁迫具有耐受性，并呈现矮化和生长滞后的表型。OsMYB3R-2 蛋白行使R1R2R3 MYB 转录因子的功能，在体外能够结合OsCycB1;1 和OsKNOLLE2 基因启动子中有丝分裂特异的激活子元件，在低温条件下激活了G2/M 期特异基因的表达，这些基因包括OsCycB1;1、OsCycB2;1、OsCycB2;2 和OsCDC20.1。低温条件下，在OsMYB3R-2 转基因超表达株系中OsCPT1 基因的转录被激活，细胞的游离脯氨酸的含量也显著增高。这些结果都表明OsMYB3R-2 基因在水稻的冷胁迫信号途径中起重要的作用，该过程受细胞周期及DREB/CBF 途径介导。 我们的实验结果暗示水稻对低温的耐受是通过分生组织细胞周期调控完成的，这个过程由OsMYB3R-2 等关键基因控制。

EFFECTS OF LOW-TEMPERATURE AND PHYSIOLOGICAL AGE ON SUPEROXIDE-DISMUTASE IN WATER HYACINTH (EICHHORNIA-CRASSIPES SOLMS)

Superoxide dismutase activity in water hyacinth leaves was not sensitive to small changes in environmental pH, but declined markedly with greater pH changes. KCN inhibited superoxide dismutase activity, suggesting that the enzyme was mainly composed of the Cu-Zn form. Low temperature (2-degrees-C) treatment caused a decline in superoxide dismutase activity. This effect became more pronounced as the treatment time was prolonged. Furthermore, the decline was much more significant than reductions of glucose-6-phosphate dehydrogenase activity or respiration under comparable conditions. With increasing physiological age, superoxide dismutase activity declined and was significantly lower in old than in young leaves. Therefore, superoxide dismutase activity might be employed as one of physiological parameters in studying leaf senescence.

A bidirectionall diode-pumped, passively mode-locked Nd : YVO4 ring laser with a low-temperature-grown semiconductor saturable absorber mirror

We report the operation of a bidirectional picosecond pulsed ring Nd:YVO4 laser based on a low-temperature-grown semiconductor saturable absorber mirror. Except for the laser crystal, the six-mirror ring laser cavity has no intra-cavity elements such as focusing lens or mirror. The bidirectional mode locked pluses are obtained at the repetition rate of 117.5 MHz, pulse duration of 81 ps, power of 2 x 200 mW.

Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate

Quaternary InAlGaN film has been grown directly on top of low-temperature-deposited GaN buffer layer by low-pressure metalorganic vapor phase epitaxy. High-resolution X-ray diffraction and photoluminescence (PL) results show that the film has good crystal quality and optical property. Temperature-dependent PL and time-resolved PL (TRPL) have been employed to study the carriers recombination dynamics in the film. The TRPL signals can be well fitted as a stretched exponential function exp[-(t/tau)(beta)] from 14 to 250 K, indicating that the emission is attributed to the radiative recombination of excitons localized in disorder quantum nanostructures such as quantum disks originating from indium (In) clusters or In composition fluctuation. The cross-sectional high-resolution electron microscopy measurement further proves that there exist the disorder quantum nanostructures in the quaternary. By investigating the dependence of the exponential parameter beta on the temperature, it is shown that the multiple trapping-detrapping mechanism dominates the diffusion among the localized states. The localized states are considered to have two-dimensional density of states (DOS) at 250 K, since radiative recombination lifetime tau(r) increases linearly with increasing temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

Raman study of low-temperature-grown Al0.29Ga0.71As/GaAs photorefractive materials

We report on the observation of resonant Raman scattering in low-temperature-grown AlGaAs/GaAs structure. Two kinds of excitation lights, 632.8 and 488 nm laser lines, were used to detect scattering signal from different regions based on different penetration depths. Under the outgoing resonant condition, up to fourth-order resonant Raman peaks were observed in the low-temperature-grown AlGaAs alloy, owing to a broad exciton luminescence in low-temperature-grown AlGaAs alloy induced by intrinsic defects and As cluster after post-annealing. These resonant peaks were assigned according to their fundamental modes. Among the resonant peaks, besides the overtones of the GaAs- or AlAs-like mode, there exist combination bands of these two kinds of modes. In addition, a weak scattering peak similar to the bulk GaAs longitudinal optical mode was observed in low-temperature Raman experiments. We consider the weak signal correlated with GaAs clusters appearing in AlGaAs alloys. The accumulation of GaAs in AlGaAs alloys was enhanced after annealing at high temperatures. A detailed study of the dependence of vibration modes on measuring temperature and post-annealing conditions is given also. In light of our experiments, it is suggested that a Raman scattering experiment is a sensitive microscopic probe of local disorder and, especially performed at low temperature, is a superior method in detecting and analyzing the weak interaction between phonons and electrons.

Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy

Low temperature (similar to 500 degrees C) growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy have been studied with an emphasis on surface morphology and growth kinetics. It is found that low-temperature growth(<500 degrees C) is in layer-by-layer mode and atomically-smooth surfaces have been obtained in as-grown samples with large Ge composition (>0.5). Ge composition dependence on substrate temperature, Ge cell temperature and disilane flow rate have been investigated. It is found that in low-temperature growth (less than or equal to 500 degrees C) and under large disilane flux, Ge composition increases with the increase of Ge flux and further increase of Ge flux leads to the saturation of Ge composition. Similar compositional dependence has been found at different growth temperatures. The saturated composition increases with the decrease of substrate temperature. The results can be explained if H desorption is assumed to occur from both Si and Ge monohydrides without diffusional exchange and the presence of Ge enhances H desorption on a Si site. (C) 1998 Elsevier Science B.V. All rights reserved.

Low-Temperature Growth of ZnO Films on GaAs by Metal Organic Chemical Vapor Deposition

ZnO thin films were grown on GaAs （001） substrates by metal-organic chemical vapor deposition （MOCVD） at low temperatures ranging from 100 to 400℃. DEZn and 1-12 O were used as the zinc precursor and oxygen precursor, respectively. The effects of the growth temperatures on the growth characteristics and optical properties of ZnO films were investigated. The X-ray diffraction measurement （XRD） results indicated that all the thin films were grown with highly c- axis orientation. The surface morphologies and crystal properties of the films were critically dependent on the growth temperatures. Although there was no evidence of epitaxial growth, the scanning electron microscopy （SEM） image of ZnO film grown at 400℃ revealed the presence of ZnO microcrystallines with closed packed hexagon structure. The photoluminescence spectrum at room temperature showed only bright band-edge （3. 33eV） emissions with little or no deep-level e- mission related to defects.

Low -temperature preparation of ZnO films on Si substrates by MOCVD

ZnO films were deposited on Si（100） substrates at 300℃ by metal - organic chemical vapor deposition（MOCVD）. The effect of different ratios of DEZn to N2O on crystal quality was analyzed. It is found that the optimum ratio of DEZn to N2O is 2.1. And in this optimum growth condition, X - ray diffraction （XRD） and scanning probe morphology （SPM） images indicate that the films grow along the c - axis orientation. ZnO film exhibits a strong UV optical absorption near 388 nm. And the optical absorbance is close to zero,that indicates nearly 100% optical transparence. Photoluminescence （PL） spectrum shows only strong near - band - edge emissions with little or no deep - level emission related to defects. The full - width at half - maximum （FWHM） of the ultraviolet emission peak is 80meV. The results indicate that better crystal quality can be obtained.

Single Layer Growth of Strained Epitaxy at Low Temperature

Contacting mode atomic force microscopy (AFM) is used to measure the In0.asGao.65As/GaAs epilayer grown at low temperature (460°C). Unlike the normal layer-by-layer growth (FvdM mode) or self-organized islands growth (SK mode) ,samples grown under 460 C are found to be large islands with atomic thick terraces. AFM measurements reveale near one monolayer high steps. This kind of growth is good between FvdM and SK growth modes and can be used to understand the evolution of strained epitaxy from FvdM to SK mode.

Performance comparison of low-temperature direct alcohol fuel cells with different anode catalysts

Low-temperature polymer electrolyte membrane fuel cells directly fed by methanol and ethanol were investigated employing carbon supported Pt, PtSn and PtRu as anode catalysts, respectively. Employing Pt/C as anode catalyst, both direct methanol fuel cell (DMFC) and direct ethanol fuel cell (DEFC) showed poor performances even in presence of high Pt loading on anode. It was found that the addition of Ru or Sn to the Pt dramatically enhances the electro-oxidation of both methanol and ethanol. It was also found that the single cell adopting PtRu/C as anode shows better DMFC performance, while PtSn/C catalyst shows better DEFC performance. The single fuel cell using PtSn/C as anode catalyst at 90degreesC shows similar power densities whenever fueled by methanol or ethanol. The cyclic voltammetry (CV) and single fuel cell tests indicated that PtRu is more suitable for DMFC while PtSn is more suitable for DEFC. (C) 2003 Elsevier B.V. All rights reserved.

Low-temperature heat capacities and standard molar enthalpy of formation of aspirin

Molar heat capacities (C-p,C-m) of aspirin were precisely measured with a small sample precision automated adiabatic calorimeter over the temperature range from 78 to 383 K. No phase transition was observed in this temperature region. The polynomial function of Cp, vs. T was established in the light of the low-temperature heat capacity measurements and least square fitting method. The corresponding function is as follows: for 78 Kless than or equal toTless than or equal to383 K, C-p,C-m/J mol(-1) K-1=19.086X(4)+15.951X(3)-5.2548X(2)+90.192X+176.65, [X=(T-230.50/152.5)]. The thermodynamic functions on the base of the reference temperature of 298.15 K, {DeltaH(T)-DeltaH(298.15)} and {S-T-S-298.15}, were derived.

Atomic force microscopic study of low temperature induced disassembly of RecA-dsDNA filaments

The assembly and disassembly of RecA-DNA nucleoprotein filaments on double-stranded DNA (dsDNA) or single-stranded DNA (ssDNA) are important steps for homologous recombination and DNA repair. The assembly and disassembly of the nucleoprotein filaments are sensitive to the reaction conditions. In this work, we investigated different morphologies of the formed nucleoprotein filaments at low temperature under different solution conditions by atomic force microscopy (AFM). We found that low temperature and long keeping time could induce the incomplete disassembly of the formed nucleoprotein filaments.

Low-temperature synthesis of oil-soluble CdSe, CdS, and CdSe/CdS core - Shell nanocrystals by using various water-soluble anion precursors

Colloidal CdSe and CdS quantum dots were synthesized at low temperatures (60-90 degrees C) by a two-phase approach at a toluene-water interface. Oil-soluble cadmium myristate (Cd-MA) was used as cadmium source, and water-soluble Na2S, thiourea, NaHSe, Na2SeSO3, and selenourea were used as sulfur and selenium sources, respectively. When a cadmium precursor in toluene and a selenium precursor in water were mixed, CdSe nanocrystals were achieved at a toluene-water interface in the range of 1.2-3.2 nm in diameter. Moreover, we also synthesized highly luminescent CdSe/CdS core-shell quantum dots by a two-phase approach using poorly reactive thiourea as sulfur source in an autoclave at 140 degrees C or under normal pressure at 90 degrees C. Colloidal solutions of CdSe/CdS core-shell nanocrystals exhibit a photoluminescence quantum yield (PL QY) up to 42% relative to coumarin 6 at room temperature.

Low temperature preparation and fuel cell properties of rare earth doped barium cerate solid electrolytes

The solid electrolytes, BaCe(0.8)Ln(0.2)O(2.9) (Ln: Gd, Sm, Eu), were prepared by the sol-gel method. XRD indicated that a pure orthorhombic phase was formed at 900 degrees C. The synthesis temperature by the sol-gel method was about 600 degrees C: lower than the high temperature solid phase reaction method. The electrical conductivity and impedance spectra were measured and the conduction mechanism was studied. The grain-boundary resistance of the solid electrolyte could be reduced or eliminated by the sol-gel method. The conductivity of BaCe0.8Gd0.2O2.9 is 7.87 x 10(-2) S.cm(-1) at 800 degrees C. The open-circuit voltage of hydrogen-oxygen fuel cell using BaCe0.8Gd0.2O2.9 as electrolyte was near to 1 V and its maximum power density was 30 mW.cm(-2).