Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (100) substrates

The formation process of InAs quantum dots (QDs) on vicinal GaAs (1 0 0) substrates is studied by atomic force microscopy (AFM). It is found that after 1.2 MLs of InAs deposition, while the QDs with diameters less than the width of the multi-atomic steps are shrinking, the larger QDs are growing. Photoluminescence measurements of the uncapped QDs correspond well to the AFM structure observations of the QDs. We propose that the QDs undergo an anomalous coarsening process with modified growth kinetics resulting from the restrictions of the finite terrace sizes. A comparison between the QDs on the vicinal GaAs (1 0 0) substrates and the QDs on the exact GaAs (1 0 0) further verifies the effect of the multi-atomic steps on the formation of QDs.

Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001)

Red-emission at similar to 640 nm from self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on GaAs substrate by molecular beam epitaxy (MBE) has been demonstrated. We obtained a double-peak structure of photoluminescence (PL) spectra from quantum dots. An atomic force micrograph (AFM) image for uncapped sample also shows a bimodal distribution of dot sizes. From the temperature and excitation intensity dependence of PL spectra, we found that the double-peak structure of PL spectra from quantum dots was strongly correlated to the two predominant quantum dot families. Taking into account quantum-size effect on the peak energy, we propose that the high (low) energy peak results from a smaller (larger) dot family, and this result is identical with the statistical distribution of dot lateral size from the AFM image.

Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001)

Red-emission at similar to 640 nm from self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on GaAs substrate by molecular beam epitaxy (MBE) has been demonstrated. We obtained a double-peak structure of photoluminescence (PL) spectra from quantum dots. An atomic force micrograph (AFM) image for uncapped sample also shows a bimodal distribution of dot sizes. From the temperature and excitation intensity dependence of PL spectra, we found that the double-peak structure of PL spectra from quantum dots was strongly correlated to the two predominant quantum dot families. Taking into account quantum-size effect on the peak energy, we propose that the high (low) energy peak results from a smaller (larger) dot family, and this result is identical with the statistical distribution of dot lateral size from the AFM image.

Studies on coarsening of microdomains in binary polymer mixtures by Lattice Boltzmann methods

An improved free energy approach Lattice Boltzmann model(LBM) is proposed by introducing a forcing term instead of the pressure tensor. This model can reach the proper thermodynamic equilibrium after enough simulation time. On the basis of this model, the phase separation in binary polymer mixtures is studied by applying a Flory-Huggins-type free energy. The numerical results show good agreement with the analytic coexistence curve. This model can also be used to study the coarsening of microdomains in binary polymer mixtures at the early and intermediate stages.

STUDY OF COARSENING OF MICRODOMAINS IN BLOCK COPOLYMERS BY LATTICE BOLTZMANN METHODS

In order to understand the coarsening of microdomains in symmetric diblock copolymers at the late stage, a model for block copolymers is proposed. By incorporating the self consistent field theory with the free energy approach Lattice Boltzmann model, hydrodynamic interactions can be considered. Compared with models based on Ginzburg-Landau free energy, this model does not employ phenomenological free energies to describe systems. The model is verified by comparing the simulation results obtained using this method with those of a dynamical version of the self consistent mean field theory. After that,the growth exponents of the characteristic domain size for symmetric block copolymers at late stage are studied. It is found that the viscosity of the system affects the growth exponents greatly, although the growth exponents are all less than 1/3 Furthermore, the relations between the growth exponent, the interaction parameter and the chain length are studied.

Evolution of Ge and SiGe quantum dots under excimer laser annealing

We present different relaxation mechanisms of Ge and SiGe quantum dots under excimer laser annealing. Investigation of the coarsening and relaxation of the dots shows that the strain in Ge dots on Ge films is relaxed by dislocation since there is no interface between the Ge dots and the Ge layer, while the SiGe dots on Si0.77Ge0.23 film relax by lattice distortion to coherent clots, which results from the obvious interface between the SiGe clots and the Si0.77Ge0.23 film. The results are suggested and sustained by Vanderbilt and Wickham's theory, and also demonstrate that no bulk diffusion oGeurs during the excimer laser annealing.

碳化硅中氦离子高温注入引入的缺陷及其退火行为的光谱研究

对氦(He)离子高温(600K)注入6H-SiC中的辐照缺陷,在阶梯温度退火后演化行为的拉曼光谱和室温光致发光谱的特征进行了分析.这两种方法的实验结果表明,离子注入所产生晶格损伤的程度与注入剂量有关;高温退火导致损伤的恢复,不同注入剂量造成的晶格损伤需要不同的退火温度才可恢复.在阶梯温度退火下呈现出了点缺陷的复合、氦-空位团的产生、氦泡的形核、长大等特性.研究表明:高温(600K)注入在一定剂量范围内是避免注入层非晶化的一个重要方法,为后续利用氦离子注入空腔掩埋层吸杂或者制备低成本、低缺陷密度的绝缘层上碳化硅(SiCOI)材料提供了可能.

Study of He-induced nano-cavities as sinks of oxygen for forming silicon-on-insulator

In the present work, a Cz-Silicon wafer is implanted with helium ions to produce a buried porous layer, and then thermally annealed in a dry oxygen atmosphere to make oxygen transport into the cavities. The formation of the buried oxide layer in the case of internal oxidation (ITOX) of the buried porous layer of cavities in the silicon sample is studied by positron beam annihilation (PBA). The cavities are formed by 15 keV He implantation at a fluence of 2 x 10(16) cm(-2) and followed by thermal annealing at 673 K for 30 min in vacuum. The internal oxidation is carried out at temperatures ranging from 1073 to 1473 K for 2 h in a dry oxygen atmosphere. The layered structures evolved in the silicon are detected by using the PBA and the thicknesses of their layers and nature are also investigated. It is found that rather high temperatures must be chosen to establish a sufficient flux of oxygen into the cavity layer. On the other hand high temperatures lead to coarsening the cavities and removing the cavity layer finally.

Studies on morphology and crystallization of polypropylene/polyamide 12 blends

Scanning electron microscopy (SEM) and an image analyser are used to study morphologies of the fractured surface, etched by hot phenol, of polypropylene/maleated polypropylene/polyamide 12 PP/PP-MA/PA12) = 65/10/25 blend and PP-MA/PA12 = 75/25 blend. The particle dimension and its distribution of PA12 dispersed phase in these blends are much lower and narrower than that of the PP/PA12. blends. Especially, most of the particles in the PP-MA/PA12 = 75/25 blend are smaller than 0.1 mu m. The effect of the morphology of PP/PA12 blends on their crystallization behaviour is studied using differential scanning calorimetry and SEM. PA12 dispersed phase coarsens during annealing in the PP/PP-MA/PA12 = 65/10/25 blend. The mechanism of coarsening of the PA12 dispersed phase is a coalescence process. The intense mixing between the PP component and the PA12 component through reaction of PP-MA and PA12 leads to a change of dynamic mechanical behaviour of the components. A separation method is used to separate the polyolefin parts (precipitated from hot phenol), from PA12 parts (hot phenol filtrate). Of PP/PP-MA/PA12 = 65/10/25 blend, infra-red measurements and elementary analysis show that the precipitate has a lower PA12 content than the feed, whereas the filtrate has a higher PA12 content. From PP-MA/PA12 = 75/25 blend, PA12 contents in the precipitate and the filtrate are the same as in the feed. This implies that all PA12 has reacted with all PP-MA in the latter case while not in the former case. Using the method of interface exposure, interfacial reaction of PP-MA with PA12 is studied by X-ray photoelectron spectrometry (X.p.s.). Copyright (C) 1996 Elsevier Science Ltd.

Effect of spatial variation on areal evapotranspiration simulation in Haibei, Tibet plateau, China

Quantification of areal evapotranspiration from remote sensing data requires the determination of surface energy balance components with support of field observations. Much attention should be given to spatial resolution sensitivity to the physics of surface heterogeneity. Using the Priestley-Taylor model, we generated evapotranspiration maps at several spatial resolutions for a heterogeneous area at Haibei, and validated the evapotranspiration maps with the flux tower data. The results suggested that the mean values for all evapotranspiration maps were quite similar but their standard deviations decreased with the coarsening of spatial resolution. When the resolution transcended about 480 m, the standard deviations drastically decreased, indicating a loss of spatial structure information of the original resolution evapotranspiration map. The absolute values of relative errors of the points for evapotranspiration maps showed a fluctuant trend as spatial resolution of input parameter data layers coarsening, and the absolute value of relative errors reached minimum when pixel size of map matched up to measuring scale of eddy covariance system. Finally, based on the analyses of the semi-variogram of the original resolution evapotranspiration map and the shapes of spatial autocorrelation indices of Moran and Geary for evapotranspiration maps at different resolutions, an appropriate resolution was suggested for the areal evapotranspiration simulation in this study area.