Acute rejection is associated with antibodies to non-Gal antigens in baboons using Gal-knockout pig kidneys

We transplanted kidneys from alpha 1,3-galactosyltransferase knockout (GalT-KO) pigs into six baboons using two different immunosuppressive regimens, but most of the baboons died from severe acute humoral xenograft rejection. Circulating induced antibodies to non-Gal antigens were markedly elevated at rejection, which mediated strong complement-dependent cytotoxicity against GaIT-KO porcine target cells. These data suggest that antibodies to non-Gal antigens will present an additional barrier to transplantation of organs from GaIT-KO pigs to humans.

Deletion of yeast CWP genes enhances cell permeability to genotoxic agents

We have previously reported the development of a novel genotoxic testing system based on the transcriptional response of the yeast RNR3-lacZ reporter gene to DNA damage. This system appears to be more sensitive than other similar tests in microorganisms, and is comparable with the Ames test. In an effort to further enhance detection sensitivity, we examined the effects of altering major cell wall components on cell permeability and subsequent RNR3-lacZ sensitivity to genotoxic agents. Although inactivation of single CWP genes encoding cell wall mannoproteins had little effect, the simultaneous inactivation of both CWP1 and CWP2 had profound effects on the cell wall structure and permeability. Consequently, the RNR3-lacZ detection sensitivity is markedly enhanced, especially to high molecular weight compounds such as 4-nitroquinoline-N-oxide (> sevenfold) and phleomycin (> 13-fold). In contrast, deletion of genes encoding representative membrane components or membrane transporters had minor effects on cell permeability. We conclude that the yeast cell wall mannoproteins constitute the major barrier to environmental genotoxic agents and that their removal will significantly enhance the sensitivity of RNR-lacZ as well as other yeast-based genotoxic tests.

Formation of high reflective Ni/Ag/Ti/Au contact on p-GaN

A metallization scheme of Ni/Ag/Ti/Au has been developed for obtaining high reflective contacts on p-type GaN. In order to find optimal conditions to get a high reflectivity, we studied samples with various Ni thicknesses, annealing temperatures and annealing times. By annealing at 500 degrees C for 5 min in an O-2 ambient, a reflectivity as high as 94% was obtained from Ni/Ag/Ti/Au (1/120/120/50 nm). The effects of Ti layers on the suppression of Ag agglomeration were investigated by using Auger electron spectroscopy (AES). From AES depth profiles, it is clear that Ti acts as a diffusion barrier to prevent Au atoms from diffusing into the Ag layer, which is important in the formation of high reflectivity.

Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer

A new AlGaN/AlN/GaN high electron mobility transistor (HEMT) structure using a compositionally step-graded AlGaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition (MOCVD). The structure demonstrates significant enhancement of two-dimensional electron gas (2DEG) mobility and smooth surface morphology compared with the conventional HEMT structure with high Al composition AlGaN barrier. The high 2DEG mobility of 1806 cm(2)/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5 mu m x 5 mu m are attributed to the improvement of interfacial and crystal quality by employing the step-graded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5 Omega/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/mm and a maximum drain current density of 800 mA/mm.

Influence of leaf tissue structure on host feeding selection by pea leaf miner Liriomyza huidobrensis (Diptera : Agromyzidae)

Host feeding selection by the female pea leafminer, Liriomyza huidobrensis, on 47 species of plants was studied. The leaves were sectioned by microtome, and 15 characteristics of the leaf tissue structure were measured under a microscope. Correlation analysis between host feeding selection and leaf tissue structure indicated that the preference of host feeding selection was positively correlated with the percentage of moisture content of leaves and negatively with thickness of the epidermis wall, and densities of the palisade and spongy tissues of leaves. Leaf tissue structure was influential in feeding and probing behavior of female L. huidobrensis. So, thickness of epidermis wall, densities of the palisade and spongy tissues can act as a physical barrier to female oviposition. Furthermore, higher densities of palisade and spongy tissues can be considered a resistant trait which affects mining of leaf miner larvae as well. As a result, plants with lower leaf moisture content may not be suitable for the development of L. huidobrensis.

Fabrication of ZnO and its enhancement of charge injection and transport in hybrid organic/inorganic light emitting devices

ZnO nanocrystals were synthesized by hydrolysis in methanol. X-ray diffraction and photoluminescence spectra confirm that good crystallized ZnO nanoparticles were formed. Utilizing those ZnO nanoparticles and poly [2- methoxy-5 - (3',7'-dimethyloctyloxy)- 1,4-phenylenevinylene] (MDMO-PPV), light emitting devices with indium tin oxide (ITO)/poly(3,4-oxyethyleneoxy-thiophene):poly(styrene sulfonate) (PEDOT:PSS)/ ZnO:MDMO-PPV/Al and ITO/PEDOT:PSS/MDMO-PPV/Al structures were fabricated. Electrolummescence (EL) spectra reveal that EL yield of hybrid MDMO-PPV and ZnO nanocrystals devices increased greatly as compared with pristine MDMO-PPV devices. The current-voltage characteristics indicate that addition of ZnO nanocrystals can facilitate electrical injection and charge transport. The decreased energy barrier to electron injection is responsible for the increased efficiency of electron injection. (c) 2007 Elsevier B.V. All rights reserved.

Thermal activation and thermal transfer of localized excitons in InAs self-organized quantum dots

We have investigated the temperature dependence of photoluminescence (PL) properties of a number of InAs/GaAs heterostructures with InAs layer thickness ranging from 0.5 monolayer (ML) to 3 ML. The temperature dependence of the InAs exciton energy and linewidth was found to display a significant difference when the InAs layer thickness is smaller or larger than the critical thickness around 1.7 ML, indicating spontaneous formation of quantum dots (QDs). A model, involving exciton recombination and thermal activation and transfer, is proposed to explain the experimental data. In the PL thermal quenching study, the measured thermal activation energies of different samples demonstrate that the InAs wetting layer may act as a barrier for thermionic emission of carriers in high quality InAs multilayers, while in InAs monolayers and submonolayers the carriers are required to overcome the GaAs barrier to thermally escape from the localized states. (C) 1998 Academic Press Limited.

Carrier relaxation and thermal activation of localized excitons in self-organized InAs multilayers grown on GaAs substrates

We have investigated the temperature dependence of photoluminescence (PL) properties of a number of self-organized InAs/GaAs heterostructures with InAs layer thickness ranging from 0.5 to 3 ML. The temperature dependence of InAs exciton emission and linewidth was found to display a significant difference when the InAs layer thickness is smaller or larger than the critical thickness around 1.7 ML. The fast redshift of PL energy and an anomalous decrease of linewidth with increasing temperature were observed and attributed to the efficient relaxation process of carriers in multilayer samples, resulting from the spread and penetration of the carrier wave functions in coupled InAs quantum dots. The measured thermal activation energies of different samples demonstrated that the InAs wetting layer may act as a barrier for the thermionic emission of carriers in high-quality InAs multilayers, while in InAs monolayers and submonolayers the carriers are required to overcome the GaAs barrier to escape thermally from the localized states.

Influences of catalysis and dispersion of organically modified montmorillonite on flame retardancy of polypropylene nanocomposites

The degradation and flame retardancy of polypropylene/organically modified montmorillonite (PP/OMMT) nanocomposite were studied by means of gas chromatography-mass spectrometry and cone calorimeter. The catalysis of hydrogen proton containing montmorillonite (H-MMT) derived from thermal decomposition of (alkyl) ammonium in the OMMT on degradation of PP strongly influence carbonization behavior of PP and then flame retardancy. Bronsted acid sites on the H-MMT could catalyze degradation reaction of PP via cationic mechanism, which leads to the formation of char during combustion of PP via hydride transfer reaction. A continuous carbonaceous MMT-rich char on the surface of the burned residues, which work as a protective barrier to heat and mass transfer, results from the homogeneous dispersion of OMMT in the PP matrix and appropriate char produced.

松辽盆地南部大情字井地区CO2埋存体地质格架及储层建模

Increasing attentions have been paid to the subsurface geological storage for CO2 in view of the huge storage capacity of subsurface reservoirs. The basic requirement for subsurface CO2 storage is that the CO2 should be sequestrated as supercritical fluids (physical trapping), which may also interact with ambient reservoir rocks and formation waters, forming new minerals (chemical trapping). In order to the effective, durable and safe storage for CO2, enough storage space and stable sealing caprock with strong sealing capacity are necessitated, in an appropriate geological framework. Up till now, hydrocarbon reservoirs are to the most valid and appropriate CO2 storage container, which is well proven as the favorable compartment with huge storage capacity and sealing condition. The thesis focuses on two principal issues related to the storage and sealing capacity of storage compartment for the Qingshankou and Yaojia formations in the Daqingzijing block, Southern Songliao Basin, which was selected as the pilot well site for CO2-EOR storage. In the operation area, three facies, including deltaic plain, deltaic front and subdeep-deep lake facies associations, are recognized, in which 11 subfacies such as subaqueous distributary channel, river- mouth bar, interdistributary bay, sheet sandbody, crevasse splay and overflooding plain are further identified. These subfacies are the basic genetic units in the reservoir and sealing rocks. These facies further comprise the retrogradational and progradational depositional cycles, which were formed base- level rise and fall, respectively. During the regressive or lake lowstand stage, various sands including some turbidites and fans occurred mostly at the bottom of the hinged slope. During the progradation stage, these sands became smaller in size and episodically stepped backwards upon the slope, with greatly expanded and deeped lake. However, most of Cretaceous strata in the study area, localized in the basin centre under this stage, are mainly composed of grey or grizzly siltstones and grey or dark grey mudstones intercalated with minor fine sandstones and purple mudstones. On the base of borehole and core data, these siltstones are widespread, thin from 10 to 50 m thick, good grain sorting, and have relative mature sedimentary structures with graded bedding and cross- lamination or crossbeds such as ripples, which reflect strong hydrodynamic causes. Due to late diagenesis, pores are not widespread in the reservoirs, especially the first member of Qingshankou formation. There are two types of pores: primary pore and secondary cores. The primary pores include intergranular pores and micropores, and the secondary pores include emposieus and fracture pores. Throat channels related to pores is also small and the radius of throat in the first, second and third member of Qingshankou formation is only 0.757 μm, 0.802 μm and 0.631 μm respectively. In addition, based on analyzing the probability plot according to frequency of occurrence of porosity and permeability, they appear single- peaked distribution, which reflects strong hetero- geneity. All these facts indicate that the conditions of physical property of reservoirs are not better. One reason may be provided to interpret this question is that physical property of reservoirs in the study area is strong controlled by the depositional microfacies. From the statistics, the average porosity and permeability of microfacies such as subaqueous distributary channel, channel mouth bar, turbidites, is more than 9 percent and 1md respectively. On the contrary, the average porosity and permeability of microfacies including sand sheet, flagstone and crevasse splay are less than 9 percent and 0.2md respectively. Basically, different hydrodynamic environment under different microfacies can decide different physical property. According to the reservoir models of the first member of Qingshankou formation in the No. well Hei47 block, the character of sedimentary according to the facies models is accord to regional disposition evolution. Meantime, the parameter models of physical property of reservoir indicate that low porosity and low permeability reservoirs widespread widely in the study area, but the sand reservoirs located in the channels are better than other places and they are the main sand reservoirs. The distribution and sealing ability of fault- fractures and caprock are the key aspects to evaluate the stable conditions of compartments to store CO2 in the study area. Based on the core observation, the fractures widespread in the study area, especially around the wells, and most of them are located in the first and second member of Qingshankou formation, almost very few in the third member of Qingshankou formation and Yaojia formation instead. In addition, analyzing the sealing ability of eleven faults in the three-dimensional area in the study area demonstrates that most of faults have strong sealing ability, especially in the No. well Hei56 and Qing90-27. To some extent, the sealing ability of faults in the No. well Hei49, Qing4-6 and Qing84-29 are worse than others. Besides, the deposition environment of most of formations in the study area belongs to moderately deep and deep lake facies, which undoubtedly take advantage to caprocks composed of mudstones widespread and large scale under this deposition environment. In the study area, these mudstones distribute widely in the third member of Qingshankou formation, Yaojia and Nenjiang formation. The effective thickness of mudstone is nearly ~550m on an average with few or simple faults and fractures. In addition, there are many reservoir beds with widely- developed insulated interbeds consist of mudstones or silty mudstone, which can be the valid barrier to CO2 upper movement or leakage through diffusion, dispersion and convection. Above all, the closed thick mud caprock with underdeveloped fractures and reservoir beds can be taken regard as the favorable caprocks to provide stable conditions to avoid CO2 leakage.

Application of laser cladding technology to improve the interface of thermal barrier coatings

The present study is focused on improvement of the adhesion properties of the interface between plasma-sprayed coatings and substrates by laser cladding technology (LCT), Within the laser-clad layer there is a gradient distribution in chemical composition and mechanical properties that has been confirmed by SEM observation and microhardness measurement. The residual stress due to mismatches in thermal and mechanical properties between coatings and substrates can be markedly reduced and smoothed out. To examine the changes of microstructure and crack propagation in the coating and interface during loading, the three-point bending test has been carried out in SEM with a loading device. Analysis of the distribution of shear stress near the interface under loading has been made using the FEM code ANSYS, The experimental results show clearly that the interface adhesion can be improved with LCT pretreatment, and the capability of the interface to withstand the shear stress as well as to resist microcracking has been enhanced.

Electron tunneling through a planar single barrier in HgTe quantum wells with inverted band structures

We present a theoretical study on the electron tunneling through a single barrier created in a two-dimensional electron gas (2DEG) and quantum spin Hall (QSH) bar in a HgTe/CdTe quantum well with inverted band structures. For the 2DEG, the transmission shows the Fabry-Perot resonances for the interband tunneling process and is blocked when the incident energy lies in the bulk gap of the barrier region. For the QSH bar, the transmission gap is reduced to the edge gap caused by the finite size effect. Instead, transmission dips appear due to the interference between the edge states and the bound states originated from the bulk states. Such a Fano-like resonance leads to a sharp dip in the transmission which can be observed experimentally.

Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector.

A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector

A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector is proposed. In comparision with conventional i-CaN/n(+)-GaN structure, an additional thin p-GaN cap layer is introduced on the i-GaN(n(-)-GaN) in the new structure. The simulation results showed that the additional layer makes the dark current to decrease in the photodetector due to the increase of the Schottky barrier height. The effects of thickness and carrier concentration of p-GaN layer on the dark current of the photodetector were also studied. It is suggested that the dark current of the new structure device could be better reduced by employing p-GaN with higher carrier concentration as the cap layer.

Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures

Using the measured capacitance- voltage curves of Ni Schottky contacts with different areas on strained AlGaN/ GaN heterostructures and the current- voltage characteristics for the AlGaN/ GaN heterostructure field- effect transistors at low drain- source voltage, we found that the two- dimensional electron gas (2DEG) electron mobility increased as the Ni Schottky contact area increased. When the gate bias increased from negative to positive, the 2DEG electron mobility for the samples increased monotonically except for the sample with the largest Ni Schottky contact area. A new scattering mechanism is proposed, which is based on the polarization Coulomb field scattering related to the strain variation of the AlGaN barrier layer. (C) 2007 American Institute of Physics.