9 resultados para aminotransf erase

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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The structure of the inhibition patterns is important to the stimulated emission depletion (STED) microscopy. Usually, Laguerre-Gaussian (LG) beam and the central zero-intensity patterns created by inserting phase masks in Gaussian beams are used as the erase beam in STED microscopy. Aberration is generated when focusing beams through an interface between the media of the mismatched refractive indices. By use of the vectorial integral, the effects of such aberration on the shape of depletion patterns and the size of fluorescence emission spot in the STED microscopy are studied. Results are presented as a comparison between the aberration-free case and the aberrated cases. (C) 2009 Optical Society of America

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A scheme for the readout of a hologram recorded in bacteriorhodopsin film with high diffraction efficiency and intensity is suggested and demonstrated. Two weak coherent continuous beams function as the recording beams, and a strong light pulse is used to read the real-time hologram. The width of the readout light pulse is modulated to be short compared with the erase time of the reading beam; the time space between two adjacent pulses is ensured to be longer than the time the beams take to recover the hologram, and high diffraction efficiency and intensity (similar to 11 mW/cm(2)) can be obtained. (C) 1996 Optical Society of America.

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提出一种精确测量波片相位延迟的方法。将待测波片置于起偏器和检偏器之间,转动待测波片和检偏器至不同的位置并探测输出的光强,得到波片的相位延迟。采用光源调制技术和解调技术,抑制了连续光所无法克服的背景光干扰和电子噪声的干扰;将光路分为测量光路和参考光路,采用软件除法技术,消除了光源波动的影响,从而实现波片相位延迟的精确测量。详细分析了影响测量精度的误差因素,主要有光源波长变化、温度变化、入射角倾斜、转台转角误差和光源波动,计算了1064 nm波长时厚度为0.52 mm的λ/4多级结晶石英波片产生的相位延迟误差

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This paper proposes a novel single-electron multiple-valued memory. It is a metal-oxide-semiconductor field effect transistor (MOS)-type memory with multiple separate control gates and floating gate layer, which consists of nano-crystal grains. The electron can tunnel among the grains (floating gates) and between the floating gate layer and the MOS channel. The memory can realize operations of 'write', 'store' and 'erase' of multiple-valued signals exceeding three values by controlling the single electron tunneling behavior. We use Monte Carlo method to simulate the operation of single-electron four-valued memory. The simulation results show that it can operate well at room temperature.

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This paper proposes an embedded ultra low power nonvolatile memory in a standard CMOS logic process. The memory adopts a bit cell based on the differential floating gate PMOS structure and a novel operating scheme. It can greatly improve the endurance and retention characteristic and make the area/bit smaller. A new high efficiency all-PMOS charge pump is designed to reduce the power consumption and to increase the power efficiency. It eliminates the body effect and can generate higher output voltage than conventional structures for a same stage number. A 32-bit prototype chip is fabricated in a 0.18 mu m 1P4M standard CMOS logic process and the core area is 0.06 mm(2). The measured results indicate that the typical write/erase time is 10ms. With a 700 kHz clock frequency, power consumption of the whole memory is 2.3 mu A for program and 1.2 mu A for read at a 1.6V power supply.

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Negative differential resistance (NDR) and memory effect were observed in diodes based on 1,4-dibenzyl C60 (DBC) and zinc phthalocyanine doped polystyrene hybrid material. Certain negative starting sweeping voltages led to a reproducible NDR, making the hybrid material a promising candidate in memory devices. It was found that the introduction of DBC enhanced the ON/OFF current ratio and significantly improved the memory stability. The ON/OFF current ratio was up to 2 orders of magnitude. The write-read-erase-reread cycles were more than 10(6), and the retention time reached 10 000 s without current degradation.

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Memory effects in single-layer organic light-emitting devices based on Sm3+, Gd3+, and Eu3+ rare earth complexes were realized. The device structure was indium-tin-oxide (ITO)/3,4-poly(ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT)/Poly(N-vinyl carbazole) (PVK): rare earth complex/LiF/Ca/Ag. It was found experimentally that all the devices exhibited two distinctive bistable conductivity states in current-voltage characteristics by applying negative starting voltage, and more than 10(6) write-read-erase-reread cycles were achieved without degradation. Our results indicate that the rare earth organic complexes are promising materials for high-density, low-cost memory application besides the potential application as organic light-emitting materials in display devices.

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The fracture behavior of phenolphthalein polyether-ether ketone (PEK-C) affected by physical aging at 200 degrees C was studied by tensile experiments, scanning electron microscopy, and differential scanning calorimetry observations. The ductile-brittle fracture transition (DBT) caused by physical aging can be considered as a competition between fracture mechanisms of crazing and shear yielding. The aging time required for the DBT is found to be around 400 h, based on the morphological studies and tensile experiments. The shear yielding component of the mechanical deformation could erase the aging effect, thus a deaging phenomenon occurs. We found that the deaging phenomenon has an intrinsic relationship with the extent of aging in the specimen and as a result of the fracture behavior. (C) 1995 John Wiley and Sons, Inc.

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In this paper we base on the anisotropic theory and Zoeppritz function of the transmission theory and the law of amplitude versus offset simplify seismic reflection coefficient of different media, analyze the characteristic of the gas or oil saturated stratum or the VTI and HTI models. Discuss the P wave reflection relationship and the meanings of the different parameters. We use measured parameters of a reservoir to simulate the characteristic of the reservoir, study the different effects of stratum saturated with gas or oil and analyze the characteristic of the seismic response of different models which change with different incident angles and different azimuths. Using the field data of logs ,analyze the rock property parameters, build the relationship of logs and parameters by Gassmann theory or empirical function. Calculate the density and the shear modulus and bulk modulus, reconstruct the log curves, calculate shear wave logs and correlate the logs affected by mud and other environmental factors. Finally perform the relationship of the seismic data log of saturated stratum and enhance the ability and reliability in reservoir prediction. Our aim is by the prestack seismic processing to get high solution and amplitude preserved seismic data. Because in incident angle gathers or azimuthal gathers, the low signal to noise ratio and low different covers affect the result of the prestack reservoir prediction. We apply prestack noise erase, cell regularization process and relatively amplitude preservation in the high solution seismic process routine to preserve the characteristic of stratum response, and erase the effects of the noise. In this paper we finished prestack invertion in the BYT survey and fractured reservoir depiction in MB survey. By the invertion and multiple attributes crossplot. we can get the stratum profiles and oil indicator profiles which can predict the distribution of the reservoir and oil. In the MB survey, we get orientation and density of fractured reservoir by the azimuthal seismic amplitude and depict the potential oil and gas reservoir. Prestak invertion works better in distinguishing oil and reservoir.