Experimental study of thermocapillary convection on a liquid bridge consisting of fluid with low Prandtl number in a floating half-zone

A device of mercury liquid bridge of floating half-zone is designed to experimentally explore thermocapillary convection and its instability of a low Prandtl number liquid. Noncontacted diagnostic techniques were developed to monitor surface flow and surface deformation. The surface flow and the influence of a growing surface film (or skin) on the flow were observed. It is shown that the film is a key factor in changing the behavior associated with the thermocapillary convection. The experiment indicates that the critical Marangoni number should be much higher than that expected by the numerical simulation. The condition and process of surface film growth are discussed. The surface oscillation of the mercury bridge wrapped with ''dirt-film'' was observed, and the characteristics and the frequency associated with this oscillation are given.

Optimum hot electron production with low-density foams for laser fusion by fast ignition

We propose a foam cone-in-shell target design aiming at optimum hot electron production for the fast ignition. A thin low-density foam is proposed to cover the inner tip of a gold cone inserted in a fuel shell. An intense laser is then focused on the foam to generate hot electrons for the fast ignition. Element experiments demonstrate increased laser energy coupling efficiency into hot electrons without increasing the electron temperature and beam divergence with foam coated targets in comparison with solid targets. This may enhance the laser energy deposition in the compressed fuel plasma.

Upconversion properties of TM3+/Yb3+ codoped fluorophosphate glasses with low phonon density of states

Fluorophosphate glasses codoped with Tm3+ and Yb3+ were prepared and their thermal stability, phonon states, and upconversion properties were studied. It is found that the increment of phosphate content is good for the thermal stability but increases the phonon density of states. However, the phonon density of states of these fluorophosphate glasses is very low due to the low phosphate content in their composition. The upconversion luminescence spectra were measured under excitation of 970 nm laser diode, and the intense blue (476 nm) and near infrared (794 nm) emission were simultaneous obtained at room temperature. The sensitizing mechanisms of Yb3+ to Tm3+ for blue and red emission contain both sequential and cooperative sensitization. The near infrared emission is a two-photon upconversion process. These researches suggest that when the phosphate content in the composition is low enough, fluorophosphate glass can be suitable host material of Tm3+ codoped with Yb3+ for blue and near infrared upconversion luminescence. (c) 2005 Elsevier B.V All rights reserved.

Avian comparative genomics: reciprocal chromosome painting between domestic chicken (Gallus gallus) and the stone curlew (Burhinus oedicnemus, Charadriiformes) - An atypical species with low diploid number

The chicken is the most extensively studied species in birds and thus constitutes an ideal reference for comparative genomics in birds. Comparative cytogenetic studies indicate that the chicken has retained many chromosome characters of the ancestral avia

Natural selection on EPAS1 (HIF2 alpha) associated with low hemoglobin concentration in Tibetan highlanders

By impairing both function and survival, the severe reduction in oxygen availability associated with high-altitude environments is likely to act as an agent of natural selection. We used genomic and candidate gene approaches to search for evidence of such genetic selection. First, a genome-wide allelic differentiation scan (GWADS) comparing indigenous highlanders of the Tibetan Plateau (3,200 3,500 m) with closely related lowland Han revealed a genome-wide significant divergence across eight SNPs located near EPAS1. This gene encodes the transcription factor HIF2 alpha, which stimulates production of red blood cells and thus increases the concentration of hemoglobin in blood. Second, in a separate cohort of Tibetans residing at 4,200 m, we identified 31 EPAS1 SNPs in high linkage disequilibrium that correlated significantly with hemoglobin concentration. The sex-adjusted hemoglobin concentration was, on average, 0.8 g/dL lower in the major allele homozygotes compared with the heterozygotes. These findings were replicated in a third cohort of Tibetans residing at 4,300 m. The alleles associating with lower hemoglobin concentrations were correlated with the signal from the GWADS study and were observed at greatly elevated frequencies in the Tibetan cohorts compared with the Han. High hemoglobin concentrations are a cardinal feature of chronic mountain sickness offering one plausible mechanism for selection. Alternatively, as EPAS1 is pleiotropic in its effects, selection may have operated on some other aspect of the phenotype. Whichever of these explanations is correct, the evidence for genetic selection at the EPAS1 locus from the GWADS study is supported by the replicated studies associating function with the allelic variants.

Growth of Chlorella vulgaris in cultures with low concentration dimethoate as source of phosphorus

The growth response of Chlorella vulgaris to low concentration of dimethoate, an organophosphorus pesticide, was studied. Results show that cell density, protein content, chlorophyll pigment and alkaline phosphatase activity were all increased, which indicates that low concentration dimethoate can accelerate growth of Chlorella vulgaris. (C) 1997 Elsevier Science Ltd.

Sub-nanosecond silicon-on-insulator optical micro-ring switch with low crosstalk

We demonstrate a sub-nanosecond electro-optical switch with low crosstalk in a silicon-on-insulator (SOI) dual-coupled micro-ring embedded with p-i-n diodes. A crosstalk of -23 dB is obtained in the 20-mu m-radius micro-ring with the well-designing asymmetric dual-coupling structure. By optimizations of the doping profiles and the fabrication processes, the sub-nanosecond switch-on/off time of < 400 ps is finally realized under an electrical pre-emphasized driving signal. This compact and fast-response micro-ring switch, which can be fabricated by complementary metal oxide semiconductor (CMOS) compatible technologies, have enormous potential in optical interconnects of multicore networks-on-chip.

A Bragg-mirror-based semiconductor saturable absorption mirror at 800 nm with low temperature and surface state hybrid absorber

We present a novel 800-nm Bragg-mirror-based semiconductor saturable absorption mirror with low temperature and surface state hybrid absorber, with which we can realize the passive soliton mode locking of a Ti:sapphire laser pumped by 532-nm green laser which produces pulses as short as 37 fs. The reflection bandwidth of the mirror is 30 nm and the pulse frequency is 107 MHz. The average output power is 1.1 W at the pump power of 7.6 W.

Thermo-optic variable optical attenuator with low power consumption fabricated on silicon-on-insulator by anisotropic chemical etching

A thermo-optic Mach-Zehnder (MZ) variable optical attenuator based on silicon waveguides with a large cross section was designed and fabricated on silicon-on-insulator (SOI) wafer. Multimode interferometers were used as power splitters and combiners in the MZ structure. In order to achieve a smooth interface, anisotropic chemical etching of silicon was used to fabricate the waveguides. Isolating grooves were introduced to reduce power consumption and device length. The device has a low power consumption of 210 mW and a response time of 50 mus. (C) 2004 Society of Photo-Optical Instrumentation Engineers.

Rearrangeable nonblocking SOI waveguide thermooptic 4x4 switch matrix with low insertion loss and fast response

A rearrangeable nonblocking 4 x 4 thermooptic silicon-on-insulator waveguide switch matrix at 1.55-mu m integrated spot size converters is designed and fabricated for the first time. The insertion losses and polarization-dependent losses of the four channels are less than 10 and 0.8 dB, respectively. The extinction ratios are larger than 20 dB. The response times are 4.6 mu s for rising edge and 1.9 mu s for failing edge.

A silicon-on-insulator-based thermo-optic waveguide switch with low insertion loss and fast response

A silicon-on-insulator-based thermo-optic waveguide switch integrated with spot size converters is designed and fabricated by inductively coupled plasma reactive ion etching. The device shows good characteristics, including low, insertion loss of 8 +/- 1 dB for wavelength 1530-1580 nm and fast response times of 4.6 As for rising edge and 1.9 mu s for failing edge. The extinction ratios of the two channels are 19.1 and 18 dB, respectively.

Fabrication and analysis of 2x2 thermo-optic SOI waveguide switch with low power consumption and fast response by anisotropy chemical etching

A low power consumption 2 x 2 thermo-optic switch with fast response was fabricated on silicon-on-insulator by anisotropy chemical etching. Blocking trenches were etched on both sides of the phase-shifting arms to shorten device length and reduce power consumption. Thin top cladding layer was grown to reduce power consumption and switching time. The device showed good characteristics, including a low switching power of 145 mW and a fast switching speed of 8 +/- 1 mus, respectively. Two-dimensional finite element method was applied to simulate temperature field in the phase-shifting arm instead of conventional one-dimensional method. According to the simulated result, a new two-dimensional index distribution of phase-shifting arm was determined. Consequently finite-difference beam propagation method was employed to simulate the light propagation in the switch, and calculate the power consumption as well as the switching speed. The experimental results were in good agreement with the theoretical estimations. (C) 2004 Elsevier B.V. All rights reserved.

Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling

The depth distribution of the strain-related tetragonal distortion e(T) in the GaN epilayer with low-temperature AlN interlayer (LT-AlN IL) on Si(111) substrate is investigated by Rutherford backscattering and channeling. The samples with the LT-AlN IL of 8 and 16 nm thickness are studied, which are also compared with the sample without the LT-AlN IL. For the sample with 16-nm-thick LT-AlN IL, it is found that there exists a step-down of e(T) of about 0.1% in the strain distribution. Meanwhile, the angular scan around the normal GaN <0001> axis shows a tilt difference about 0.01degrees between the two parts of GaN separated by the LT-AlN IL, which means that these two GaN layers are partially decoupled by the AlN interlayer. However, for the sample with 8-nm-thick LT-AlN IL, neither step-down of e(T) nor the decoupling phenomenon is found. The 0.01degrees decoupled angle in the sample with 16-nm-thick LT-AlN IL confirms the relaxation of the LT-AlN IL. Thus the step-down of e(T) should result from the compressive strain compensation brought by the relaxed AlN interlayer. It is concluded that the strain compensation effect will occur only when the thickness of the LT-AlN IL is beyond a critical thickness. (C) 2004 American Institute of Physics.

End-pumped continuous-wave passively modelocked Nd : YVO4 laser with low pump power

A simple cw mode-locked solid-state laser, which is end-pumped by a low-power laser diode, was demonstrated by optimizing the laser-mode size inside the gain medium. The optimum ratio between mode and pump spot sizes inside the laser crystal was estimated for a cw mode-locked laser, taking into account the input pump power. Calculation and experiment have shown that the optimum ratio was about 3 when the pump power is 2 W, which is different from the value regularly used in passively mode-locked solid-state lasers. This conclusion is also helpful in increasing the efficiency of high-power ultrashort lasers. (C) 2006 Society of Photo-Optical Instrumentation Engineers.

Q-switched and mode-locked diode-pumped Nd : GdVO4 laser with low temperature GaAs saturable absorber

Low temperature GaAs (LT-GaAs) was successfully grown at the temperature of 550 degrees C by metal organic vapor phase epitaxy on a semi-insular GaAs substrate. With such an absorber as well as an output coupler we obtain Q-switched mode-locked (QML) 1064 nm Nd:GdVO4 laser pumped by diode laser with high repetition rate, formed with a simple flat-flat cavity. The repetition rate of the Q-switched envelope increased from 100 to 660 kHz as the pump power increased from 2.28 to 7.29 W. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of similar to 1.36 GHz. A maximum average output power of 953 mW was obtained. The dependence of the operational parameters on the pump power was also investigated experimentally. (C) 2005 Elsevier B.V. All rights reserved.