8 resultados para YBCO

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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Epitaxial YBCO superconducting films were deposited on the single crystal LaAlO3 (001) substrate by metal organic deposition method. All YBCO films were fired at 820 degrees C in humidity range of 2.6%-19.7% atmosphere. Microstructure of YBCO thin films was analyzed by means of X-ray diffraction (XRD) and scanning electron microscopy (SEM). Superconducting properties of YBCO films were measured by four-probe method. XRD results showed that the second phase (such as BaF2)and a-axis-oriented grains existed in the films prepared at 2.6% humidity condition; a-axis-oriented grains increased in the film prepared at higher than 4.2% humidity condition; almost pure c-axias-oriented grains existed in the films fired at 4.2% humidity condition. Morphologies of the YBCO films showed that all films had a smooth and crack-free surface. YBCO film prepared at 4.2% humidity condition showed J(c) value of 3.3 MA/cm(2) at 77 K in self-field.

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By neutron diffraction and other experiments, we have found that oxygen ions in YBCO can diffuse out of the sample in vacuo at room and low temperature, while the T(c) decreases greatly. We have also found that if the vacuum-deoxidation process lasts for several days there will be a damping oscillation of T(c) with time (t), and higher vacuum corresponds to a greater amplitude and a shorter period. We tentatively think that T(c) should satisfy the following function: T(c0) is-proportional-to T(c)e(-betat)cos (omegat + phi); it may be due to the diffusion of oxygen and the saturation of the valence state.

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采用电子束沉积制备YBCO超导薄膜,研究了760℃-840℃的不同退火温度下高温热处理对YBCO薄膜双轴织构,表面形貌及超导性能的影响.超导临界电流密度测试,X射线衍射(XRD)和扫描电镜(SEM)的结果表明,退火温度在在800℃时,YBCO薄膜具有良好的织构和平整致密的表面形貌,在77K自场下的临界电流密度J可达4.2×106/cm2

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对于简单二元晶体(I-VII,II-VI,III-V族晶体),我们发现了它们的晶格能、德拜温度、等离子体能量、体变模量间的一些简单关系,分析发现了德拜模型的局限性,得到离子品体晶格能最小可能值为546kjmol-1,也发现碱金属卤化物的晶格能与格波的纵、横光学支的波数都呈线性关系,相同阳离子及相同阴离子的碱金属卤化物的LEELS、HEELS,ORS的谱峰能量值也与晶格能呈线性关系,说明这些量都与离子间的{妾合强度有一定的关系。基于复杂靛.体化学键介电理论,并考虑到晶格能和键性的关系,我们发展了一种新的经验地计算晶.格能的方法,晶格能被视为是由各类键贡献的,对于每类键,其对晶格能的贡献被分为离子性和共价性两部分,复杂离子晶体被分解后得到的各类键可做相似处理。我们又基于Born理论模型,考虑到离子晶体中离子间主要作用是库仑作用及电子壳层的排斥作用,发展了另一种简单的计算晶格能的方法。对于很多静电键为主的功能材料(如巨磁阻材料、超导体等),用这两种方法计算的晶格能值与实验值及他人的计算结果相当接近,它们可以作为复杂离子晶体晶格能可信I均估算方法。我们还计算了YBCO体系的晶格能,并得到其与氧浓度的函数关系。

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本论文包括两部分内容。第一部分为“Cu(III)及相关化合物的合成和性质的研究”;第二部分为“稀土复合氟化物的电性、氧敏和氢敏性质”。第一部分的主要内容有:1.制备了Na_4H[Cu(H_2TeO_6)_2]·17H_2O和Na_4K[Cu(HIO_6)_2]·12H_2O的Cu(III)单晶配合物。2.在比较相应的Cu(II)化合物的条件下,详细地研究了这二个Cu(III)配合物的电子光谱和Cu2p光电子能谱,由于价态升高,场强参数增大,Cu(III)化合物的d-d跃迁相对于Cu(II)化合物d-d跃迁,发生“蓝移”。3.成功地实现了用O_3和电化学方法对强碱溶液中Cu(II)配合物的氧化,获得了二个新的Cu(III)固态配合物Ba_4K[Cu(H_2TeO_6)_2] (OH)_4·6H_2O和Ba_3K[Cu(HIO_6)_2] (KOH)_(0.5)(OH)_2·8H_2O利用化学分析、磁学性质、电子光谱和Cu2p XPS,对这二个化合物进行了表征。4.对BaCuO_(2.5)的合成、电学性质、磁学性质、Cu(III) ESR和Cu2p XPS进行了研究。5.以Na_4K[Cu(HIO_6)_2]·12H_2O和BaCuO_(2.5)为参照物,用电子光谱和Cu2p XPS,确认了YBa_2Cu_3O_(7-5)中的高价态的铜。6.考察了以Cu(III)化合物作为Cu部分原料所合成的YBCO系超导材料的电学性质。第二部分的主要内容有:1.测试了元件“BiF_3(Bi)/Ce_(0.95)Ca_(0.05)F_(2.95)/Pt”的氧敏、氢敏等性能。从室温到130 ℃,元件的氧敏机理为“双电子反应”,电动势(EMF)与氧分压遵循Nernst关系式。室温时,元件对空气中100Pa或1000Pa氢气的响应时间仅为15秒或短于5秒;氢分压在16Pa~1000Pa范围内,EMF与氢分压的对数呈线性关系,斜率为-116mV/decade, 敏感机理表现为“混合电极电势”。元件具有良好的氢敏性能,并有一定的选择性。2.合成并测试了La_(1-x)Pb_xF_(3-x)(X = 0.00 ~ 0.15)的电导率,La_(0.95)Pb_(0.05)F_(2.95)的电导率最高,比LaF_3高约一个数量级。以La_(0.95)Pb_(0.05)F_(2.95)为固体电解质材料,Pd或Pt为敏感电极,BiF_3(Bi)或PbF_2(Pb)为参比电极,制成了四个元件。其中,“BiF_3(Bi)/La_(0.95)Pb_(0.05)F_(2.95)/Pt”具有最好的氧敏、氢敏性能。从室温到150 ℃,元件的EMF与1gPo_2附合Nernst关系式。150 ℃时,元件对氧气的响应时间仅为80秒。室温下,元件对空气中100Pa或1000Pa氢气的响应时间仅为75秒或15秒,元件的电动势EMF与氢分压的关系可表示为“E=E_o-96lgP_(H2)(mV)”。元件对CO有较差的敏感性能,而对空气中甲烷、乙烷或乙炔(≤1000Pa)不具敏感性能。3.合成并测试了Ln_(1-x)Pb_xF_(3-x)(Ln=Ce、Pr、Nd和Gd、Dy、Ho、Yb)的电性。前四个系列为离子导体材料,后三个系列可能为P型半导体。随着Ln原子序数增大,LnF_3导电性能变差;La~(3+)、Ce~(3+)、Pr~(3+)、Nd~(3+)与Pb~(2+)离子半径差异较小,LnF_3和PbF_2可以形成固溶体;而Gd~(3+)、Dy~(3+)、Ho~(3+)、Yb~(3+)与Pb~(2+)离子半径差异较大,LnF_3和PbF_2难以形成固溶体。

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A technique for analysis of total oxygen contents in high-T(c) superconducting films is demonstrated. It uses elastic backscattering (EBS) of 1.5-2.5 MeV protons. By comparing the H EBS spectra from substrate materials, the absolute oxygen content in the films can be easily calculated. It is estimated that the analysis can be accurate to better than 5% for YBCO films with thicknesses from several hundred angstroms to several microns. Comparisons with RBS are given and advantages of this technique are shown.

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在Y-Ba-Cu-Nb-O系统中,当Nb的含量较低时(x≤0.3),没有发现其晶格常数和超导转变温度Tc有明显变化,掺Nb能形成YBa_2NbO_6,BaNbO_3等;YBa_2NbO_6的新相比YBCO优先形成。当Nb含量x≥0.3时,少量的Nb进入123相的晶格,这种情况使b-轴变短,斜方变形加大,且Tc降低。

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研究了Y_(1-x)Ag_xBa_2Cu_3O_(7-y)体系的结构。当x≤0.15时.该体系是固溶体.当0.150.5时,体系失去超导电性。在固溶体范围,Ag的置换改善了纯的YBCO脆性,增加了材料的机械强度,改善了颗粒弱连接.使体系的Jc从94.6A/cm~2提高到362A/cm~2。