Laminar Plasma Spraying of Metal Wire in Atmosphere

利用层流等离子体射流，以普通工程铁丝为喷涂材料，在Q235基体表面制备金属涂层，并利用喷涂系统的参数可调性研究工艺参数对涂层质量的影响。结果表明，利用层流等离子体射流喷涂可以得到具有典型层状结构、氧化较少的致密涂层。

Subcooled pool boiling on thin wire in microgravity

A new set of experimental data of subcooled pool boiling on a thin wire in rnicrogravity aboard the 22nd Chinese recoverable satellite is reported in the present paper. The temperature-control led heating method is used. The results of the experiments in normal gravity before and after the flight experiment are also presented, and compared with those in microgravity. The working fluid is degassed R113 at 0.1 MPa and subcooled by 26 degrees C nominally. A thin platinum wire of 60 mu m in diameter and 30 mm in length is simultaneously used as heater and thermometer. It is found that the heat transfer of nucleate pool boiling is slightly enhanced in microgravity comparing with those in normal gravity. It is also found that the correlation of Lienhard and Dhir can predict the CHF with good agreement, although the range of the dimensionless radius is extended by three or more decades above the originally set limit. Three critical bubble diameters are observed in microgravity, which divide the observed vapor bubbles into four regimes with different sizes. Considering the Marangoni effect, a qualitative model is proposed to reveal the mechanism underlying the bubble departure processes, and a quantitative agreement can also be acquired.

Temperature-dependent transport and spin accumulation in a quantum wire with Rashba spin-orbit interaction

We study the theory of temperature-dependent electron transport, spin polarization, and spin accumulation in a Rashba spin-orbit interaction (RSOI) quantum wire connected nonadiabatically to two normal conductor electrode leads. The influence of both the wire-lead connection and the RSOI on the electron transport is treated analytically by means of a scattering matrix technique and by using an effective free-electron approximation. Through analytical analysis and numerical examples, we demonstrate a simple way to design a sensitive spin-transfer switch that operates without applying any external magnetic fields or attaching ferromagnetic contacts. We also demonstrate that the antisymmetry of the spin accumulation can be destroyed slightly by the coupling between the leads and the wire. Moreover, temperature can weaken the polarization and smear out the oscillations in the spin accumulation.

A photonic wire-based directional coupler based on SOI

A photonic wire-based directional coupler based on SOI was fabricated by e-beam lithography (EBL) and the inductively coupled plasma (ICP) etching method. The size of the sub-micron waveguide is 0.34 mu m x 0.34 mu m, and the length in the coupling region and the separation between the two parallel waveguides are 410 and 0.8 mu m, respectively. The measurement results are in good agreement with the results simulated by 3D finite-difference time-domain method. The transmission power from two output ports changed reciprocally with about 23 nm wavelength spacing between the coupled and direct ports. The extinction ratio of the device was between 5 and 10 dB, and the insertion loss of the device in the wavelength range 1520-1610 nm was between 22 and 24 dB, which included an about 18.4 +/- 0.4 dB coupling loss between the taper fibers and the polished sides of the device. (c) 2008 Elsevier B.V. All rights reserved.

Compact four-channel reconfigurable optical add-drop multiplexer using silicon photonic wire

We designed and fabricated a four-channel reconfigurable optical add-drop multiplexer based on silicon photonic wire waveguide, which is controlled through the thermo-optic effect. The effective footprint of the device is about 1000 x 500 mu m(2). The minimum insertion loss including the transmission loss and coupling loss is about 10.7 dB. The tuning bandwidth is about 17 nm, the average tuning efficiency about 6.11 mW/nm and the tuning speed about 24.5 kHz. (c) 2009 Elsevier B.V. All rights reserved.

Four-channel reconfigurable optical add-drop multiplexer based on photonic wire waveguide

We designed and fabricated a four-channel reconfigurable optical add-drop multiplexer based on silicon photonic wire waveguide controlled through thermo-optic effect. The effective footprint of the device is about 1000 x 500 mu m(2). The minimum insertion loss is about 10.7 dB and the tuning bandwidth about 17 nm. The average tuning power efficiency is about 6.187 mW/nm and the tuning speed about 24.4 kHz. The thermo-optic polarization-rotation effect is firstly reported in this paper. (C) 2009 Optical Society of America

Four-channel reconfigurable optical add-drop multiplexer based on photonic wire waveguide: erratum

An erratum is presented to correct the calculation of the filtering bandwidth of the micro-ring resonator. (C) 2009 Optical Society of America

THz-field-induced electronic transmission step-structure for a quantum wire

We study theoretically the low-temperature electronic transport property of a straight quantum wire under the irradiation of a finite-range transversely polarized external terahertz (THz) electromagnetic (EM) field. Using the free-electron model and the scattering matrix approach, we show an unusual behaviour of the electronic transmission of this system. A sharp step-structure appears in the electronic transmission probability as the EM field strength increases to a threshold value when a coherent EM field is applied. We demonstrate that this effect physically comes from the inelastic scattering of electrons with lateral photons through intersubband transitions.

Spin-polarized ballistic transport in diluted magnetic semiconductor quantum wire systems

The energy dispersion of an electron in a double quantum wire with a diluted magnetic semiconductor barrier in between is calculated. An external magnetic field modifies significantly the energy dispersion of the electron which is different for the two spin states. The conductance exhibits many interesting peaks and dips which are directly related to the energy dispersions of the different electron spin states. These phenomena are attributed to the interwell coupling which can be tuned by the magnetic field due to the s-d exchange interaction.

Room-temperature continuous-wave operation of InAs quantum-wire laser on InP(001) substrate

A self-assembled quantum-wire laser structure was grown by solid-source molecular beam epitaxy in an InAlGaAs-InAlAs matrix oil InP(001) substrate. Ridge-waveguide lasers were fabricated and demonstrated to operate at a heatsink temperature tip to 330 K in continuous-wave (CW) mode. The emission wavelength of the lasers with 5 mm-long cavity was 1.713 mu m at room temperature in CW mode. The temperature stability of the devices was analysed and the characteristic temperature was found to be 47 K in the mnge of 220-320 K.

Bonding-wire compensation effect on the packaging parasitics of optoelectronic devices

The effect of bonding-wire compensation on the capacitances of both the submount and the laser diode is demonstrated in this paper. The measured results show that the small-signal magnitude-frequency responses of the TO packaged laser and photodiode modules can be improved by properly choosing the length of the bonding wire. After packaging, the phase-frequency responses of the laser modules can also be significantly improved (c) 2005 Wiley Periodicals, Inc.

Structual and optoelectronic properties of polycrystalline silicon thin films prepared by hot-wire chemical vapor deposition at low temperatures

Polycrystalline silicon thin films were prepared by hot-wire chemical vapor deposition ( HWCVD) on glass at 250 degreesC with W or Ta wire as the catalyzers. The structual and optoelectronic properties as functions of the filament temperature, deposition pressure and the filament-substrate distance were studied, and the optimized polycrystalline silicon thin films were obtained with X-c > 90 % ( X-c denotes the crystalline ratio of the film), crystal grain size about 30-40nm, R-d approximate to 0.8nm/s, sigma(d) about 10(-7) - 10(-6) Omega(-1) cm(-1), Ea(a) approximate to 0.5eV and E-opt less than or equal to 1.3eV.