Passively mode-locking Nd : Gd0.5Y0.5VO4 laser with an In(0.25)Ga(0.75)Aa absorber grown at low temperature

We have demonstrated stable self-starting passive mode locking in a diode-end-pumped Nd:Gd-0.8-Y0.5VO4 laser by using an In0.25Ga0.75As absorber grown at low temperature (LT In0.25Ga0.75As absorber). An In0.25Ga0.75As single-quantum-well absorber, which was grown directly on the GaAs buffer by use of the metal-organic chemical-vapor deposition technique, acts simultaneously as a passive mode-locking device and as an output coupler. Continuous-wave mode-locked pulses were obtained at 1063.5 nm. We achieved a pulse duration of 2.6 ps and an average output power of 2.15 W at a repetition rate of 96.4 MHz. (c) 2005 Optical Society of America.

High-mobility Ga-polarity GaN achieved by NH3-MBE

GaN epilayers were grown on (0001) sapphire substrates by NH3-MBE and RF-MBE (radio frequency plasma). The polarities of the epilayers were investigated by in-situ RHEED, chemical solution etching and AFM surface examination. By using a RF-MBE grown GaN layer as template to deposit GaN epilayer by NH3-MBE method, we found that not only Ga-polarity GaN films were repeatedly obtained, but also the electron mobility of these Ga-polarity films was significantly improved with a best value of 290 cm(2)/V.s at room temperature. Experimental results show it is an easy and stable way for growth of high quality Ga-polarity GaN films.

Influence of open-tube Ga diffusion on the characteristics for thyristor

Open-tube Ga diffusion into a SiO2/Si structure was used for fabrication of the high speed thyristor. The advantages of open-tube Ga diffusion are as follows; it is easier to operate and easier to control the profile of the Ga concentration during processing, a clean surface, which is free from alloy spots can be obtained, this technique ensures to improve the on-state characteristics and dynamic characteristics.

Search For Critical Slip Surface In Slope Stability Analysis By Spline-Based Ga Method

The stability of a soil slope is usually analyzed by limit equilibrium methods, in which the identification of the critical slip surface is of principal importance. In this study the spline curve in conjunction with a genetic algorithm is used to search the critical slip surface, and Spencer's method is employed to calculate the factor of safety. Three examples are presented to illustrate the reliability and efficiency of the method. Slip surfaces defined by a series of straight lines are compared with those defined by spline curves, and the results indicate that use of spline curves renders better results for a given number of slip surface nodal points comparing with the approximation using straight line segments.

The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N

Diluted magnetic semiconductor (Ga,Mn)N were prepared by the implantation of Mn ions into GaN/Al2O3 substrate. Clear X-ray diffraction peak from (Ga,Mn)N is observed. It indicates that the solid solution (Ga,Mn)N phase was formed with the same lattice structure as GaN and different lattice constant. Magnetic hysteresis-loops of the (Ga,Mn)N were obtained at room temperature (293 K) with the coercivity of about 2496.97 A m(-1). (C) 2003 Elsevier B.V. All rights reserved.

(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit

(Ga, Gd, As) film was fabricated by the mass-analyzed dual ion-beam epitaxy system with the energy of 1000 eV at room temperature. There was no new peak found except GaAs substrate peaks (0 0 2) and (0 0 4) by X-ray diffraction. Rocking curves were measured for symmetric (0 0 4) reflections to further yield the lattice mismatch information by employing double-crystal X-ray diffraction. The element distributions vary so much due to the ion dose difference from AES depth profiles. The sample surface morphology indicates oxidizing layer roughness is also relative to the Gd ion dose, which leads to islandlike feature appearing on the high-dose sample. One sample shows ferromagnetic behavior at room temperature. (C) 2003 Elsevier B.V. All rights reserved.

低能离子束制备(Ga,Gd,As)薄膜

室温条件下 ,用离子束外延设备制备 ( Ga,Gd,As)样品 ,X射线衍射 ( XRD)结果表明除了 Ga As衬底峰 ,没有发现其他新相的衍射峰。俄歇电子能谱 ( AES)分析了样品中元素随深度的变化 ,不同样品中元素的分布有着不同的特点。并运用原子力显微镜 ( AFM)研究了样品表面的形貌特点 ,表明样品表面的粗糙度与 Gd注入过程中在样品表面沉积的多少有关。运用交变梯度磁强计 ( AGM)对薄膜进行磁性分析 ,结果表明有的样品在室温条件下出现铁磁性 ,但金属钆本身具有室温铁磁性 ,因而需要进一步分析。

中国力学学会史 = A history of Chinese society of theoretical and applied mechanics

《中国力学学会史》是《中国学会史丛书》之一。是一部全面系统记述中国力学学会建立与发展历程的专著。 《中国力学学会史》全书30万字，书中不但重点对学会的初创情况、发展过程、组织建设、学术交流、分支机构等进行了专门介绍，还特别收录了记述学会重大活动情况的大事记、名人与学会发展的丰富资料和一些极有史料价值的历史照片，旨在反映学会在不同时期的活动概况及其在中国力学界中发挥的桥梁与纽带作用。 中国力学学会是中国科协的组成部分，也是我国著名的学术团体之一，仅以此书的编著出版，纪念中国科协成立50周年和中国力学学会成立50多周年。本书可供力学界和科技界有关部门及工作者、各学会相关人员、大专院校师生参阅，也可作为组织和开展国内外学术交流研究的参考资料。

Hit-or-miss representation of a pattern spectrum and its optical implementation

We demonstrate that a pattern spectrum can be decomposed into the union of hit-or-miss transforms with respect to a series of structure-element pairs. Moreover we use a Boolean-logic function to express the pattern spectrum and show that the Boolean-logic representation of a pattern spectrum is composed of hit-or-miss min terms. The optical implementation of a pattern spectrum is based on an incoherent optical correlator with a feedback operation. (C) 1996 Optical Society of America

FUZZY SOLID SETS FOR MATHEMATICAL MORPHOLOGY AND OPTICAL IMPLEMENTATION

Fuzzy sets in the subject space are transformed to fuzzy solid sets in an increased object space on the basis of the development of the local umbra concept. Further, a counting transform is defined for reconstructing the fuzzy sets from the fuzzy solid sets, and the dilation and erosion operators in mathematical morphology are redefined in the fuzzy solid-set space. The algebraic structures of fuzzy solid sets can lead not only to fuzzy logic but also to arithmetic operations. Thus a fuzzy solid-set image algebra of two image transforms and five set operators is defined that can formulate binary and gray-scale morphological image-processing functions consisting of dilation, erosion, intersection, union, complement, addition, subtraction, and reflection in a unified form. A cellular set-logic array architecture is suggested for executing this image algebra. The optical implementation of the architecture, based on area coding of gray-scale values, is demonstrated. (C) 1995 Optical Society of America

Morphological ordered gray-scale erosion for optical image processing

An ordered gray-scale erosion is suggested according to the definition of hit-miss transform. Instead of using three operations, two images, and two structuring elements, the developed operation requires only one operation and one structuring element, but with three gray-scale levels. Therefore, a union of the ordered gray-scale erosions with different structuring elements can constitute a simple image algebra to program any combined image processing function. An optical parallel ordered gray-scale erosion processor is developed based on the incoherent correlation in a single channel. Experimental results are also given for an edge detection and a pattern recognition. (C) 1998 Society of Photo-Optical Instrumentation Engineers. [S0091-3286(98)00306-7].

Upconversion and fluorescence spectral studies of Er3+/Yb3+-codoped Bi(2)Q(3)-GeO2-Ga(2)Q(3)-Na2O glasses

The absorption spectra and upconversion fluorescence spectra of Er3+/-Yb3+-codoped natrium-gallium-germanium-bismuth glasses are measured and investigated. The intense green (533 and 549 nm) and red (672 nm) emission bands were simultaneously observed at room temperature. The quadratic dependence of the green and red emission on excitation power indicates that the two-photon absorption processes occur. The influence of Ga2C3 on upconversion intensity is investigated. The intensity of green emissions increases slowly with increasing Ga2O3 content, while the intensity of red emission increases significantly. The possible upconversion mechanisms for these glasses have also been discussed. The maximum phonon energy of the glasses determined based on the infrared (IR) spectral analysis is as low as 740 cm(-1). The studies indicate that Bi2O3-GeO2-Ga2O3-Na2O glasses may be potential materials for developing upconversion optical devices (c) 2006 Published by Elsevier B.V.

Dy^3＋掺杂Ge-Ga-Se硫系玻璃的性质(英文)

实验制备了Dy^3+掺杂Ge-Ga���Se系统硫系玻璃样品，测试了玻璃的密度、显微硬度、可见-红外透射光谱、荧光光谱以及荧光寿命。根据玻璃的密度计算了玻璃的摩尔体积以及致密度。讨论了玻璃的这些性能随系统平均配位数的变化关系。实验结果表明：该系统中配位数大于2．67的玻璃在1．3μm具有较好的发光性能，荧光寿命在440-530μs之间，当玻璃组成位于化学门槛即平均配位数为2．73时玻璃的发光强度最强。

Enhanced luminescence from transparent Ni2+-doped MgO-Al2O3-SiO2 glass ceramics by Ga<inf>2O3 addition

Transparent Ni2+-doped MgO-Al2O3-SiO2 glass ceramics without and with Ga2O3 were synthetized. The precipitation of spinel nanocrystals, which was identified as solid solutions in the glass ceramics, could be favored by Ga2O3 addition and their sizes were about 7.6 nm in diameter. The luminescent intensity of the Ni2+-doped glass ceramics was largely enhanced by Ga2O3 addition which could mainly be caused by increasing of Ni2+ in the octahedral sites and the reduction of the mean frequency of phonon density of states in the spinel nanocrystals of solid solutions. The full width at half maximum (FWHM) of emissions for the glass ceramics with different Ga2O3 content was all more than 200 nm. The emission lifetime increased with the Ga2O3 content and the longest lifetime is about 250 mu s. The Ni2+-doped transparent glass ceramics with Ga2O3 addition have potential application as broadband optical amplifier and laser materials. (C) 2007 Elsevier Ltd. All rights reserved.

GeO2 : Bi, M (M = Ga, B) glasses with super-wide infrared luminescence

Broadband infrared luminescence covering the optical telecommunication wavelength region of 0, E and S bands was observed in GeO2: Bi, M (M = Ga, B) glasses prepared by conventional melting-quenching technique. The luminescence with a maximum at around 1320 nm possesses a full width at half maximum larger than 300 nm and mean fluorescent lifetime longer than 500 mus when excited by an 808 nm-laser. These glasses may have potential applications in widely tunable laser and super-broadband optical amplifier for the optical communications. (C) 2005 Elsevier B.V. All rights reserved.