Optical gain at 1550 nm from colloidal solution of Er3+-Yb3+ codoped NaYF4 nanocubes

We demonstrated optical amplification at 1550 nm with a carbon tetrachloride solution of Er3+-Yb3+ codoped NaYF4 nanocubes synthesized with solvo-thermal route. Upon excitation with a 980 nm laser diode, the nanocube solution exhibited strong near-infrared emission by the I-4(13/2) -> I-4(15/2) transition of Er3+ ions due to energy transfer from Yb3+ ions. We obtained the highest optical gain coefficient at 1550 nm of 0.58 cm(-1) for the solution with the pumping power of 200 mW. This colloidal solution might be a promising candidate as a liquid medium for optical amplifier and laser at the optical communication wavelength. (C) 2009 Optical Society of America

Deep-etched high-density fused-silica transmission gratings with high efficiency at a wavelength of 1550 nm

We describe the design, fabrication, and excellent performance of an optimized deep-etched high-density fused-silica transmission grating for use in dense wavelength division multiplexing (DWDM) systems. The fabricated optimized transmission grating exhibits an efficiency of 87.1% at a wavelength of 1550 nm. Inductively coupled plasma-etching technology was used to fabricate the grating. The deep-etched high-density fused-silica transmission grating is suitable for use in a DWDM system because of its high efficiency, low polarization-dependent loss, parallel demultiplexing, and stable optical performance. The fabricated deep-etched high-density fused-silica transmission gratings should play an important role in DWDM systems. (c) 2006 Optical Society of America.

Characteristics of 980/1550 nm WDM coupler based on planar curved waveguides

A wavelength division multiplexer (WDM) for 980/1550 nm based on planar curved waveguide coupler (CWC) is proposed. Compared with conventional parallel straight waveguide coupler (SWC), this structure has more flexibility with two variable parameters of bending radius R and minimum edge-to-edge spacing do, which are the two main parameters for the splitting ratio of coupler and decrease the complexity of device design and fabrication. Based on coupled mode theory (CMT) and waveguide theory, R and do of the WDM CWC are designed to be R = 13.28 m and d(0) = 4.39 mu m. The contrast ratio (CR) and insertion loss (IL) for 980 and 1550 nm are CR1 = 24.62 dB, CR2 = 24.56 dB and IL1 = 0.014 dB, IL2 = 0.015 dB, respectively. The 3D beam propagation method (BPM) is used to verify the validity of the design result. The influence of R and d(0) variations on the device performance is analyzed. For CR > 20 dB, the variation ranges of R and d(0) should be within -0.10 to +0.44 m and -0.05 to + 0.02 mu m, respectively. (c) 2006 Elsevier GmbH. All rights reserved.

Long rectangle resonator 1550 nm AlGaInAs/InP lasers

1550 nm AlGaInAs/InP long rectangle resonator lasers with three sides surrounded by SiO2 and p electrode layers are fabricated by planar technology, and room-temperature continuous-wave lasing is realized for a laser with a length of 53 mu m and a width of 2 mu m. Multiple peaks with wavelength intervals of Fabry-Perot mode intervals and mode Q factors of about 400 and a lasing mode with a Q factor over 8000 are observed from the lasing spectrum at threshold current. The numerical results of the FDTD simulation indicate that the lasing mode may be a whispering-gallery mode, which is a coupled mode of two high-order transverse modes of the waveguide.

Zero biased Ge-on-Si photodetector with a bandwidth of 4.72 GHz at 1550 nm

High quality Ge was epitaxially grown on Si using ultrahigh vacuum/chemical vapor deposition (UHV/CVD). This paper demonstrates efficient germanium-on-silicon p-i-n photodetectors with 0.8 mu m Ge, with responsivities as high as 0.38 and 0.21 A/W at 1.31 and 1.55 mu m, respectively. The dark current density is 0.37 mA/cm(2) and 29.4 mA/cm(2) at 0 V and a reverse bias of 0.5 V. The detector with a diameter of 30 mu m, a 3 dB-bandwidth of 4.72 GHz at an incident wavelength of 1550 nm and zero external bias has been measured. At a reverse bias of 3 V, the bandwidth is 6.28 GHz.

Design and fabrication of polarization-insensitive 1550 mm semiconductor optical amplifiers

Polarization-insensitive semiconductor optical amplifiers (SOA's) with tensile-strained multi-quantum-wells as actice regions are designed and fabricated. The 6x6 Luttinger-Kohn model and Bir-Pikus Hamiltonian are employed to calculate the valence subband structures of strained quantum wells, and then a Lorentzian line-shape function is combined to calculate the material gain spectra for TE and TM modes. The device structure for polarization insensitive SOA is designed based on the materialde gain spectra of TE and TM modes and the gain factors for multilayer slab waveguide. Based on the designed structure parameters, we grow the SOA wafer by MOCVD and get nearly magnitude of output power for TE and TM modes from the broad-area semiconductor lasers fabricated from the wafer.

Enhanced Plasticity of Zr-Based Bulk Metallic Glass Matrix Composite with Ductile Reinforcement

A composite material containing uniformly distributed micrometer-sized Nb particles in a Zr-based amorphous matrix was prepared by suction cast. The resulting material exhibits high fractured strength over 1550 MPa and enhanced plastic strain of about 29.7% before failure in uniaxial compression test at room temperature. Studies of the serrations on the stress-strain curves and the shear bands on the fractured samples reveal that the amplitude of the stress drop of each serration step corresponds to the extent of the propagation of a single shear band through the materials. The composite exhibits more serration steps and smaller amplitude of stress drop due to the pinning of shear band propagation by ductile Nb particles.

Structure of Vortex Dislocations in a Wake-type Flow

Structure and dynamical processes of vortex dislocations in a kind of wake-type flow are described clearly by vortex lines, which are directly constructed from data of three-dimensional direct numerical simulations of the flow evolution.

A New Designed Two-Dimensional Bifurcation Parallel-Plate Flow Chamber

解决平行平板流槽每次实验只能观测壁面培养细胞受一种剪应力作用的问题。作者在平行平板流槽的基础上,首次提出了一种改进后的流槽--二维平板分叉流槽。通过数值模拟,给出了流体作定常流动时,流速和壁面剪应力的分布。结果发现,利用这种二维平板分叉流槽可以研究壁面培养的细胞在不同大小剪应力作用下的力学行为。该研究结果为流槽的合理设计和使用,并分析剪应力空间分布对内皮细胞的影响有重要实际意义。

强红外激光引起BCl_3分子可见荧光的脉冲光-声-光效应

用时间、空间分辨的方法研究了OAO荧光对时间、空间的依赖关系。观察到反应池几何形状对OAO荧光的显著影响。记录了CO_2脉冲激光激发BCl_3分子时形成的脉冲声波,及其与OAO荧光的对应关系。证实了OAO荧光是脉冲声波对BCl_3激发态分子的再激发。用简单的模型计算了OAO荧光的形成、轴向移动速度,结果与实验基本一致。

合成孔径激光成像雷达(Ⅱ):空间相位偏置发射望远镜

报道一种可以进行空间相位偏置的光学望远镜,用作合成孔径激光成像雷达中的光学发射天线。在望远镜内放置相位调制平板,控制望远镜的离焦量和位相调制平板的相位函数,能够在激光望远镜的照明区产生可控制的附加空间相位二次项,灵活改变激光照明波前,以在目标回波接收信号中产生雷达运动方向上的所需的二次项相位历程,因此能够实现特定的方位向成像分辨率。

MODIFIED ENGAGEMENT METHOD FOR MATRIX OPERATION

We describe a modified engagement method for matrix operation based on a two-dimensional crossed-ring interconnection network, Our method incorporates fewer steps than that reported by Bocker et al. [Appl. Opt. 22, 804 (1983)], and its performance is found to be the most efficient (minimum steps) in comparison with other systolic and/or engagement methods for matrix operation. Thus, it may be helpful for other optical and electronic implementations of matrix operations. One compact optoelectronic integrity approach for implementing the modified engagement method is briefly described. (C) 1995 Optical Society of America

High-efficiency reflective diffraction gratings in fused silica as (de)multiplexers at 1.55 mu m for dense wavelength division multiplexing application

We describe high-efficiency, high-dispersion reflection gratings fabricated in bulk fused Silica illuminated by incident lights in the C + L bands as (de)multiplexers for dense wavelength division multiplexing (DWDM) application. Based on the phenomenon of total internal reflection, gratings with optimized profile parameters exhibit diffraction efficiencies of more than 90% under TM- and TE-polarized incident lights for 101-nm spectral bandwidths (1520-1620 nm) and can reach an efficiency of greater than 97% for both polarizations at a wavelength of 1550 nm. Without loss of metal absorption, without coating of dielectric film layers, and independent of tooth shape, this new kind of grating should be of great interest for DWDM application. (C) 2005 Optical Society of America.

Experimental study of nonlinear switching characteristics of conventional 2×2 fused tapered couplers

The nonlinear switching characteristics of fused fiber directional couplers were studied experimentally. By using femtosecond laser pulses with pulse width of 100 fs and wavelength of about 1550 nm from a system of Ti:sapphire laser and optical parametric amplifier (OPA), the nonlinear switching properties of a null coupler and a 100% coupler were measured. The experimental results were coincident with the simulations based on nonlinear propagation equations in fiber by using super-mode theory. Nonlinear loss in fiber was also measured to get the injected power at the coupler. After deducting the nonlinear loss and input efficiency, the nonlinear switching critical peak powers for a 100% and a null fused couplers were calculated to be 9410 and 9440 W, respectively. The nonlinear loss parameter P_(N) in an expression of α_(NL)=αP/P_(N) was obtained to be P_(N)=0.23 W.