Resolution and noise in ghost imaging with classical thermal light

The resolution and classical noise in ghost imaging with a classical thermal light are investigated theoretically. For ghost imaging with a Gaussian Schell model source, the dependences of the resolution and noise on the spatial coherence of the source and the aperture in the imaging system are discussed and demonstrated by using numerical simulations. The results show that an incoherent source and a large aperture will lead to a good image quality and small noise.

Ghost imaging with thermal light by third-order correlation

Ghost imaging with classical incoherent light by third-order correlation is investigated. We discuss the similarities and the differences between ghost imaging by third-order correlation and by second-order correlation, and analyze the effect from each correlation part of the third-order correlation function on the imaging process. It is shown that the third-order correlated imaging includes richer correlated imaging effects than the second-order correlated one, while the imaging information originates mainly from the correlation of the intensity fluctuations between the test detector and each reference detector, as does ghost imaging by second-order correlation.

Cross spectral purity and its influence on ghost imaging experiments

Pseudo-thermal light has been widely used in ghost imaging experiments. In order to understand the differences between the pseudo-thermal source and thermal source, we propose a method to investigate whether a light source has cross spectral purity (CSP), and experimentally measure the cross spectral properties of the pseudo-thermal light source in near-field and far-field zones. Moreover we present a theoretical analysis of the cross spectral influence on ghost imaging. (c) 2006 Elsevier B.V. All rights reserved.

基于统计光学的无透镜鬼成像数值模拟与实验验证

作为量子信息领域分支的鬼成像,由于物体的像将出现在不包含物体的光路上的特点,使得这一领域的研究引人入胜。一度认为,只有基于纠缠态双光子的纠缠光源,才能实现鬼成像;但近年来的研究表明,经典热光场也能实现这一过程。从经典统计光学入手,建立了热光场的数值模型,模拟符合热光特性的光场变化、光场传播、以及物体透射函数对热光场的调制,进而从光强度起伏的关联函数中,分别重现振幅型物体和纯相位型物体的傅里叶变换图像;通过与真实实验结果的对比,表明基于统计光学原理的该数值模型所预测的实验结果,与真实的实验结果完全一致。

Synthesis, spectroscopic and thermal properties of nickel (II)-azo complexes with blue-violet light wavelength

A novel azo dye containing isoxazole ring and beta-diketone derivative (TIAD) and its two nickel (II) complexes (Ni (II)-ETIAD and Ni (II)-HTIAD) were synthesized in order to obtain a blue-violet light absorption and better thermal stability as a promising organic storage material for next generation of high density digital versatile disc-recordable (HD-DVD-R) systems that uses a high numerical aperture of 0.85 at 405 nm wavelength. Their structures were confirmed on the basis of elemental analysis, MS, FT-IR, UV-Vis and magnetic data. Their solubility in 2,2,3,3-tetrafluoro-1-propanol (TFP) and absorption properties of thin film were measured. The difference of absorption maximum from the complexes to their ligands was discussed. In addition, the TG analysis of the complexes was also determined, and their thermal stability was evaluated. (C) 2004 Elsevier Ltd. All rights reserved.

Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process

The first demonstration, to our knowledge, of the creation of ultrabroadband superluminescent light-emitting diodes using multiple quantum-dot layer structure by rapid thermal-annealing process is reported. The device exhibits a 3 dB emission bandwidth of 146 nm centered at 984 mm with cw output power as high as 15 mW at room temperature corresponding to an extremely small coherence length of 6.6 mu m. (C) 2008 Optical Society of America.

Effect of rapid thermal annealing and hydrogen plasma treatment on the microstructure and light-emission of silicon-rich oxide film

Silicon-rich silicon oxide (SRSO) films are prepared by plasma-enhanced chemical vapor deposition method at the substrate temperature of 200degreesC. The effect of rapid thermal annealing and hydrogen plasma treatment on tire microstructure and light-emission of SRSO films are investigated in detail using micro-Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy and photoluminescence (PL) spectra. It is found that the phase-separation degree of the films decreases with increasing annealing temperature from 300 to 600degreesC, while it increases with increasing annealing temperature from 600 to 900degreesC. The light-emission of the films are enhanced with increasing annealing temperature up to 500degreesC, while it is rapidly reduced when the annealing temperature exceeds 600degreesC. The peak position of the PL spectrum blueshifts by annealing at the temperature of 300degreesC, then it red-shifts with further raising annealing temperature. The following hydrogen plasma treatment results in a disproportionate increase of the PL intensity and a blueshift or redshift of the peak positions, depending on the pristine annealing temperature. It is thought that the size of amorphous silicon clusters, surface structure of the clusters and the distribution of hydrogen in the films can be changed during the annealing procedure. The results indicate that not only cluster size but also surface state of the clusters plays an important role in the determination of electronic structure of the amorphous silicon cluster and recombination process of light-generated carriers.

Light induced rapid thermal diffusion of boron atom in silicon

国家自然科学基金

Enhancing the Performance of the Organic Light-emitting Device (OLED) by Thermal Treatment

A comparative study on the annealing of the ITO substrates and the organic layers were conducted on Organic light-emitting device (OLED). We fabricated four devices with the structure of Al/Alq(3)/TPD: PVK/NiO/ITO/Glass, and investigated the effect of heat on device performance by selectively annealing. When the TPD: PVK layers were annealed at 90 degrees C with 30 min annealing time and the ITO substrates were annealed at 300 degrees C with a constant annealing time (100 min). We find the OLED shows obvious performance improvement in brightness and current efficiency, which is attributable to the fact that annealing reduces defects and improves the interface structures of the organics and the organic/ITO interfaces. On the other hand, an appropriate annealing would slow the transportation of the hole, thus finally leads to more balanced electron and hole.

Experimental Observation on Surface Wave Phenomena in Thermal Capillary Convection

An optical diagnostic system consisting of the Michelson interferometer with the image processor has been developed for studying of the surface wave in the thermal capillary convection in a rectangular cavity. In this paper, the capillary convection, surface deformation and surface wave due to the different temperature between the two sidewalls have been investigated. The cavity is 52mm?42mm in horizontal cross section and 4mm in height. The temperature difference is increased gradually and flow in liquid layer will change from steady convection to unstable convection. The optical interference method measures the surface deformation and the surface wave of the convection. The deformation of the interference fringes, which produced by the meeting of the reflected light from the liquid surface and the reference light has been captured, and the surface deformation appears when the steady convection is developed. The surface deformation is enhanced with the increasing of the temperature difference, and then several knaggy peeks in the interference fringes appear and move from the heated side to the cooled side, it demonstrates that the surface wave is existed. The surface deformation, the wavelength, the frequency, and the wave amplitude of the surface wave have been calculated.

Optical near-field simulation of Sb thin film thermal lens and its application in optical recording

Using the finite-difference-time-domain method, the near-field optical distribution and properties of Sb thin film thermal lens are calculated and simulated. The results show as follows. Within the near-field distance to the output plane of thermal lens, the spot size is approximately 100 nm, and its intensity is greatly enhanced, which is higher than that of incident light. The spot shape gradually changes from ellipse to round at the distance of more than 12 nm to the output plane. The above-simulated results are further demonstrated by the static optical recording experiment. (C) 2005 American Institute of Physics.