Theoretical studies of nonlinear optical properties of compounds K(4)Ln(2)(CO3)(3)F-4 (Ln=Pr, Nd, Sm, Eu, Gd)

K(4)Ln(2)(CO3)(3)F-4 (Ln=Pr, Nd, Sm, Eu, Gd) is a special type of frequency doubling compound, whose crystal structure exhibits a scarcity of fluorine ions. This leads to two different coordination polyhedrons in the general position of K(2) atoms: [K(2)O6F(1)(2)F(2)] and [K(21)O6F(1)(2)] in a 2/1 ratio. The chemical bonding structures of all constituent atoms of the compound K4Gd2(CO3)(3)F-4 (KGCOF) are comprehensively studied; moreover, the relationship between the chemical bonding structure and the nonlinear optical (NLO) properties is investigated from the chemical bond viewpoint. The theoretical prediction of the NLO tensor coefficient d(11) of KGCOF is in agreement with experimental observation. Theoretical analyses show that the nonlinearity of this crystal type mainly originates from K-O bonds. In addition, the correlation between the NLO tensor d(11) and the refractive index n(0) of KGCOF is discussed. (C) 2000 American Institute of Physics. [S0021-8979(00)07506-X].

Monte-Carlo simulation of surface crack growth rate for offshore structural steel E36-Z35

The Monte- Carlo method is used to simulate the surface fatigue crack growth rate for offshore structural steel E36-Z35, and to determine the distributions and relevance of the parameters in the Paris equation. By this method, the time and cost of fatigue crack propagation testing can be reduced. The application of the method is demonstrated by use of four sets of fatigue crack propagation data for offshore structural steel E36-Z35. A comparison of the test data with the theoretical prediction for surface crack growth rate shows the application of the simulation method to the fatigue crack propagation tests is successful.

Strain Regularity and Stiffness Tensor of Reinforcers in Dense Particle Reinforced Composites

针对高体积份数、随机分布、等轴状颗粒增强复合材料 ,研究了材料的应变分布规律 ,给出了基体和增强体应变平均值与材料微观结构参数之间的定量关系。结果表明 ,除应变平均值外 ,应变涨落是影响刚度张量的另一个重要因素 ,研究了应变涨落与材料微观结构参数之间的关系 ,并推导出了复合材料的刚度张量。与实验结果和以往的理论比较 ,预测结果与实验结果吻合良好

Three-dimensional instability of an oscillating viscous flow past a circular cylinder

A systematically numerical study of the sinusoidally oscillating viscous flow around a circular cylinder was performed to investigate vortical instability by solving the three-dimensional incompressible Navier-Stokes equations. The transition from two- to three-dimensional flow structures along the axial direction due to the vortical instability appears, and the three-dimensional structures lie alternatively on the two sides of the cylinder. Numerical study has been taken for the Keulegan-Carpenter( KC) numbers from 1 to 3.2 and frequency parameters from 100 to 600. The force behaviors are also studied by solving the Morison equation. Calculated results agree well with experimental data and theoretical prediction.

A probabilistic model for fatigue crack propagation analysis

A simple probabilistic model for predicting crack growth behavior under random loading is presented. In the model, the parameters c and m in the Paris-Erdogan Equation are taken as random variables, and their stochastic characteristic values are obtained through fatigue crack propagation tests on an offshore structural steel under constant amplitude loading. Furthermore, by using the Monte Carlo simulation technique, the fatigue crack propagation life to reach a given crack length is predicted. The tests are conducted to verify the applicability of the theoretical prediction of the fatigue crack propagation.

Nonlinear Constitutive Behavior Of Ferroelectric Materials

The ferroelectric specimen is considered as an aggregation of many randomly oriented domains. According to this mechanism, a multi-domain mechanical model is developed in this paper. Each domain is represented by one element. The applied stress and electric field are taken to be the stress and electric field in the formula of the driving force of domain switching for each element in the specimen. It means that the macroscopic switching criterion is used for calculating the volume fraction of domain switching for each element. By using the hardening relation between the driving force of domain switching and the volume fraction of domain switching calibrated, the volume fraction of domain switching for each element is calculated. Substituting the stress and electric field and the volume fraction of domain switching into the constitutive equation of ferroelectric material, one can easily get the strain and electric displacement for each element. The macroscopic behavior of the ferroelectric specimen is then directly calculated by volume averaging. Meanwhile, the nonlinear finite element analysis for the ferroelectric specimen is carried out. In the finite element simulation, the volume fraction of domain switching for each element is calculated by using the same method mentioned above. The interaction between different elements is taken into account in the finite element simulation and the local stress and electric field for each element is obtained. The macroscopic behavior of the specimen is then calculated by volume averaging. The computation results involve the electric butterfly shaped curves of axial strain versus the axial electric field and the hysteresis loops of electric displacement versus the electric field for ferroelectric specimens under the uniaxial coupled stress and electric field loading. The present theoretical prediction agrees reasonably with the experimental results.

Experimental Investigation Of Influence Of Interfacial Tension On Convection Of Two-Layer Immiscible Liquid

Benard-Marangoni convections of two-layer fluids heated from the bottom are investigated experimentally with a particle imagine velocimetry. The flows are visualized from the side, and various velocity fields near the onset of convection, such as three-layer vortex convective patterns, are observed when the depth ratio varies in a wide range. A new classification of the convective patterns is proposed with more detail than in previous studies. The analysis of the results indicates that the interface tension greatly influences the motion intensities of the bottom and top layers. The dimensionless wave number increases with the Bond number when the motion in the top layer is not more intense than that in the bottom layer, which agrees with the theoretical prediction.

Atomistic Simulation On Size-Dependent Yield Strength And Defects Evolution Of Metal Nanowires

A simple derivation based on continuum mechanics is given, which shows the surface stress is critical for yield strength at ultra-small scales. Molecular dynamics (MD) simulations with modified embedded atom method (MEAM) are employed to investigate the mechanical behaviors of single-crystalline metal nanowires under tensile loading. The calculated yield strengths increasing with the decrease of the cross-sectional area of the nanowires are in accordance with the theoretical prediction. Reorientation induced by stacking faults is observed at the nanowire edge. In addition. the mechanism of yielding is discussed in details based on the snapshots of defects evolution. The nanowires in different crystallographic orientations behave differently in stretching deformation. This study on the plastic properties of metal nanowires will be helpful to further understanding of the mechanical properties of nanomaterials. (C) 2009 Elsevier B.V. All rights reserved.

The near wall velocity measurements in microchannels with different diameter particles by microPIV/PTV. 8th International symposium on PIV

In near wall measurements with microPIV/PTV, whether seeding particles can be effectively used to detect local fluid velocity is a crucial problem. This talk presents our recent measurements in microchannels [1][2]. Based on measured velocity profiles with 200nm and 50nm in pure water, we found that the measured velocity profiles are agreed with the theoretical values in the middle of channel, but large deviations between measured data and theoretical prediction appear close to wall (0.25mm

Study on the interaction of intense femtosecond laser pulses with nanometre-sized hydrogen clusters

The interaction of intense femtosecond laser pulses with hydrogen clusters has been experimentally studied. The hydrogen clusters were produced from expansion of high-pressure hydrogen gas (backed up to 8x10(6)Pa) into vacuum through a conical nozzle cryogenically cooled by liquid nitrogen. The average size of hydrogen clusters was estimated by Rayleigh scattering measurement and the maximum proton energy of up to 4.2keV has been obtained from the Coulomb explosion of hydrogen clusters under 2 x 10(16)W/cm(2) laser irradiation. Dependence of the maximum proton energy on cluster size and laser intensity was investigated, indicating the correlation between the laser intensity and the cluster size. The maximum proton energy is found to be directly proportional to the laser intensity, which is consistent with the theoretical prediction.

Ta2O5／SiO2硬膜双腔滤光片激光损伤特性研究

研究了Ta2O5／SiO2硬膜双腔干涉滤光片带内、带边及带外的吸收和激光损伤特性。实验发现，对于作用激光，带通滤光片的驻波场分布、吸收率和损伤阈值在带内、带边和带外的响应特性对作用激光波长均呈现出明显的选择性。根据实验结果，结合滤光片的驻波场分析，给出了带通滤光片的损伤机理。

Field emission enhancement by the quantum structure in an ultrathin multilayer planar cold cathode

Field electron emission (FE) from an ultrathin multilayer planar cold cathode (UMPC) including a quantum well structure has been both experimentally and theoretically investigated. We found that by tuning the energy levels of UMPC, the FE characteristic can be evidently improved, which is unexplained by conventional FE mechanism. FE emission mechanism, dependent on the quantum structure effect, which supplies a favorable location of electron emission and enhances tunneling ability, has been presented to expound the notable amelioration. An approximate formula, brought forward, can predict the quantum FE enhancement, in which the theoretical prediction is close to the experimental result. (C) 2008 American Institute of Physics.

Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry

The well-width dependence of in-plane optical anisotropy (IPOA) in (001) GaAs/AlxGa1-xAs quantum wells induced by in-plane uniaxial strain and interface asymmetry has been studied comprehensively. Theoretical calculations show that the IPOA induced by in-plane uniaxial strain and interface asymmetry exhibits much different well-width dependence. The strain-induced IPOA is inversely proportional to the energy spacing between heavy- and light-hole subbands, so it increases with the well width. However, the interface-related IPOA is mainly determined by the probability that the heavy- and light-holes appear at the interfaces, so it decreases with the well width. Reflectance difference spectroscopy has been carried out to measure the IPOA of (001) GaAs/AlxGa1-xAs quantum wells with different well widths. Strain- and interface-induced IPOA have been distinguished by using a stress apparatus, and good agreement with the theoretical prediction is obtained. The anisotropic interface potential parameters are also determined. In addition, the energy shift between the interface- and strain-induced 1H1E reflectance difference (RD) structures, and the deviation of the 1L1E RD signal away from the prediction of the calculation model have been discussed.

Hole Spin Relaxation in an Ultrathin InAs Monolayer

We investigate the spin relaxation time of holes in an ultrathin neutral InAs monolayer (1.5 ML) and compare with that of electrons, using polarization-dependent time-resolved photoluminescence (TRPL) experiments. With excitation energies above the GaAs gap, we observe a rather slow relaxation of holes (tau(1h) = 196 +/- 17 ps) that is in the magnitude similar to electrons (tau(1e) = 354 +/- 32 ps) in this ultrathin sample. The results are in good agreement with earlier theoretical prediction, and the phonon scattering due to spin-orbit coupling is realized to play a dominant role in the carrier spin kinetics.

Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate

We report a room temperature study of the direct band gap photoluminescence of tensile-strained Ge/Si0.13Ge0.87 multiple quantum wells grown on Si-based germanium virtual substrates by ultrahigh vacuum chemical vapor deposition. Blueshifts of the luminescence peak energy from the Ge quantum wells in comparison with the Ge virtual substrate are in good agreement with the theoretical prediction when we attribute the luminescence from the quantum well to the c Gamma 1-HH1 direct band transition. The reduction in direct band gap in the tensile strained Ge epilayer and the quantum confinement effect in the Ge/Si0.13Ge0.87 quantum wells are directly demonstrated by room temperature photoluminescence.