A Numerical Study of Indentation Using Indenters of Different Geometry

Finite element simulation of the Berkovich, Vickers, Knoop, and cone indenters was carried out for the indentation of elastic-plastic material. To fix the semiapex angle of the cone, several rules of equivalence were used and examined. Despite the asymmetry and differences in the stress and strain fields, it was established that for the Berkovich and Vickers indenters, the load-displacement relation can closely be simulated by a single cone indenter having a semiapex angle equal to 70.3degrees in accordance with the rule of the volume equivalence. On the other hand, none of the rules is applicable to the Knoop indenter owing to its great asymmetry. The finite element method developed here is also applicable to layered or gradient materials with slight modifications.

Effect Of Load Triaxiality On Polymorphic Transitions In Zinc Oxide

Molecular dynamics (MD) simulations and first-principles calculations are carried out to analyze the stability of both newly discovered and previously known phases of ZnO under loading of various triaxialities. The analysis focuses on a graphite-like phase (FIX) and a body-centered-tetragonal phase (BCT-4) that were observed recently in [0 1 (1) over bar 0]- and [0 0 0 1]-oriented nanowires respectively under uniaxial tensile loading as well as the natural state of wurtzite (WZ) and the rocksalt (RS) phase which exists under hydrostatic pressure loading. Equilibrium critical stresses for the transformations are obtained. The WZ -> HX transformation is found to be energetically favorable above a critical tensile stress of 10 GPa in [0 1 (1) over tilde 0] nanowires. The BCT-4 phase can be stabilized at tensile stresses above 7 GPa in [0 0 0 1] nanowires. The RS phase is stable at hydrostatic pressures above 8.2 GPa. The identification and characterization of these phase transformations reveal a more extensive polymorphism of ZnO than previously known. A crystalline structure-load triaxiality map is developed to summarize the new understanding. (c) 2007 Elsevier Ltd. All rights reserved.

Nonvolatile holograms in LiNbO3 : Fe : Cu by use of the bleaching effect

We report our observation of a bleaching effect under an ultraviolet exposure in LiNbO3:Fe:Cu crystals. Two three-step recording-transferring-fixing schemes are proposed to record nonvolatile photorefractive holograms in such crystals. In the schemes two red laser beams and an ultraviolet illumination are used selectively to write the charge grating in the shallow-level Fe centers, to develop the charge grating in the deep-level Cu centers by transferring the charge grating in the Fe centers, and to fix only the charge grating in the Cu centers for unerasable read-out. Experimental results, verifications, and an optimal recording scheme are given. A comparison of the lithium niobate crystals of the same double-doping system of Fe:Mn, Ce:Mn, Ce:Cu, and Fe:Cu is outlined. (C) 2002 Optical Society of America.

Cloning and characterization of a blood coagulation factor IX-binding protein from the venom of Trimeresurus stejnegeri

A blood coagulation factor IX-binding protein (TSV-FIX-BP) was isolated from the snake venom of Trimeresurus stejnegeri. On SDS-polyacrylamide gel electrophoresis, TSV-FIX-BP showed a single band with an apparent molecular weight of 23,000 under non-reducing conditions. and two distinct bands with apparent molecular weights of 14,800 and 14,000 under reducing conditions. cDNA clones containing the coding sequences of TSV-FIX-BP were isolated and sequenced to determine the structure of the precusors of TSV-FIX-BP subunits. The deduced amino acid sequences of two subunits of TSV-FIX-BP were confirmed by N-terminal protein sequencing and trypsin-digested peptide mass fingerprinting. TSV-FIX-BP was a nonenzymatic C-type lectin-like anti-coagulant. The anti-coagulant activity of TSV-FIX-BP was mainly caused by its dose dependent interaction with blood coagulation factor IX but not with blood coagulation factor X. (C) 2003 Elsevier Science Ltd. All rights reserved.

新型渗透变形仪的研制

针对现有渗透变形仪存在的密封止水效果差、试样固定装置影响过流面积、仪器复杂等缺陷,通过对岩土渗透变形特性及测试原理进行分析,研制出一种适用于黏性土、水泥土类的新型渗透变形仪,该仪器设计方法独特,在试样外套橡皮膜并加围压的柔性密封止水,以及在试样顶部采用圆环型透水石固定试样等方法,既能测定岩土体的渗透系数又能测定渗透变形特性,同时,既保证试样的渗流面积不受影响又允许试样产生渗透变形,而且在渗透水压力作用下试样周围的密封性良好。实际工程应用结果表明,该仪器测定的岩土体的渗透系数及抗渗比降具有很高的可靠性和精度。

烙铁头蛇毒C-型凝集素样蛋白的生物活性及其作用机制研究

蛇毒C一型凝集素样蛋白一般是由两个相似亚基组成的异构二聚体或由多个异构二聚体组成的多聚体。烙铁头蛇毒血小板活化素TMVA是一个高分子量的C一型凝集素样蛋白。本文研究了烙铁头蛇毒C一型凝聚素样蛋白的生物活性及其作用机制。同时还从烙铁头蛇毒中分离到一个抗凝蛋白（mucroqucetin）。TMVA呈量效关系地诱导P好和洗涤血小板聚集，提示其活化血小板并不调节v从下或不依赖于vWF。抗人血小板糖蛋白（GP）Ib单克隆抗体HIPI呈剂量依赖性特异性抑制TMVA诱导的血小板聚集。抗人GPllb单克隆抗体PZ也抑制血小板聚集。单克隆抗体和流式细胞术分析显示，FITC一TMVA特异性地、剂量依赖性地结合到福尔马林固定的人血小板上，在FIIC-TMVA4O砚浓度时达到饱和性结合状态，这种结合被HIPI特异性地抑制，并呈剂量依赖性。TMVA不结合血小板GPIX、GPllb、GPllla、GPIa、GPlla和GPIV。Mocarhagin仅能部分阻断TMVA诱导的血小板聚集，然而TMVA却能诱导mocarhagin阻断的血小板聚集。以上结果显示TMVA在GPIbQ上的主要受体位于富含亮氨酸第二次重复区氨基酸残基59一81，除此之外，TMVA可能还有其他结合位点。小鼠体内首次给予TMVA后，在短时间内（15min-30min）引起循环血小板数及网织血小板百分率暂时性减低、血小板膜表面P-seleetin的表达暂时性增加，但循环血液中血小板一白细胞复合物未增加；抗鼠血小板单克隆抗体P一selectin、GPllb、GPlll。免疫组化染色显示脾和肺的组织巨噬细胞呈阴性反应，提示TMVA导致循环血小板减少不是巨噬细胞系统对血小板的清除所致。可能是由于TMVA．通过GPIb活化血小板后使P-selectin暴露于胞浆膜表面，这些脱颗粒的血小板在补体的参与下自身溶破，而导致快速的暂时性血小板减少。给予TMVA．后组织病理学显示，肝、脾、肺、肾、胰、大肠及小肠血管未血栓形成；TMVA不影响内源性和外源性凝血系统；TMVA呈剂量依赖性延长小鼠的出血时间，但在TMvA25p眺g时小鼠的出血时间未延长、仍小于5分钟，是一个安全的剂量。以上结果充分证明TMVA具有体内抗血栓作用，血小板自身溶破导致血小板减少在体内抗血栓中可能也起到重要的作用。体内外实验显示TMVA在动物体内外都具有抗补体活性作用。TMVA上调血小板上DAF和CD59的表达，不同程度地上调白细胞上D胚和CDS夕的表达。TMVA在补体系统中的作用可能与其在异种器宫移植中抗IIAR的发生相关。Mucroqucetin是一个由Q链和p链组成的异二聚体蛋白质，其分子量为25KD。。N一末端氨基酸序列与其它该类蛇毒C一型凝集素样蛋白有很高的同源性。Mucroqucetin呈量效关系延长部分凝血活酶时间（APTT），几乎不影响凝血酶原时间（PT）。因子IX和X的抑制试验显示，该纯化蛋白呈量效关系抑制工X因子的凝血活性，不影响X因子，提示mucroqucetin的抗凝活性主要通过结合FIX而实现，是一个血液凝固IX因子结合蛋白。

Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate

We analyze low-temperature Raman and photoluminescence spectra of MBE-grown GaN layers on sapphire. Strong and sharp Raman peaks are observed in the low frequency region. These peaks, which are enhanced by excitation in resonance with yellow luminescence transitions, are attributed to electronic transitions related to shallow donor levels in hexagonal GaN. It is proposed that a low frequency Raman peak at 11.7 meV is caused by a pseudo-local vibration mode related to defects involved in yellow luminescence transitions. The dependence of the photoluminescence spectra on temperature gives additional information about the residual impurities in these GaN layers.

Observation of defects in GaN epilayers

GaN epilayers grown on sapphire substrates nitridated for various lengthy periods were investigated by light scattering tomography (LST) and Raman scattering. In the LST images of the plane-view epilayers, the light scattering defects distribute in [<11(2)over bar 0>] directions. The defect density is lower in epilayer grown on substrate nitridated for a longer period. The defects are believed to be straight threading edge dislocations on {<1(1)over bar 00>} planes. The Raman shift of E-2 mode is larger in the sample grown on substrate nitridated for a longer period. Our results show that the stress is higher in the sample with fewer dislocations.

Characterization of GaSb substrate wafers for MOCVD III-V antimonides

The qualities of GaSb substrates commonly used for the preparation of III-V antimonide epilayers were studied before and after growing GaInAsSb multi-layers by MOCVD using PL, FTIR and DCXD together with the electrical properties and EPD value. The correlation between the substrate qualities and epilayer properties was briefly discussed. The good property epilayers of GaInAsSb and, then, the high preformance of 2.3 um photodetectors were achieved only using the good quality GaSb wafers as the substrates.

Heteroepitaxy of cubic GaN: influence of interface structure

We report on the epitaxial growth and the microstructure of cubic GaN. The layers are deposited by plasma-assisted molecular beam epitaxy on GaAs and Si substrates. Despite the extreme lattice mismatch between these materials, GaN grows in the metastable cubic phase with a well-defined orientation-relationship to the GaAs substrate including a sharp heteroboundary. The preference of the metastable phase and its epitaxial orientation originates in the interface structure which is found to be governed by a coincidence site lattice.